DBD10G-E Bridge Rectifier Equivalent & Substitute Parts

Part Overview

The DBD10G-E is a single-phase bridge rectifier manufactured by onsemi, rated for 600 V peak reverse voltage and 1 A average rectified current. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Bridge rectifiers in this voltage and current class are fundamental components in AC-to-DC conversion applications requiring through-hole mounting in 4-DIP packaging.

Substiute Parts

DBD10G-E
onsemiIn Stock: 1062DBD10G-E Datasheet
DBD10G-E
Current Part
DF06M
onsemiIn Stock: 24393DF06M Datasheet
DF06M
Direct
CBR1-D060 PBFREE
Central Semiconductor CorpIn Stock: 5057CBR1-D060 PBFREE Datasheet
CBR1-D060 PBFREE
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Key Parameters

Parameter Value
Voltage - Peak Reverse (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 500 mA
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Diode Type Single Phase
Technology Standard

Substitute Part Grouping Explanation

Substitute parts for the DBD10G-E are qualified based on the following electrical and mechanical parameters:

  • Voltage - Peak Reverse (Max): 600 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Diode Type: Single Phase
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP or 4-EDIP (0.300", 7.62mm)

Parts meeting these criteria maintain functional compatibility in applications designed for the DBD10G-E. Variations in forward voltage, reverse leakage current, and operating temperature range do not preclude substitution when the primary electrical ratings are satisfied.

Parameter Comparison

Parameter DBD10G-E DF06M CBR1-D060 PBFREE
Manufacturer onsemi onsemi Central Semiconductor Corp
Voltage - Peak Reverse (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 1 A 1.5 A 1 A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 500 mA 1.1 V @ 1 A 1.1 V @ 1 A
Current - Reverse Leakage @ Vr 10 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-EDIP (0.300", 7.62mm) 4-EDIP (0.300", 7.62mm)
Product Status Obsolete Obsolete Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

DF06M (onsemi): This part maintains the same 600 V / 1.5 A rating with identical manufacturer origin. The higher current rating (1.5 A vs. 1 A) provides design margin in applications operating near the DBD10G-E current limit. Forward voltage is marginally higher (1.1 V vs. 1.05 V), and reverse leakage is lower (5 µA vs. 10 µA). Extended operating temperature range (-55°C to 150°C) accommodates broader environmental conditions. Product status is obsolete; ROHS3 compliance is confirmed.

CBR1-D060 PBFREE (Central Semiconductor Corp): This part matches the DBD10G-E electrical specifications exactly (600 V, 1 A, 10 µA reverse leakage). Product status is active, ensuring continued availability and manufacturing support. Extended operating temperature range (-65°C to 150°C) exceeds the DBD10G-E specification. ROHS3 compliance and lead-free construction are confirmed. The 4-EDIP package is mechanically compatible with 4-DIP footprints in through-hole applications.

Selection between DF06M and CBR1-D060 PBFREE depends on procurement priority: DF06M offers higher current capacity and same-manufacturer continuity; CBR1-D060 PBFREE provides active product status and exact electrical matching.

Frequently Asked Questions (FAQ)

Q: Can DF06M replace DBD10G-E in all applications? A: Yes. DF06M meets or exceeds all critical parameters: 600 V peak reverse voltage, 1.5 A average rectified current (exceeds 1 A requirement), and compatible 4-EDIP through-hole package. The higher current rating and lower reverse leakage provide design margin.

Q: Is CBR1-D060 PBFREE electrically identical to DBD10G-E? A: Yes. CBR1-D060 PBFREE matches the DBD10G-E specification exactly: 600 V peak reverse voltage, 1 A average rectified current, 10 µA reverse leakage current, and 150°C maximum junction temperature. The extended temperature range (-65°C to 150°C) provides additional environmental capability.

Q: Are 4-DIP and 4-EDIP packages interchangeable? A: Yes, for through-hole PCB applications. Both packages use 0.300" (7.62 mm) lead spacing and fit standard 4-pin DIP footprints. 4-EDIP is an enhanced variant with improved lead integrity.

Q: Why is DBD10G-E obsolete? A: The DBD10G-E is classified as obsolete by onsemi. CBR1-D060 PBFREE (active status) or DF06M provide continuity for new designs and ongoing production support.

Q: What is the impact of forward voltage differences? A: DBD10G-E specifies 1.05 V @ 500 mA; both substitutes specify 1.1 V @ 1 A. The 0.05 V difference is negligible in most rectifier applications and does not affect circuit functionality in standard AC-to-DC conversion designs.

Q: Does lead-free construction (PBFREE) affect compatibility? A: No. Lead-free solder and construction are compatible with standard PCB assembly processes. CBR1-D060 PBFREE is ROHS3 compliant and suitable for all modern manufacturing environments.

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