DMN3010LFG-13 Equivalent & Substitute Parts

Part Overview

The DMN3010LFG-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C (Ta) and 30A at case temperature (Tc). This device is housed in a PowerDI3333-8 surface mount package and is designed for power switching applications requiring compact form factors and efficient thermal management. The part is Active status and ROHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the critical operating parameters. Alternative sources and packaging configurations may be required due to inventory availability, supply chain considerations, or application-specific thermal and current requirements.

Substiute Parts

DMN3010LFG-13

Diodes IncorporatedIn Stock: 23410DMN3010LFG-13 Datasheet

Current PartRFQ

DMN3010LFG-7

Diodes IncorporatedIn Stock: 79179DMN3010LFG-7 Datasheet

Parametric EquivalentRFQ

CSD17579Q3A

Texas InstrumentsIn Stock: 25410CSD17579Q3A Datasheet

MFR RecommendedRFQ

CSD17579Q3AT

Texas InstrumentsIn Stock: 1431CSD17579Q3AT Datasheet

MFR RecommendedRFQ

RQ3E100BNTB

Rohm SemiconductorIn Stock: 121946RQ3E100BNTB Datasheet

MFR RecommendedRFQ

RQ3E120BNTB

Rohm SemiconductorIn Stock: 3903RQ3E120BNTB Datasheet

MFR RecommendedRFQ

RQ3E120GNTB

Rohm SemiconductorIn Stock: 15584RQ3E120GNTB Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMN3010LFG-13 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Direct Substitutes): Parts that maintain identical electrical specifications and package form factor. These substitutes share the same Vdss (30V), similar continuous drain current ratings, matching RDS(on) characteristics, and identical thermal operating range. The DMN3010LFG-7 falls into this category, differing only in packaging configuration (Tape & Reel variant of the same base product).

Manufacturer Recommended Alternatives: Parts that meet or exceed the primary electrical requirements (Vdss, continuous drain current, RDS(on), gate charge, and operating temperature) but may differ in package type, thermal performance, or gate charge characteristics. These include devices from Texas Instruments (CSD17579 series) and Rohm Semiconductor (RQ3E series). Substitution is valid when the application requirements are satisfied by the alternative part's electrical performance envelope.

Critical Substitution Parameters:

• Drain-to-Source Voltage (Vdss): Minimum 30V
• Continuous Drain Current (Ta): Minimum 11A
• RDS(on) @ 10V: Maximum 10.4mOhm
• Gate Threshold Voltage: 1.9V to 2.5V
• Operating Temperature: -55°C to 150°C minimum
• Mounting Type: Surface Mount
• Technology: N-Channel MOSFET (Metal Oxide)

Parameter Comparison

Engineering Selection Recommendations

Direct Substitution (Parametric Equivalent):

The DMN3010LFG-7 is a direct parametric equivalent to the DMN3010LFG-13. Both devices share identical electrical specifications, thermal characteristics, and package form factor (8-PowerVDFN). The only distinction is the packaging configuration (Tape & Reel format). This part is suitable for applications requiring the exact same performance envelope as the primary part. Both are Active status and ROHS3 compliant with MSL 1 rating.

Manufacturer Recommended Alternatives:

The CSD17579Q3A and CSD17579Q3AT (Texas Instruments NexFET™ series) provide enhanced performance characteristics with higher continuous drain current (20A Ta), lower gate charge (15 nC), and reduced input capacitance (998 pF). These devices are suitable for applications where improved switching speed and reduced gate drive requirements are beneficial. The CSD17579Q3AT is packaged in Tape & Reel format, matching the primary part's packaging preference.

The RQ3E120BNTB and RQ3E120GNTB (Rohm Semiconductor) offer 12A continuous drain current with RDS(on) values of 9.3 mOhm and 8.8 mOhm respectively. The RQ3E120GNTB demonstrates superior gate charge characteristics (10 nC) and lower input capacitance (590 pF), making it suitable for high-frequency switching applications. Both Rohm devices are available in Cut Tape & Digi-Reel format.

All substitute parts maintain the 30V Vdss rating, operate across the -55°C to 150°C temperature range, and comply with ROHS3 and MSL 1 requirements. Selection should be based on specific application requirements regarding continuous current demand, switching frequency, thermal dissipation capability, and packaging format availability.

Frequently Asked Questions (FAQ)

Q: Can the DMN3010LFG-7 be used as a direct replacement for the DMN3010LFG-13?

A: Yes. The DMN3010LFG-7 is a parametric equivalent with identical electrical specifications, thermal performance, and package type. The difference is limited to packaging format (Tape & Reel configuration). Both parts are suitable for the same applications without circuit modification.

Q: What are the key differences between the Diodes Incorporated DMN3010 series and the Texas Instruments CSD17579 series?

A: The primary differences are continuous drain current (11A vs. 20A at Ta), gate charge (37 nC vs. 15 nC), and input capacitance (2075 pF vs. 998 pF). The CSD17579 series offers higher current capability and faster switching characteristics due to lower gate charge. Both maintain 30V Vdss and -55°C to 150°C operating range. Package types differ (PowerDI3333-8 vs. 8-VSONP).

Q: Are the Rohm Semiconductor RQ3E120BNTB and RQ3E120GNTB interchangeable?

A: Both parts share identical electrical specifications for Vdss (30V), continuous drain current (12A Ta), and operating temperature range. The RQ3E120GNTB provides superior switching characteristics with lower gate charge (10 nC vs. 29 nC) and reduced input capacitance (590 pF vs. 1500 pF). Selection depends on application switching frequency requirements. Both use the 8-HSMT package format.

Q: What is the impact of different package types on substitution?

A: Package type affects thermal performance, PCB layout requirements, and manufacturing compatibility. The DMN3010LFG-13 uses 8-PowerVDFN, while alternatives use 8-VSONP or 8-HSMT packages. All are 8-pin surface mount devices with similar footprints, but thermal characteristics and pad configurations may differ. PCB layout and thermal management design should be verified for alternative packages.

Q: Can I use a higher-rated current device as a substitute?

A: Yes, provided all other electrical parameters meet or exceed the application requirements. Devices with higher continuous drain current ratings (such as CSD17579Q3A at 20A) are suitable substitutes for applications requiring 11A. The higher current rating provides design margin and does not negatively impact circuit operation. Verify that gate drive voltage and switching characteristics remain compatible.

Q: Are all substitute parts ROHS3 compliant and MSL 1 rated?

A: Yes. All parts listed—DMN3010LFG-13, DMN3010LFG-7, CSD17579Q3A, CSD17579Q3AT, RQ3E120BNTB, and RQ3E120GNTB—are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating. All parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: What factors should determine my choice between substitute options?

A: Selection criteria include: (1) continuous drain current requirement, (2) switching frequency and gate charge sensitivity, (3) thermal dissipation capability and power budget, (4) package type compatibility with existing PCB design, (5) packaging format availability (Tape & Reel vs. Cut Tape), and (6) supply chain and inventory considerations. All listed substitutes maintain the 30V Vdss rating and -55°C to 150°C operating range required for the primary application.