DZT658-13 Equivalent & Substitute Parts

Part Overview

The DZT658-13 is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the SOT-223-3 package. This device operates at 400 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 1 W power dissipation capability. The DZT658-13 is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and continued availability.

Key Parameters

Parameter	DZT658-13 Specification
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V
Current - Collector (Ic) (Max)	500 mA
Power - Max	1 W
Frequency - Transition	50 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3
Product Status	Obsolete
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the DZT658-13 are selected based on electrical parameter compatibility within the following critical criteria:

Mandatory Matching Parameters:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 400 V minimum
Package / Case: TO-261-4, TO-261AA (SOT-223 family)
Mounting Type: Surface Mount
Operating Temperature Range: Minimum -55°C ~ 150°C (TJ)
RoHS Status: ROHS3 Compliant

Allowable Parameter Variations:

Current - Collector (Ic) (Max): Equal to or greater than 500 mA
Power - Max: Equal to or greater than 1 W
Frequency - Transition: Equal to or greater than 50 MHz
DC Current Gain (hFE): Minimum specification of 40 or greater at comparable operating points
Vce Saturation: Equal to or lower saturation voltage values
Current - Collector Cutoff (Max): Equal to or lower leakage current values

Substitute parts meeting these criteria provide direct functional replacement capability while maintaining or exceeding the electrical performance envelope of the DZT658-13.

Parameter Comparison

Parameter	DZT658-13	FZT658TA	PBHV8140Z,115	PBHV8540Z,115	PZTA44,115
Manufacturer	Diodes Incorporated	Diodes Incorporated	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Obsolete	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V	400 V	400 V
Current - Collector (Ic) (Max)	500 mA	500 mA	1 A	500 mA	300 mA
Power - Max	1 W	2 W	1.45 W	1.4 W	1.35 W
Frequency - Transition	50 MHz	50 MHz	25 MHz	30 MHz	20 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 10V	40 @ 200mA, 10V	35 @ 500mA, 10V	10 @ 300mA, 10V	50 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 100mA	500mV @ 10mA, 100mA	250mV @ 200mA, 1A	250mV @ 60mA, 300mA	750mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA	100nA	100nA (ICBO)
Operating Temperature Range	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223	SOT-223	SOT-223
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Grade	Standard	Standard	Automotive	Automotive	Automotive
Qualification	None specified	None specified	AEC-Q100	AEC-Q100	AEC-Q101

Engineering Selection Recommendations

FZT658TA (Diodes Incorporated)

The FZT658TA is the direct equivalent substitute from the same manufacturer. This part maintains identical electrical specifications to the DZT658-13 across all critical parameters including 400 V breakdown voltage, 500 mA maximum collector current, 50 MHz transition frequency, and matching DC current gain characteristics. The FZT658TA offers enhanced power dissipation capability at 2 W compared to the 1 W rating of the DZT658-13. Product status is active with substantial inventory availability. This substitute provides the highest degree of functional compatibility and is suitable for direct replacement in existing designs.

PBHV8140Z,115 (Nexperia USA Inc.)

The PBHV8140Z,115 is an automotive-grade NPN transistor with AEC-Q100 qualification. This part exceeds the DZT658-13 specifications in collector current capacity (1 A versus 500 mA) and power dissipation (1.45 W versus 1 W). The 400 V breakdown voltage and SOT-223 package compatibility are maintained. Transition frequency is reduced to 25 MHz from the original 50 MHz specification. This substitute is appropriate for applications requiring automotive-grade qualification and higher current handling capability.

PBHV8540Z,115 (Nexperia USA Inc.)

The PBHV8540Z,115 is an automotive-grade NPN transistor with AEC-Q100 qualification. This part maintains the 400 V breakdown voltage and 500 mA maximum collector current of the DZT658-13. Power dissipation is rated at 1.4 W. Transition frequency is specified at 30 MHz, lower than the original 50 MHz. This substitute is suitable for automotive applications requiring AEC-Q100 qualification with equivalent current handling to the original part.

PZTA44,115 (Nexperia USA Inc.)

The PZTA44,115 is an automotive-grade NPN transistor with AEC-Q101 qualification. This part operates at 400 V breakdown voltage with a maximum collector current of 300 mA, which is lower than the DZT658-13 specification of 500 mA. Power dissipation is rated at 1.35 W. Transition frequency is 20 MHz. This substitute is applicable only in applications where the reduced current rating of 300 mA is acceptable and automotive-grade AEC-Q101 qualification is required.

Frequently Asked Questions (FAQ)

Q: Can the FZT658TA be used as a direct replacement for the DZT658-13?

A: Yes. The FZT658TA maintains identical electrical specifications across all critical parameters including breakdown voltage, collector current, DC current gain, and saturation voltage. The FZT658TA offers enhanced power dissipation at 2 W. Both parts use the SOT-223-3 package and are RoHS3 compliant. The FZT658TA is active product status, making it suitable for direct substitution.

Q: What is the primary difference between the Diodes Incorporated substitutes and the Nexperia substitutes?

A: The Diodes Incorporated FZT658TA maintains identical electrical specifications to the DZT658-13. The Nexperia substitutes (PBHV8140Z,115, PBHV8540Z,115, PZTA44,115) are automotive-grade components with AEC-Q100 or AEC-Q101 qualification. Nexperia parts feature lower transition frequencies and modified saturation voltage characteristics compared to the original part.

Q: Can I use PBHV8140Z,115 in place of DZT658-13 if my application does not require automotive qualification?

A: Yes. The PBHV8140Z,115 exceeds the electrical specifications of the DZT658-13 in collector current capacity (1 A versus 500 mA) and power dissipation (1.45 W versus 1 W). The 400 V breakdown voltage and SOT-223 package are compatible. Automotive qualification is an additional feature that does not prevent use in non-automotive applications. Transition frequency is reduced to 25 MHz.

Q: Is the PZTA44,115 suitable for all applications using the DZT658-13?

A: No. The PZTA44,115 has a maximum collector current rating of 300 mA, which is lower than the DZT658-13 specification of 500 mA. This substitute is applicable only in applications where the circuit design operates within the 300 mA current limit. Verify circuit current requirements before selecting this part.

Q: Are all substitute parts available in the same package as the DZT658-13?

A: Yes. All substitute parts use the SOT-223 package family with TO-261-4 and TO-261AA case designations. The DZT658-13 is specified as SOT-223-3, while substitute parts are specified as SOT-223. Both designations refer to the same physical package suitable for surface mount assembly.

Q: What is the significance of the operating temperature range difference between DZT658-13 and the Nexperia substitutes?

A: The DZT658-13 specifies an operating temperature range of -55°C to 150°C (TJ). The Nexperia substitutes specify only the maximum temperature of 150°C (TJ) without explicit minimum temperature specification. For applications requiring operation below 0°C, verify the Nexperia part datasheets for minimum operating temperature limits.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All substitute parts listed (FZT658TA, PBHV8140Z,115, PBHV8540Z,115, PZTA44,115) are RoHS3 compliant, matching the compliance status of the DZT658-13.

Q: What is the difference between AEC-Q100 and AEC-Q101 qualifications?

A: AEC-Q100 and AEC-Q101 are automotive qualification standards. PBHV8140Z,115 and PBHV8540Z,115 carry AEC-Q100 qualification. PZTA44,115 carries AEC-Q101 qualification. Both qualifications indicate automotive-grade reliability and testing standards. Specific qualification requirements depend on the end application and customer specifications.

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