DMT10H015LPS-13 Equivalent & Substitute Parts

Part Overview

The DMT10H015LPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with 7.3A continuous drain current at 25°C ambient temperature and 44A at case temperature. This device is packaged in a PowerDI5060-8 surface mount configuration and is designed for power switching applications requiring efficient thermal management and compact form factors. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level rating.

Substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit operation within the electrical and mechanical parameters of alternative qualified devices.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	7.3	A
Continuous Drain Current @ Case Temp (Tc)	44	A
RDS(on) Maximum @ 20A, 10V	16	mOhm
Gate Threshold Voltage @ 250µA	3.5	V
Gate Charge @ 10V	33.3	nC
Input Capacitance @ 50V	1871	pF
Power Dissipation (Ta)	1.3	W
Power Dissipation (Tc)	46	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs is determined by the following criteria:

Voltage Rating: The substitute part must meet or exceed the 100V Vdss requirement of the primary device. Parts rated below 100V are not suitable for direct substitution in circuits designed for this voltage class.

Continuous Drain Current: The substitute must support the required continuous current at both ambient (Ta) and case (Tc) temperature conditions. Current ratings below the primary part's specifications limit thermal headroom and may cause thermal runaway in power-limited applications.

On-State Resistance (RDS(on)): Lower RDS(on) values reduce conduction losses and heat generation. Substitute parts with RDS(on) values equal to or lower than the primary part maintain or improve efficiency characteristics.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with comparable or lower values ensure compatibility with existing gate drive circuits.

Package and Mounting: Surface mount packages in the 8-PowerTDFN family maintain mechanical and thermal interface compatibility with PCB layouts designed for the primary part.

Compliance and Status: All substitute parts must maintain active production status and equivalent RoHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Parameter	DMT10H015LPS-13 (Diodes)	CSD19534Q5AT (TI)	FDMS3662 (onsemi)	FDMS86320 (onsemi)
Manufacturer	Diodes Incorporated	Texas Instruments	onsemi	onsemi
Vdss (V)	100	100	100	80
Id @ Ta (A)	7.3	—	8.9	10.5
Id @ Tc (A)	44	44	49	22
RDS(on) Max (mOhm)	16 @ 20A, 10V	15.1 @ 10A, 10V	14.8 @ 8.9A, 10V	11.7 @ 10.5A, 10V
Vgs(th) Max @ 250µA (V)	3.5	3.4	4.5	4.5
Gate Charge @ 10V (nC)	33.3	22	75	41
Ciss @ 50V (pF)	1871	1680	4620	2640
Power Dissipation @ Ta (W)	1.3	3.2	2.5	2.5
Power Dissipation @ Tc (W)	46	63	104	69
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerTDFN	8-VSONP (5x6)	8-PQFN (5x6)	8-PQFN (5x6)
Packaging Type	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®	Tape & Reel (TR)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

CSD19534Q5AT (Texas Instruments NexFET™ Series)

This part meets the 100V voltage requirement and matches the 44A case temperature current rating of the primary device. The RDS(on) value of 15.1 mOhm is lower than the primary part, resulting in reduced conduction losses. Gate charge is 22 nC, which is lower than the primary part's 33.3 nC, enabling faster switching transitions. Input capacitance is 1680 pF, slightly lower than the primary part. The 8-VSONP (5x6) package differs from the primary part's PowerDI5060-8, requiring PCB layout verification for thermal and mechanical compatibility. This part is suitable for applications where the package footprint change is acceptable and improved efficiency is beneficial. REACH status is affected, requiring compliance verification in regulated markets.

FDMS3662 (onsemi PowerTrench® Series)

This part meets the 100V voltage requirement and exceeds the primary part's continuous current rating at case temperature (49A versus 44A). The RDS(on) value of 14.8 mOhm is lower than the primary part, improving efficiency. However, gate charge is significantly higher at 75 nC compared to 33.3 nC, which may require gate drive circuit adjustment for optimal switching performance. Input capacitance is substantially higher at 4620 pF, increasing gate drive power requirements. The 8-PQFN (5x6) package differs from the primary part, requiring PCB layout verification. This part is suitable for applications prioritizing current capacity and thermal performance over switching speed. REACH status is unaffected.

FDMS86320 (onsemi PowerTrench® Series)

This part is rated for 80V Vdss, which is below the primary part's 100V specification. This voltage rating limitation restricts its use to applications operating at 80V or below. The continuous current at case temperature is 22A, significantly lower than the primary part's 44A, limiting thermal capacity. The RDS(on) value of 11.7 mOhm is the lowest among all candidates, providing superior efficiency in low-voltage applications. Gate charge of 41 nC and input capacitance of 2640 pF are moderate values. The 8-PQFN (5x6) package differs from the primary part. This part is suitable only for designs operating at 80V maximum and requiring lower current capacity. REACH status is unaffected.

Frequently Asked Questions (FAQ)

Q: Can CSD19534Q5AT replace DMT10H015LPS-13 in all applications?

A: CSD19534Q5AT is electrically compatible for applications operating at 100V or below with current requirements up to 44A at case temperature. The primary consideration is package compatibility. The CSD19534Q5AT uses an 8-VSONP (5x6) package while the primary part uses PowerDI5060-8. PCB layout, thermal interface, and mechanical mounting must be verified before substitution.

Q: What is the impact of higher gate charge in FDMS3662?

A: Gate charge of 75 nC in FDMS3662 compared to 33.3 nC in the primary part increases the charge that must be supplied by the gate drive circuit during switching transitions. This results in higher gate drive power consumption and potentially slower switching speeds if the gate drive circuit is current-limited. Gate drive circuit capability must be verified before substitution.

Q: Why is FDMS86320 listed as a substitute if it has lower voltage rating?

A: FDMS86320 is included as a substitute for applications where the circuit operates at 80V or below. The 80V rating is a limiting factor that restricts its use to a subset of potential applications for the primary part. Substitution is valid only when the actual operating voltage does not exceed 80V.

Q: Are all substitute parts available in the same packaging format?

A: No. The primary part DMT10H015LPS-13 uses PowerDI5060-8 packaging in Tape & Reel format. CSD19534Q5AT uses 8-VSONP (5x6) in Cut Tape and Digi-Reel® formats. FDMS3662 and FDMS86320 use 8-PQFN (5x6) in Cut Tape and Digi-Reel® formats, with FDMS86320 also available in Tape & Reel. Package differences require PCB layout and thermal design verification.

Q: Do all substitute parts meet the same compliance standards?

A: All substitute parts are RoHS3 compliant and have active production status. CSD19534Q5AT has affected REACH status, requiring additional compliance verification in regulated markets. FDMS3662 and FDMS86320 have unaffected REACH status. Compliance requirements for the end application must be verified before final part selection.

Q: What is the primary advantage of CSD19534Q5AT over the primary part?

A: CSD19534Q5AT offers lower gate charge (22 nC versus 33.3 nC) and lower input capacitance (1680 pF versus 1871 pF), enabling faster switching transitions and reduced gate drive power requirements. RDS(on) is also slightly lower at 15.1 mOhm, improving conduction efficiency.

Q: Which substitute part has the best thermal performance?

A: FDMS3662 has the highest power dissipation rating at case temperature (104W versus 46W for the primary part), indicating superior thermal performance in high-current applications. However, this advantage is offset by higher gate charge and input capacitance, which may require gate drive circuit modifications.

Q: Can substitute parts be mixed in the same design?

A: Mixing different MOSFET models in parallel or series configurations requires careful analysis of current sharing, thermal distribution, and switching synchronization. Differences in RDS(on), gate charge, and threshold voltage between parts can lead to unequal current distribution and thermal stress. Single-part selection is recommended for optimal reliability.

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