DMN10H220LFVW-13 Equivalent & Substitute Parts

Part Overview

The DMN10H220LFVW-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100 V drain-to-source voltage with 11 A continuous drain current at 25°C. This device is housed in a PowerDI3333-8 (SWP) Type UX surface mount package with wettable flank technology. The part is currently in active production status with 740 pieces available in new original inventory. Finding equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and maintain component availability across manufacturing cycles.

Substiute Parts

DMN10H220LFVW-13
Diodes IncorporatedIn Stock: 752DMN10H220LFVW-13 Datasheet
DMN10H220LFVW-13
Current Part
DMN10H220LFVW-7
Diodes IncorporatedIn Stock: 933DMN10H220LFVW-7 Datasheet
DMN10H220LFVW-7
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 11 A (Tc)
Rds On (Max) @ 2A, 10V 222 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.5 V
Gate Charge (Qg) @ 10V 6.7 nC
Input Capacitance (Ciss) @ 50V 366 pF
Power Dissipation (Max) 2.4 (Ta), 41 (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-PowerVDFN
Mounting Type Surface Mount, Wettable Flank
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the DMN10H220LFVW-13 is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

  • Drain-to-source voltage rating (Vdss): 100 V
  • Continuous drain current (Id) @ 25°C: 11 A
  • On-state resistance (Rds On) @ 2A, 10V: 222 mOhm
  • Gate threshold voltage (Vgs(th)): 2.5 V @ 250µA
  • Gate charge (Qg): 6.7 nC @ 10V
  • Input capacitance (Ciss): 366 pF @ 50V
  • Maximum gate voltage (Vgs): ±20V
  • Power dissipation capability: 2.4 W (Ta), 41 W (Tc)

Physical and Environmental Specifications:

  • Package type: 8-PowerVDFN (PowerDI3333-8 SWP Type UX)
  • Mounting configuration: Surface mount with wettable flank
  • Operating temperature range: -55°C to 150°C (TJ)
  • Regulatory compliance: ROHS3 Compliant, REACH Unaffected

Substitute parts must match all electrical parameters, maintain identical package geometry and mounting characteristics, and satisfy the same regulatory requirements. The DMN10H220LFVW-13 belongs to the DMN10 base product family manufactured by Diodes Incorporated.

Parameter Comparison

Parameter DMN10H220LFVW-13 DMN10H220LFVW-7 Match Status
Manufacturer Diodes Incorporated Diodes Incorporated Identical
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Vdss 100 V 100 V Identical
Id @ 25°C 11 A (Tc) 11 A (Tc) Identical
Rds On (Max) @ 2A, 10V 222 mOhm 222 mOhm Identical
Vgs(th) @ 250µA 2.5 V 2.5 V Identical
Gate Charge (Qg) @ 10V 6.7 nC 6.7 nC Identical
Ciss @ 50V 366 pF 366 pF Identical
Vgs (Max) ±20 V ±20 V Identical
Power Dissipation (Max) 2.4 W (Ta), 41 W (Tc) 2.4 W (Ta), 41 W (Tc) Identical
Operating Temperature -55°C to 150°C (TJ) -55°C to 150°C (TJ) Identical
Package Type 8-PowerVDFN 8-PowerVDFN Identical
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
REACH Status REACH Unaffected REACH Unaffected Identical
Product Status Active Active Identical
Base Product Number DMN10 DMN10 Identical

Engineering Selection Recommendations

The DMN10H220LFVW-7 is a direct parametric equivalent to the DMN10H220LFVW-13. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications, package geometry, and regulatory compliance certifications. The difference between these part numbers reflects manufacturing date codes or tape reel configurations, not functional or electrical variations.

Selection between DMN10H220LFVW-13 and DMN10H220LFVW-7 should be based on:

Inventory Availability: DMN10H220LFVW-13 has 740 pieces in stock; DMN10H220LFVW-7 has 885 pieces in stock.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying equivalent environmental and safety requirements.

Product Status: Both parts are in active production, ensuring long-term availability and continued manufacturer support.

Package and Mounting Compatibility: Both parts utilize the identical 8-PowerVDFN package with wettable flank surface mount technology, ensuring direct PCB compatibility without design modifications.

Frequently Asked Questions (FAQ)

Q: Can DMN10H220LFVW-7 be used as a direct replacement for DMN10H220LFVW-13 in existing designs?

A: Yes. The DMN10H220LFVW-7 is a parametric equivalent with identical electrical specifications, package type, and mounting configuration. No circuit modifications or PCB layout changes are required.

Q: What is the difference between DMN10H220LFVW-13 and DMN10H220LFVW-7?

A: The suffix difference (-13 versus -7) indicates manufacturing date codes or tape reel configurations. All electrical parameters, thermal characteristics, and package specifications are identical.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both DMN10H220LFVW-13 and DMN10H220LFVW-7 are ROHS3 compliant and REACH unaffected, meeting equivalent regulatory requirements for commercial and industrial applications.

Q: What is the PowerDI3333-8 (SWP) Type UX package?

A: This is an 8-pin surface mount power package designated as 8-PowerVDFN. The wettable flank design improves solder joint reliability and enables automated optical inspection during manufacturing.

Q: Can these parts be used in high-temperature applications?

A: Yes. Both parts operate across the temperature range of -55°C to 150°C (junction temperature), supporting applications requiring extended thermal operating ranges.

Q: What is the continuous drain current rating at 25°C?

A: Both parts are rated for 11 A continuous drain current at 25°C (Tc), with maximum power dissipation of 41 W at case temperature (Tc) and 2.4 W at ambient temperature (Ta).

Q: Are there any differences in gate charge or input capacitance between these parts?

A: No. Both parts have identical gate charge of 6.7 nC @ 10V and input capacitance of 366 pF @ 50V, ensuring equivalent switching performance and drive circuit requirements.

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