DMN3030LFG-13 Equivalent & Substitute Parts Engineering Reference

Part Overview

DMN3030LFG-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, classified under Transistors, FETs, MOSFETs. This device features a drain to source voltage (Vdss) of 30 V, continuous drain current (Id) of 5.3A (Ta), and a maximum power dissipation of 900mW (Ta). The DMN3030LFG-13 is rated for automotive applications and complies with AEC-Q101 and ROHS3. The product is marked Obsolete, creating the necessity to identify alternative models with comparable electrical, mechanical, and compliance characteristics for direct substitution in existing designs or inventory replenishment.

Key Parameters

Parameter	DMN3030LFG-13
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.4 nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	751 pF @ 10 V
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade / Qualification	Automotive / AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PowerDI3333-8
Package / Case	8-PowerVDFN
RoHS Status	ROHS3 Compliant
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute part selection for DMN3030LFG-13 is governed by the following strictly matched parameters: FET type, MOSFET technology, drain to source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), maximum power dissipation, operating temperature range, automotive/AEC-Q101 qualification, mounting type, package, and RoHS compliance. Only parts fitting these criteria are included as substitutes, matching electrical and mechanical parameters as specified.

Parameter Comparison

Parameter	DMN3030LFG-13	DMN3025LFV-13	RQ3E080GNTB
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)	25A (Tc)	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 10A, 10V	18mOhm @ 7A, 10V	16.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA	2V @ 250µA	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	17.4 nC @ 10V	9.8 nC @ 10V	5.8 nC @ 10V
Vgs (Max)	±25V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	751 pF @ 10 V	500 pF @ 15 V	295 pF @ 15 V
Power Dissipation (Max)	900mW (Ta)	900mW (Ta)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Grade / Qualification	Automotive / AEC-Q101	Automotive / AEC-Q101	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	PowerDI3333-8	PowerDI3333-8 (Type UX)	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

The DMN3030LFG-13 is classified as obsolete. Substitute selection is based on maintaining automotive qualification (AEC-Q101), ROHS3 compliance, and availability. DMN3025LFV-13 is an active product and meets automotive grade and qualification requirements. RQ3E080GNTB is also active and ROHS3 compliant but does not list automotive/AEC-Q101 qualification in the provided parameters. Surface mount packages and supported cases remain consistent across all listed devices.

Frequently Asked Questions (FAQ)

Q1: What parameters are required for direct substitution of DMN3030LFG-13?
A1: Direct substitution requires matching FET type, technology, drain-source voltage, continuous drain current, drive voltage, Rds On, gate threshold voltage, gate charge, maximum gate-source voltage, input capacitance, power dissipation, operating temperature, package, mounting type, RoHS compliance, and automotive/AEC-Q101 qualification (if needed).

Q2: Are the substitute MOSFETs available in similar packages for drop-in replacement?
A2: All listed devices feature surface mount configurations and are offered in 8-PowerVDFN or similar packages, supporting physical compatibility as specified in supplied data.

Q3: How should automotive qualification influence substitute selection?
A3: Substitute selection for automotive applications requires explicit AEC-Q101 qualification. DMN3025LFV-13 is specified as automotive grade and qualified, aligning with DMN3030LFG-13 requirements.

Q4: Is it necessary to check compliance status before choosing a substitute?
A4: Only parts with provided ROHS3 compliance and (if applicable) automotive qualification should be considered, based strictly on supplied parameter data.

Q5: Can RQ3E080GNTB be used in all applications where DMN3030LFG-13 was used?
A5: RQ3E080GNTB meets most electrical and package parameters but lacks automotive/AEC-Q101 qualification in provided data and should be evaluated for suitability where this certification is mandatory.

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