EGF1D Equivalent & Substitute Parts

Part Overview

The EGF1D is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is classified as Not For New Designs, indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within the 200 V / 1 A rectifier category.

Substiute Parts

EGF1D
onsemiIn Stock: 300362EGF1D Datasheet
EGF1D
Current Part
ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
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RS1D
Taiwan Semiconductor CorporationIn Stock: 20226RS1D Datasheet
RS1D
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S1D
YAGEOIn Stock: 6087S1D Datasheet
S1D
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CGRA4003-G
Comchip TechnologyIn Stock: 989CGRA4003-G Datasheet
CGRA4003-G
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CMR1-02M BK PBFREE
Central Semiconductor CorpIn Stock: 864CMR1-02M BK PBFREE Datasheet
CMR1-02M BK PBFREE
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CMR1-02M TR13 PBFREE
Central Semiconductor CorpIn Stock: 54016CMR1-02M TR13 PBFREE Datasheet
CMR1-02M TR13 PBFREE
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CURA103-G
Comchip TechnologyIn Stock: 28976CURA103-G Datasheet
CURA103-G
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ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
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ES1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 3252ES1D-M3/61T Datasheet
ES1D-M3/61T
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FS1DE-TP
Micro Commercial CoIn Stock: 918FS1DE-TP Datasheet
FS1DE-TP
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GF1D-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 9688GF1D-E3/67A Datasheet
GF1D-E3/67A
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GF1D/1754
Vishay General Semiconductor - Diodes DivisionIn Stock: 1026GF1D/1754 Datasheet
GF1D/1754
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MURS1D-TP
Micro Commercial CoIn Stock: 1050MURS1D-TP Datasheet
MURS1D-TP
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RGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15215RGF1D-E3/5CA Datasheet
RGF1D-E3/5CA
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RS1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1137RS1D-M3/5AT Datasheet
RS1D-M3/5AT
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RS1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1450RS1D-M3/61T Datasheet
RS1D-M3/61T
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RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
RS1DHE3_A/H
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RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
RS1DHE3_A/I
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S1D-13-F
Diodes IncorporatedIn Stock: 300326S1D-13-F Datasheet
S1D-13-F
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STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
STTH102A
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STTH102AY
STMicroelectronicsIn Stock: 31268STTH102AY Datasheet
STTH102AY
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STTH1R02A
STMicroelectronicsIn Stock: 1738STTH1R02A Datasheet
STTH1R02A
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STTH2R02A
STMicroelectronicsIn Stock: 116772STTH2R02A Datasheet
STTH2R02A
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U1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14293U1D-M3/5AT Datasheet
U1D-M3/5AT
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U1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188U1D-M3/61T Datasheet
U1D-M3/61T
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US1D-13-F
Diodes IncorporatedIn Stock: 155307US1D-13-F Datasheet
US1D-13-F
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US1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 83907US1D-E3/61T Datasheet
US1D-E3/61T
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CMR1U-02M TR13 PBFREE
Central Semiconductor CorpIn Stock: 65217CMR1U-02M TR13 PBFREE Datasheet
CMR1U-02M TR13 PBFREE
Parametric Equivalent
US1D-TP
Micro Commercial CoIn Stock: 3497US1D-TP Datasheet
US1D-TP
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -65 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the EGF1D is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA (surface mount)
  • Mounting Type: Surface Mount

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: ≤ 1.3 V @ 1 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): ≤ 150 ns
  • Current - Reverse Leakage @ Vr: ≤ 10 µA @ 200 V
  • Operating Temperature - Junction: Minimum -55°C, Maximum ≥ 150°C
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Parts meeting all primary criteria and the majority of secondary criteria are classified as direct substitutes. Parts with deviations in secondary parameters remain functionally compatible within the 200 V / 1 A rectifier application space.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] trr [ns] Ir @ Vr [µA @ V] Package Tj (Min~Max) [°C] Product Status
EGF1D onsemi 200 1 1 @ 1 50 10 @ 200 DO-214AC (SMA) -65 ~ 175 Not For New Designs
ES1D EVVO Semi 200 1 1 @ 1 35 5 @ 200 DO-214AC (SMA) -55 ~ 150 Active
RS1D Taiwan Semiconductor Corporation 200 1 1.3 @ 1 150 5 @ 200 DO-214AC (SMA) -55 ~ 150 Active
S1D YAGEO 200 1 1.1 @ 1 DO-214AC (SMA) Active
CGRA4003-G Comchip Technology 200 1 1.1 @ 1 5 @ 200 DO-214AC (SMA) -55 ~ 150 Active
CMR1-02M BK PBFREE Central Semiconductor Corp 200 1 1.1 @ 1 5 @ 200 DO-214AC (SMA) -65 ~ 150 Active
CMR1-02M TR13 PBFREE Central Semiconductor Corp 200 1 1.1 @ 1 5 @ 200 DO-214AC (SMA) -65 ~ 150 Active
CURA103-G Comchip Technology 200 1 1 @ 1 50 5 @ 200 DO-214AC (SMA) Active
ES1D-13-F Diodes Incorporated 200 1 0.92 @ 1 25 5 @ 200 DO-214AC (SMA) -55 ~ 150 Active
ES1D-M3/61T Vishay General Semiconductor - Diodes Division 200 1 0.92 @ 1 25 5 @ 200 DO-214AC (SMA) -55 ~ 150 Active
FS1DE-TP Micro Commercial Co 200 1 1.3 @ 1 150 5 @ 200 DO-214AC (SMA) -50 ~ 150 Obsolete

Engineering Selection Recommendations

Active Status Substitutes (Recommended for New Applications):

Parts with Active product status are suitable for new designs and ongoing production. ES1D-13-F and ES1D-M3/61T, both manufactured by established semiconductor suppliers (Diodes Incorporated and Vishay), offer the lowest forward voltage drop (0.92 V @ 1 A) and fastest reverse recovery time (25 ns), providing superior switching performance. CURA103-G from Comchip Technology matches the EGF1D's forward voltage (1 V @ 1 A) and reverse recovery time (50 ns) while maintaining Active status.

Compliance and Certification:

All substitute parts listed carry ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited), matching the EGF1D's environmental and regulatory qualifications. Central Semiconductor's CMR1-02M variants (both BK PBFREE and TR13 PBFREE) extend the lower operating temperature to -65°C, matching the EGF1D's minimum junction temperature specification.

Obsolete Status Consideration:

FS1DE-TP from Micro Commercial Co is classified as Obsolete and should not be selected for new designs or long-term supply requirements.

Not For New Designs Status:

The EGF1D itself is marked Not For New Designs. Active alternatives should be prioritized for new circuit implementations.

Frequently Asked Questions (FAQ)

Q: Can I directly replace EGF1D with any of the listed substitute parts?

A: Direct replacement is possible for parts meeting all primary substitution criteria: 200 V reverse voltage, 1 A average rectified current, and DO-214AC (SMA) surface mount package. All listed substitutes meet these requirements. Secondary parameter variations (forward voltage, reverse recovery time, leakage current) may affect circuit performance but do not prevent functional substitution in standard rectifier applications.

Q: What is the difference between Fast Recovery and Standard Recovery speed classifications?

A: The EGF1D is classified as Fast Recovery (≤ 500ns, > 200mA). Most substitutes maintain this classification. CMR1-02M variants use Standard Recovery (> 500ns, > 200mA), which may introduce higher switching losses in high-frequency applications but remains compatible with general-purpose rectification.

Q: Why do some substitute parts have lower reverse leakage current (5 µA vs. 10 µA)?

A: Lower reverse leakage current indicates improved diode quality and reduced power dissipation in reverse bias conditions. This is a performance enhancement and does not prevent substitution. Parts with 5 µA leakage are functionally superior to the EGF1D's 10 µA specification.

Q: Are there packaging differences between substitute parts?

A: All substitute parts use the DO-214AC (SMA) surface mount package, ensuring mechanical and electrical compatibility with EGF1D footprints. Packaging format variations (Cut Tape, Tape & Reel, Bulk) affect supply and handling but not circuit performance.

Q: Which substitute offers the best performance match to EGF1D?

A: CURA103-G from Comchip Technology provides the closest electrical match: 1 V forward voltage @ 1 A and 50 ns reverse recovery time, identical to EGF1D specifications. ES1D-13-F and ES1D-M3/61T offer superior performance with lower forward voltage (0.92 V) and faster recovery (25 ns).

Q: Can I use FS1DE-TP as a substitute?

A: FS1DE-TP is classified as Obsolete and should not be selected for new designs or applications requiring long-term supply continuity. Active alternatives are recommended.

Q: What is the operating temperature range consideration for substitution?

A: The EGF1D operates from -65°C to 175°C. Most substitutes operate from -55°C to 150°C, representing a narrower range. For applications requiring the full -65°C to 175°C range, CMR1-02M variants (-65°C to 150°C) provide the closest lower temperature match, though the upper limit remains 150°C.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status, matching the EGF1D's environmental compliance requirement.

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