DF08S/27 Bridge Rectifier Equivalent & Substitute Parts

Part Overview

The DF08S/27 is a single-phase bridge rectifier manufactured by Vishay General Semiconductor - Diodes Division, rated for 800 V peak reverse voltage and 1 A average rectified current. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The DF08S/27 features a 4-SMD Gull Wing package (DFS supplier package) and operates across a temperature range of -55°C to 150°C. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) support broad deployment in industrial and commercial electronics.

Substiute Parts

DF08S/27
Vishay General Semiconductor - Diodes DivisionIn Stock: 94696DF08S/27 Datasheet
DF08S/27
Current Part
DF08S-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 5799DF08S-E3/45 Datasheet
DF08S-E3/45
Direct
DF08S-E3/77
Vishay General Semiconductor - Diodes DivisionIn Stock: 10348DF08S-E3/77 Datasheet
DF08S-E3/77
Parametric Equivalent
DF08S-E3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 975DF08S-E3/I Datasheet
DF08S-E3/I
Parametric Equivalent
DF08SA-E3/77
Vishay General Semiconductor - Diodes DivisionIn Stock: 5206DF08SA-E3/77 Datasheet
DF08SA-E3/77
Parametric Equivalent
DF08S
onsemiIn Stock: 35137DF08S Datasheet
DF08S
MFR Recommended
DF08S
onsemiIn Stock: 35137DF08S Datasheet
DF08S
MFR Recommended
DF08S-T
Diodes IncorporatedIn Stock: 10166DF08S-T Datasheet
DF08S-T
MFR Recommended
DF1508S-G
Comchip TechnologyIn Stock: 1036DF1508S-G Datasheet
DF1508S-G
MFR Recommended
ABS8-HF
Comchip TechnologyIn Stock: 745ABS8-HF Datasheet
ABS8-HF
Parametric Equivalent
ABS8U
SMC Diode SolutionsIn Stock: 1076ABS8U Datasheet
ABS8U
Parametric Equivalent
B108S_R2_00001
Panjit International Inc.In Stock: 3874B108S_R2_00001 Datasheet
B108S_R2_00001
Parametric Equivalent
DB106S
SMC Diode SolutionsIn Stock: 33321DB106S Datasheet
DB106S
Parametric Equivalent
DBLS106G
Taiwan Semiconductor CorporationIn Stock: 2244DBLS106G Datasheet
DBLS106G
Parametric Equivalent
DBLS106GH
Taiwan Semiconductor CorporationIn Stock: 4066DBLS106GH Datasheet
DBLS106GH
Parametric Equivalent
DF08S1
onsemiIn Stock: 10192DF08S1 Datasheet
DF08S1
Parametric Equivalent
DI108S_R2_00001
Panjit International Inc.In Stock: 2414DI108S_R2_00001 Datasheet
DI108S_R2_00001
Parametric Equivalent
MDB8S
onsemiIn Stock: 3596MDB8S Datasheet
MDB8S
Parametric Equivalent

Key Parameters

Parameter Value
Diode Type Single Phase
Technology Standard
Voltage - Peak Reverse (Max) 800 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD, Gull Wing
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution for the DF08S/27 is determined by strict equivalence across the following electrical and mechanical parameters:

  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A (or higher)
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A (or lower)
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V (or lower)
  • Operating Temperature: -55°C ~ 150°C (TJ) (or wider range)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Diode Type: Single Phase
  • Technology: Standard

Substitute parts are grouped into three categories based on relationship type: Direct Manufacturer equivalents (same part number variants with different packaging), Parametric Equivalents (identical electrical specifications with alternative packaging), and MFR Recommended alternatives (functionally compatible parts from other manufacturers).

Parameter Comparison

Part Number Manufacturer Voltage - Peak Reverse (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Operating Temperature Package / Case Product Status Packaging Type
DF08S/27 Vishay General Semiconductor - Diodes Division 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Obsolete -
DF08S-E3/45 Vishay General Semiconductor - Diodes Division 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active Tube
DF08S-E3/77 Vishay General Semiconductor - Diodes Division 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active Cut Tape (CT) & Digi-Reel®
DF08S-E3/I Vishay General Semiconductor - Diodes Division 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active Tape & Reel (TR)
DF08SA-E3/77 Vishay General Semiconductor - Diodes Division 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active Cut Tape (CT) & Digi-Reel®
DF08S onsemi 800 V 1.5 A 1.1 V @ 1 A 10 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Not For New Designs Cut Tape (CT) & Digi-Reel®
DF08S-T Diodes Incorporated 800 V 1 A 1.1 V @ 1 A 10 µA @ 800 V -65°C ~ 150°C 4-SMD, Gull Wing Active Tape & Reel (TR)
DF1508S-G Comchip Technology 800 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active Tube
ABS8-HF Comchip Technology 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active -
ABS8U SMC Diode Solutions 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C 4-SMD, Gull Wing Active Tape & Reel (TR)

Engineering Selection Recommendations

For applications requiring direct replacement of the obsolete DF08S/27, the Vishay DF08S-E3 series (DF08S-E3/45, DF08S-E3/77, DF08S-E3/I, DF08SA-E3/77) provides identical electrical specifications and active product status. These parts maintain the same 800 V peak reverse voltage, 1 A average rectified current, and 5 µA reverse leakage characteristics. Selection among these variants depends on packaging requirements: Tube for DF08S-E3/45, Cut Tape & Digi-Reel for DF08S-E3/77 and DF08SA-E3/77, and Tape & Reel for DF08S-E3/I. All Vishay variants are ROHS3 compliant with MSL 1 rating.

For applications where higher current capacity is acceptable, the DF1508S-G from Comchip Technology provides 1.5 A average rectified current while maintaining 800 V peak reverse voltage and identical forward voltage characteristics. This part is active and ROHS3 compliant.

The Diodes Incorporated DF08S-T offers active product status with 1 A current rating and an extended operating temperature range of -65°C to 150°C. Current - Reverse Leakage is specified at 10 µA @ 800 V, which is higher than the original specification.

The onsemi DF08S is classified as Not For New Designs and carries higher reverse leakage (10 µA @ 800 V) with increased current capacity (1.5 A), making it suitable only for legacy system maintenance.

Comchip Technology ABS8-HF and SMC Diode Solutions ABS8U provide parametric equivalence with identical electrical specifications (800 V, 1 A, 1.1 V forward voltage, 5 µA reverse leakage) and active product status. Both are ROHS3 compliant with MSL 1 rating.

Frequently Asked Questions (FAQ)

Q: Can I use DF08S-E3/77 as a direct replacement for DF08S/27?

A: Yes. The DF08S-E3/77 is a parametric equivalent with identical electrical specifications: 800 V peak reverse voltage, 1 A average rectified current, 1.1 V forward voltage @ 1 A, and 5 µA reverse leakage @ 800 V. Both feature 4-SMD Gull Wing packaging and operate across -55°C to 150°C. The primary difference is packaging format (Cut Tape & Digi-Reel vs. the original unspecified format) and active product status.

Q: What is the difference between DF08S-E3/45, DF08S-E3/77, and DF08S-E3/I?

A: These three parts are electrically identical variants of the DF08S-E3 series, differing only in packaging format. DF08S-E3/45 is supplied in Tube format, DF08S-E3/77 in Cut Tape & Digi-Reel format, and DF08S-E3/I in Tape & Reel format. Selection depends on your assembly process and inventory management requirements.

Q: Can I substitute DF1508S-G for DF08S/27?

A: DF1508S-G is electrically compatible with higher current capacity (1.5 A vs. 1 A). It maintains 800 V peak reverse voltage and 1.1 V forward voltage specifications. This substitution is acceptable for applications where the higher current rating does not create thermal or design conflicts. Both parts are ROHS3 compliant and operate across -55°C to 150°C.

Q: Why does DF08S from onsemi show higher reverse leakage (10 µA vs. 5 µA)?

A: The onsemi DF08S has different electrical characteristics than the original DF08S/27, including higher reverse leakage current and increased average rectified current (1.5 A). This part is classified as Not For New Designs and should be used only for legacy system maintenance where these parameter variations are acceptable.

Q: Are ABS8-HF and ABS8U true equivalents?

A: Yes. Both ABS8-HF (Comchip Technology) and ABS8U (SMC Diode Solutions) provide parametric equivalence with 800 V peak reverse voltage, 1 A average rectified current, 1.1 V forward voltage, and 5 µA reverse leakage. Both are active products with ROHS3 compliance and MSL 1 rating. The primary difference is manufacturer and packaging format availability.

Q: What is the significance of the temperature range difference in DF08S-T (-65°C vs. -55°C)?

A: The Diodes Incorporated DF08S-T extends the lower operating temperature limit to -65°C, providing a wider operating range than the original DF08S/27 (-55°C). This extended range is beneficial for applications requiring operation in extreme cold environments. All other electrical specifications remain compatible.

Q: Can I mix different substitute parts in the same assembly?

A: Mixing substitute parts is not recommended within a single assembly unless the design explicitly accounts for parameter variations. Maintain consistency with a single part number to ensure uniform electrical behavior, thermal characteristics, and reliability across all units.

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