Equivalent & Substitute Parts for D44H8

Part Overview

The D44H8 is an NPN Bipolar Junction Transistor (BJT) manufactured by onsemi, rated for 60V collector-emitter breakdown voltage and 10A maximum collector current in a TO-220 through-hole package. This transistor is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Active alternatives with comparable or enhanced electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	10	A
Power - Max	2	W
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 4A, 1V	—
Frequency - Transition	50	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the D44H8 is determined by strict equivalence or enhancement across the following critical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (required match)
Package / Case: TO-220-3 (required match for mechanical compatibility)
Mounting Type: Through Hole (required match)
Voltage - Collector Emitter Breakdown (Max): ≥60V (equal or higher acceptable)
Current - Collector (Ic) (Max): ≥10A (equal or higher acceptable)
Power - Max: ≥2W (equal or higher acceptable)
Vce Saturation: ≤1V @ 400mA, 8A (lower or equal acceptable for improved performance)
DC Current Gain (hFE): ≥40 @ 4A, 1V (equal or higher acceptable)

Substitute parts are grouped into three categories based on their relationship to the D44H8:

Direct Equivalent (Same Base Product): D44H8G — identical electrical specifications with active product status and RoHS3 compliance
Similar Substitute (Enhanced Current Rating): 2N6487G — higher current capability (15A) with same voltage rating
Similar Substitute (Lower Specifications): 2N6290 PBFREE — reduced voltage (50V) and current (7A) ratings
Upgrade Substitute (Enhanced Power Rating): D44H8 (STMicroelectronics) — same electrical specifications with significantly higher power dissipation capability (50W)

Parameter Comparison

Parameter	D44H8 (onsemi)	D44H8G (onsemi)	2N6487G (onsemi)	2N6290 PBFREE (Central Semiconductor)	D44H8 (STMicroelectronics)
Product Status	Obsolete	Active	Active	Obsolete	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	60V	60V	60V	50V	60V
Current - Collector (Ic) (Max)	10A	10A	15A	7A	10A
Power - Max	2W	2W	1.8W	40W	50W
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	1V @ 400mA, 8A	3.5V @ 5A, 15A	3.5V @ 3A, 7A	1V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 4A, 1V	40 @ 4A, 1V	20 @ 5A, 4V	30 @ 2.5A, 4V	40 @ 4A, 1V
Frequency - Transition	50MHz	50MHz	5MHz	4MHz	—
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-65 to 150°C	-65 to 150°C	—
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: D44H8G (onsemi)

The D44H8G is the direct equivalent of the D44H8 with identical electrical specifications. This part maintains 60V breakdown voltage, 10A collector current, 2W power dissipation, 50MHz transition frequency, and matching saturation characteristics. The D44H8G is classified as active product status with ROHS3 compliance, providing long-term availability and regulatory alignment. This substitution requires no circuit redesign and is suitable for direct replacement in existing designs.

Secondary Recommendation: D44H8 (STMicroelectronics)

The STMicroelectronics D44H8 provides identical electrical specifications to the original part with significantly enhanced power dissipation capability (50W versus 2W). This substitution is appropriate for applications requiring improved thermal performance or higher power handling. The part maintains the same voltage, current, and saturation characteristics while offering superior thermal management in TO-220 packaging. ROHS3 compliance is confirmed.

Alternative Consideration: 2N6487G (onsemi)

The 2N6487G offers higher collector current capability (15A versus 10A) at the same 60V breakdown voltage. This part is suitable for applications requiring increased current headroom. However, the transition frequency is reduced to 5MHz, and Vce saturation is higher (3.5V @ 5A, 15A), indicating different switching characteristics. The DC current gain is also lower (20 @ 5A, 4V). This substitution is appropriate only when higher current capacity is required and frequency performance is not critical.

Not Recommended: 2N6290 PBFREE (Central Semiconductor)

The 2N6290 PBFREE has reduced voltage rating (50V versus 60V) and lower current capability (7A versus 10A), making it unsuitable as a direct substitute. This part is also classified as obsolete. Substitution with this part requires circuit re-evaluation and is not recommended for applications designed for the D44H8 specifications.

Frequently Asked Questions (FAQ)

Q: Can D44H8G be used as a direct replacement for D44H8?

A: Yes. The D44H8G is a direct equivalent with identical electrical specifications: 60V breakdown voltage, 10A collector current, 2W power dissipation, 50MHz transition frequency, and matching Vce saturation and DC current gain characteristics. The D44H8G is active product status with ROHS3 compliance, making it the preferred replacement for obsolete D44H8 units.

Q: What is the difference between D44H8 and D44H8G?

A: Both parts share identical electrical specifications and base product number (D44H8). The primary difference is product status: D44H8 is obsolete, while D44H8G is active. Additionally, D44H8G is packaged in tubes with ROHS3 compliance, whereas the original D44H8 is RoHS non-compliant. Electrical performance is equivalent.

Q: Can 2N6487G replace D44H8 in all applications?

A: 2N6487G is not a direct equivalent. While it maintains the same 60V breakdown voltage, it has higher collector current (15A), lower transition frequency (5MHz versus 50MHz), higher Vce saturation (3.5V @ 5A, 15A), and lower DC current gain (20 @ 5A, 4V). Substitution is appropriate only for applications where higher current capacity is required and frequency performance is not critical. Circuit re-evaluation is necessary.

Q: Why is the STMicroelectronics D44H8 listed as an upgrade?

A: The STMicroelectronics D44H8 maintains identical electrical specifications to the original part but offers significantly enhanced power dissipation capability (50W versus 2W). This allows improved thermal performance in the same TO-220-3 package. The upgrade is suitable for applications requiring higher power handling without circuit redesign.

Q: Are all substitute parts available in TO-220-3 packaging?

A: Yes. All listed substitute parts are packaged in TO-220-3 through-hole configuration, ensuring mechanical compatibility with existing PCB designs and socket configurations.

Q: What is the impact of lower transition frequency in 2N6487G?

A: The 2N6487G has a transition frequency of 5MHz compared to 50MHz in the D44H8. This indicates reduced high-frequency performance and slower switching capability. Applications requiring fast switching or operation at higher frequencies should not use 2N6487G as a substitute.

Q: Is 2N6290 PBFREE suitable as a substitute?

A: No. The 2N6290 PBFREE has reduced voltage rating (50V versus 60V) and lower current capability (7A versus 10A). Additionally, it is classified as obsolete. This part does not meet the electrical requirements of the D44H8 and is not recommended for substitution.

Q: What compliance certifications should I verify for new designs?

A: All active substitute parts (D44H8G, 2N6487G, and STMicroelectronics D44H8) are ROHS3 compliant and REACH unaffected. These certifications ensure regulatory compliance for new product designs and procurement in regulated markets.

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