CNW11AV2 Optoisolator Equivalent & Substitute Parts

Part Overview

The CNW11AV2 is an optoisolator transistor with base output manufactured by onsemi, rated for 4000Vrms isolation voltage in a 6-DIP through-hole package. This component is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. The CNW11AV2 provides galvanic isolation with a single channel transistor output configuration suitable for DC input applications requiring 100mA output current capability.

Substiute Parts

CNW11AV2
onsemiIn Stock: 1024CNW11AV2 Datasheet
CNW11AV2
Current Part
CNY172M
onsemiIn Stock: 18084CNY172M Datasheet
CNY172M
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4N35
onsemiIn Stock: 979644N35 Datasheet
4N35
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4N37
Vishay Semiconductor Opto DivisionIn Stock: 190924N37 Datasheet
4N37
Similar

Key Parameters

Parameter CNW11AV2 Specification
Manufacturer onsemi
Category Optoisolators
Product Status Obsolete
Number of Channels 1
Voltage - Isolation 4000Vrms
Current Transfer Ratio (Min) 50% @ 10mA
Output Type Transistor with Base
Voltage - Output (Max) 70V
Current - Output / Channel 100mA
Vce Saturation (Max) 400mV
Input Type DC
Mounting Type Through Hole
Package / Case 6-DIP (0.400", 10.16mm)
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution for the CNW11AV2 is determined by the following critical parameters:

  • Isolation voltage rating (minimum 4000Vrms required)
  • Single channel configuration
  • Transistor with base output type
  • DC input capability
  • Through-hole 6-DIP package compatibility
  • Output current capability (100mA or greater)
  • Maximum output voltage (70V or greater)

The three substitute parts listed below meet these core electrical and mechanical requirements, though with variations in isolation voltage, current transfer ratio, and compliance status.

Parameter Comparison

Parameter CNW11AV2 CNY172M 4N35 4N37
Manufacturer onsemi onsemi onsemi Vishay Semiconductor Opto Division
Product Status Obsolete Active Obsolete Active
Number of Channels 1 1 1 1
Voltage - Isolation 4000Vrms 4170Vrms 5300Vrms 5000Vrms
Current Transfer Ratio (Min) 50% @ 10mA 63% @ 10mA 100% @ 10mA 100% @ 10mA
Output Type Transistor with Base Transistor with Base Transistor with Base Transistor with Base
Voltage - Output (Max) 70V 70V 30V 30V
Current - Output / Channel 100mA 50mA Not specified 50mA
Vce Saturation (Max) 400mV 400mV 300mV Not specified
Input Type DC DC DC DC
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case 6-DIP (0.400", 10.16mm) 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm)
RoHS Status RoHS non-compliant ROHS3 Compliant Not specified ROHS3 Compliant

Engineering Selection Recommendations

CNY172M (onsemi): This substitute provides equivalent isolation voltage (4170Vrms) and maintains the same maximum output voltage (70V) as the CNW11AV2. CNY172M is currently in active production status and is ROHS3 compliant, making it suitable for new designs requiring regulatory compliance. The reduced output current rating (50mA versus 100mA) and improved current transfer ratio (63% minimum) represent the primary electrical differences. Package dimensions differ slightly (0.300" versus 0.400"), requiring PCB layout verification.

4N35 (onsemi): This substitute offers higher isolation voltage (5300Vrms) and superior current transfer ratio (100% minimum) compared to the CNW11AV2. However, the maximum output voltage is reduced to 30V, which may limit applicability in higher voltage switching applications. The product status is obsolete, similar to the CNW11AV2. This part is suitable only when the 30V output voltage ceiling is acceptable for the application.

4N37 (Vishay Semiconductor Opto Division): This substitute provides 5000Vrms isolation voltage and 100% minimum current transfer ratio. The product is currently in active production and ROHS3 compliant. The maximum output voltage is limited to 30V, and output current is rated at 50mA. The 4N37 is appropriate for applications where higher isolation voltage and active product status are prioritized over maximum output voltage capability.

Frequently Asked Questions (FAQ)

Q: Can CNY172M directly replace CNW11AV2 in existing designs?

A: CNY172M meets the core isolation voltage and output voltage requirements. However, the output current rating is reduced from 100mA to 50mA, and the package body length differs (0.300" versus 0.400"). Circuit designs drawing more than 50mA output current require modification. PCB footprints must accommodate the smaller package dimension.

Q: What is the primary limitation of 4N35 and 4N37 as substitutes?

A: Both 4N35 and 4N37 have a maximum output voltage of 30V, compared to 70V for the CNW11AV2. Applications requiring switching or driving loads above 30V cannot use these substitutes without circuit redesign.

Q: Which substitute is recommended for new production designs?

A: CNY172M or 4N37 are both active products with ROHS3 compliance. CNY172M maintains the 70V output voltage capability of the original part. 4N37 offers higher isolation voltage (5000Vrms) if additional isolation margin is required. Selection depends on whether the 70V output voltage is necessary for the application.

Q: Are there package compatibility concerns with these substitutes?

A: All three substitutes use 6-DIP through-hole packages, but body dimensions vary. CNW11AV2 uses 0.400" (10.16mm) body length, while CNY172M, 4N35, and 4N37 all use 0.300" (7.62mm) body length. PCB hole spacing remains compatible, but component height and board clearance must be verified.

Q: What is the impact of reduced output current in CNY172M and 4N37?

A: Both substitutes are rated for 50mA output current versus 100mA for the CNW11AV2. Applications requiring 100mA output current cannot use these parts without external current amplification or circuit modification.

Q: How do current transfer ratios compare across these parts?

A: CNW11AV2 specifies 50% minimum CTR, CNY172M specifies 63% minimum, while both 4N35 and 4N37 specify 100% minimum. Higher CTR values indicate more efficient optical coupling and may allow reduced input current for equivalent output switching performance.

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