CPH6444-TL-E N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The CPH6444-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with a continuous drain current of 4.5A at 25°C. This device is designed for surface mount applications in the SOT-23-6 package and is classified as Active product status with full RoHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter tolerances.

Substiute Parts

CPH6444-TL-E
onsemiIn Stock: 4804CPH6444-TL-E Datasheet
CPH6444-TL-E
Current Part
ZXMN6A08E6TA
Diodes IncorporatedIn Stock: 18576ZXMN6A08E6TA Datasheet
ZXMN6A08E6TA
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 4.5 A
Rds On (Max) @ Id, Vgs 78 mOhm @ 2A, 10V mOhm
Gate Charge (Qg) @ Vgs 10 nC @ 10V
Input Capacitance (Ciss) @ Vds 505 pF @ 20V
Power Dissipation (Max) 1.6 W
Operating Temperature (TJ) 150 °C
Package Type SOT-23-6
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the CPH6444-TL-E is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
  • FET Type: N-Channel topology required
  • Technology: MOSFET (Metal Oxide) construction
  • Gate Voltage Range (Vgs Max): ±20V compatibility
  • Package/Case: SOT-23-6 form factor

Performance Considerations:

  • Continuous Drain Current (Id): Substitute must support minimum application requirements
  • On-Resistance (Rds On): Lower values indicate improved performance; higher values acceptable if within application limits
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Affects gate drive requirements
  • Power Dissipation: Must not exceed thermal design constraints

Compliance & Certification:

  • RoHS3 Compliant status required
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) preferred
  • REACH Unaffected status required
  • Active product status ensures supply continuity

The ZXMN6A08E6TA by Diodes Incorporated qualifies as a substitute based on matching Vdss (60V), N-Channel topology, MOSFET technology, SOT-23-6 package compatibility, and full compliance certifications. Current rating differences (2.8A vs. 4.5A) and gate charge variations (5.8 nC vs. 10 nC) require application-level verification for suitability.

Parameter Comparison

Parameter CPH6444-TL-E (onsemi) ZXMN6A08E6TA (Diodes Inc.) Unit
Manufacturer onsemi Diodes Incorporated
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 60 V
Continuous Drain Current (Id) @ 25°C 4.5 2.8 A
Rds On (Max) @ Id, Vgs 78 mOhm @ 2A, 10V 80 mOhm @ 4.8A, 10V mOhm
Gate Charge (Qg) @ Vgs 10 5.8 nC @ 10V
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) @ Vds 505 pF @ 20V 459 pF @ 40V pF
Power Dissipation (Max) 1.6 1.1 W
Operating Temperature (TJ) 150 -55 to 150 °C
Package / Case SOT-23-6 SOT-23-6
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active

Engineering Selection Recommendations

Primary Selection (CPH6444-TL-E): The CPH6444-TL-E is the specified component for designs requiring 4.5A continuous drain current capability. This device maintains Active product status with established supply availability and full RoHS3 compliance. Selection is appropriate for applications where the higher current rating and gate charge specification (10 nC) align with circuit requirements.

Substitute Selection (ZXMN6A08E6TA): The ZXMN6A08E6TA qualifies as a substitute for applications where continuous drain current requirements do not exceed 2.8A. This device offers lower gate charge (5.8 nC), reducing switching losses in gate-drive-limited circuits. Both devices share identical Vdss (60V), package form factor (SOT-23-6), and compliance certifications (RoHS3, REACH Unaffected, MSL 1). The extended operating temperature range (-55°C to 150°C) of the ZXMN6A08E6TA provides additional thermal margin in low-temperature applications.

Compliance Verification: Both devices maintain Active product status, ensuring long-term supply continuity. RoHS3 compliance and REACH Unaffected status are identical across both parts, supporting regulatory requirements in industrial and consumer applications. Moisture Sensitivity Level 1 (Unlimited) classification eliminates moisture-related handling constraints for both devices.

Frequently Asked Questions (FAQ)

Q: Can the ZXMN6A08E6TA directly replace the CPH6444-TL-E in all applications?

A: Direct replacement is limited by continuous drain current rating. The ZXMN6A08E6TA is rated for 2.8A continuous drain current, compared to 4.5A for the CPH6444-TL-E. Substitution is valid only when application current requirements do not exceed 2.8A at 25°C. Both devices share identical Vdss (60V), package type (SOT-23-6), and compliance certifications.

Q: What are the key electrical differences between these two MOSFETs?

A: The primary differences are continuous drain current (CPH6444-TL-E: 4.5A vs. ZXMN6A08E6TA: 2.8A), gate charge (CPH6444-TL-E: 10 nC vs. ZXMN6A08E6TA: 5.8 nC), and power dissipation rating (CPH6444-TL-E: 1.6W vs. ZXMN6A08E6TA: 1.1W). On-resistance values are comparable (78 mOhm vs. 80 mOhm). The ZXMN6A08E6TA offers lower gate charge, beneficial for applications with limited gate drive capability.

Q: Are both devices compatible with the same PCB footprint?

A: Yes. Both the CPH6444-TL-E and ZXMN6A08E6TA use the SOT-23-6 package, ensuring identical PCB footprint compatibility. No layout modifications are required for mechanical substitution.

Q: What is the significance of the extended temperature range in the ZXMN6A08E6TA?

A: The ZXMN6A08E6TA specifies an operating junction temperature range of -55°C to 150°C, compared to 150°C maximum for the CPH6444-TL-E. The extended lower temperature limit provides operational margin in cold-environment applications. Both devices share the same maximum junction temperature (150°C).

Q: Do both devices meet the same regulatory and compliance standards?

A: Yes. Both the CPH6444-TL-E and ZXMN6A08E6TA are RoHS3 Compliant, REACH Unaffected, and classified as Moisture Sensitivity Level 1 (Unlimited). Both maintain Active product status, ensuring supply continuity and regulatory alignment for industrial and consumer applications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The ZXMN6A08E6TA requires 5.8 nC compared to 10 nC for the CPH6444-TL-E. Lower gate charge reduces switching losses and gate drive power consumption, benefiting applications with limited gate drive current or high switching frequency requirements.

Q: What factors should determine which device to select?

A: Selection is based on application current requirements, gate drive capability, and thermal constraints. If continuous drain current exceeds 2.8A, the CPH6444-TL-E is required. If current requirements are below 2.8A and lower switching losses are beneficial, the ZXMN6A08E6TA is suitable. Both devices are electrically and mechanically compatible within their respective current ratings and share identical compliance certifications.

Request Quote (Ships tomorrow)