DMC961040R Equivalent & Substitute Parts

Part Overview

The DMC961040R is a pre-biased dual NPN bipolar transistor manufactured by Panasonic Electronic Components in the SSMini5-F4-B surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for applications requiring compact, pre-configured switching or amplification stages. The part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

DMC961040R
Panasonic Electronic ComponentsIn Stock: 21473DMC961040R Datasheet
DMC961040R
Current Part
EMG5T2R
Rohm SemiconductorIn Stock: 2645EMG5T2R Datasheet
EMG5T2R
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EMH9FHAT2R
Rohm SemiconductorIn Stock: 8845EMH9FHAT2R Datasheet
EMH9FHAT2R
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RN1707JE(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 12165RN1707JE(TE85L,F) Datasheet
RN1707JE(TE85L,F)
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Key Parameters

Parameter Value Unit
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) 80 @ 5mA, 10V
Vce Saturation (Max) 250 mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500 nA
Power - Max 125 mW
Mounting Type Surface Mount
Package / Case SOT-665
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the DMC961040R is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Transistor configuration: 2 NPN - Pre-Biased (Dual)
  • Maximum collector current: 100 mA
  • Maximum collector-emitter breakdown voltage: 50 V
  • Base resistor (R1): 10 kOhms
  • Emitter-base resistor (R2): 47 kOhms
  • Maximum collector cutoff current: 500 nA
  • Mounting type: Surface Mount
  • RoHS compliance status

Acceptable Variation Parameters:

  • DC current gain (hFE): Minimum 68 or higher at specified test conditions
  • Vce saturation: Up to 300 mV (original specification 250 mV)
  • Power dissipation: 125 mW or higher
  • Transition frequency: 250 MHz or higher (original unspecified)
  • Package form factor: Alternative surface mount packages with equivalent lead configuration

Three substitute parts meet these criteria: EMG5T2R (Rohm Semiconductor), EMH9FHAT2R (Rohm Semiconductor), and RN1707JE(TE85L,F) (Toshiba Semiconductor and Storage).

Parameter Comparison

Parameter DMC961040R (Panasonic) EMG5T2R (Rohm) EMH9FHAT2R (Rohm) RN1707JE(TE85L,F) (Toshiba)
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) 80 @ 5mA, 10V 68 @ 5mA, 5V 68 @ 5mA, 5V 80 @ 10mA, 5V
Vce Saturation (Max) 250 mV @ 500µA, 10mA 300 mV @ 250µA, 5mA 300 mV @ 250µA, 5mA 300 mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500 nA 500 nA 500 nA
Frequency - Transition 250 MHz 250 MHz 250 MHz
Power - Max 125 mW 150 mW 150 mW 100 mW
Package / Case SOT-665 6-SMD (5 Leads), Flat Lead (EMT5) SOT-563, SOT-666 (EMT6) SOT-553 (ESV)
Product Status Discontinued at DiGi Electronics Active Not For New Designs Active
RoHS Status RoHS Compliant ROHS3 Compliant ROHS3 Compliant RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

EMG5T2R (Rohm Semiconductor) is the primary substitute for the DMC961040R. This part maintains active product status, carries ROHS3 compliance, and provides all critical electrical parameters within acceptable ranges. The EMG5T2R offers enhanced transition frequency (250 MHz) and increased power dissipation capability (150 mW) compared to the original specification. The EMT5 package provides mechanical compatibility through equivalent surface mount construction with 5-lead flat lead configuration.

RN1707JE(TE85L,F) (Toshiba Semiconductor and Storage) serves as a secondary substitute with active product status and RoHS compliance. This part maintains the 50 V breakdown voltage specification and achieves the same 80 minimum hFE as the original part. The emitter-coupled configuration and SOT-553 package provide alternative implementation for applications where this topology is acceptable. Power dissipation is rated at 100 mW, which is lower than the original 125 mW specification.

EMH9FHAT2R (Rohm Semiconductor) is not recommended for new designs due to its product status designation. While this part meets electrical parameter requirements and carries automotive qualification (AEC-Q101), its "Not For New Designs" status makes it unsuitable for ongoing production or development applications.

Frequently Asked Questions (FAQ)

Q: Can EMG5T2R directly replace DMC961040R in existing designs?

A: EMG5T2R meets all critical electrical parameters and maintains surface mount construction. However, the package form differs (EMT5 versus SOT-665). Physical board layout verification is required to confirm mechanical fit within the available footprint space.

Q: What is the difference between the Rohm EMG5T2R and EMH9FHAT2R?

A: Both parts share identical electrical specifications (10 kOhm base resistor, 47 kOhm emitter-base resistor, 100 mA maximum collector current). The primary differences are package type (EMT5 versus EMT6), product status (Active versus Not For New Designs), and automotive qualification (EMH9FHAT2R only). EMG5T2R is the recommended choice for new applications.

Q: Why does RN1707JE(TE85L,F) specify "Emitter Coupled" configuration?

A: The Toshiba part incorporates an emitter-coupled topology, which is an alternative pre-biasing architecture. This configuration maintains the same external resistor values (10 kOhm and 47 kOhm) and electrical performance but uses a different internal circuit topology. This part is functionally equivalent for standard switching and amplification applications.

Q: Is the 100 mW power rating of RN1707JE(TE85L,F) sufficient if the original part is rated 125 mW?

A: The RN1707JE(TE85L,F) power rating of 100 mW is lower than the original 125 mW specification. Applications operating near the thermal limits of the original part may require thermal analysis to confirm adequate margin with this substitute. For most standard applications operating well below maximum power dissipation, this difference is not limiting.

Q: Are all substitute parts RoHS compliant?

A: Yes. EMG5T2R and EMH9FHAT2R carry ROHS3 compliance. RN1707JE(TE85L,F) carries RoHS compliance. All three parts meet current environmental regulatory requirements.

Q: What is the moisture sensitivity level for these substitute parts?

A: All substitute parts, including EMG5T2R, EMH9FHAT2R, and RN1707JE(TE85L,F), carry MSL 1 (Unlimited) rating, matching the original DMC961040R specification. No special moisture control measures are required during storage or handling.

Q: Can package differences affect circuit performance?

A: Package differences (SOT-665, EMT5, EMT6, SOT-553) do not affect electrical performance. However, physical dimensions and lead spacing vary. PCB footprint compatibility must be verified before substitution. Consult package datasheets for precise dimensional specifications.

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