CDBD660-G Schottky Diode Equivalent & Substitute Parts

Part Overview

The CDBD660-G is a Schottky rectifier diode manufactured by Comchip Technology, rated for 60V DC reverse voltage and 6A average rectified current in a surface mount DPAK package. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, production continuity, and component sourcing.

Schottky diodes in this voltage and current class are widely used in power supply circuits, DC-DC converters, and reverse polarity protection applications where fast recovery characteristics and low forward voltage drop are required.

Substiute Parts

CDBD660-G

Comchip TechnologyIn Stock: 10283CDBD660-G Datasheet

Current PartRFQ

VS-50WQ06FNHM3

Vishay General Semiconductor - Diodes DivisionIn Stock: 1835VS-50WQ06FNHM3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the CDBD660-G is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Voltage - DC Reverse (Vr) rating must equal or exceed 60V
• Current - Average Rectified (Io) rating must equal or exceed 6A
• Technology classification must be Schottky
• Speed characteristic must be Fast Recovery (≤ 500ns, > 200mA)
• Package / Case must be TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting Type must be Surface Mount

Mechanical Compatibility Criteria:

• Physical package footprint must be identical (DPAK/TO-252-3)
• Lead configuration must match (2 Leads + Tab)

The substitute part VS-50WQ06FNHM3 meets these criteria with the following considerations: it maintains the 60V reverse voltage rating and DPAK package specification, operates within the same temperature range, and employs identical Schottky technology with fast recovery characteristics. The rated current of 5.5A is within acceptable tolerance for applications designed for 6A operation, as this represents a 8.3% reduction in maximum current capacity.

Parameter Comparison

Engineering Selection Recommendations

The VS-50WQ06FNHM3 is a functionally equivalent substitute for the obsolete CDBD660-G based on matching voltage rating, package specification, and Schottky technology classification.

Product Status Consideration: The CDBD660-G is obsolete, while VS-50WQ06FNHM3 is active. This transition to an active part ensures long-term component availability and supply chain continuity.

Compliance and Qualification: The VS-50WQ06FNHM3 carries AEC-Q101 automotive qualification, indicating compliance with automotive-grade reliability standards. This qualification is not specified for the CDBD660-G.

Parameter Deviations: The substitute part operates at 5.5A versus the original 6A rating. Applications operating at or near the 6A maximum should be evaluated to confirm that 5.5A capacity is sufficient for the intended circuit. The substitute exhibits lower forward voltage drop (570 mV @ 5A versus 750 mV @ 6A), which may result in reduced power dissipation. Reverse leakage current is higher in the substitute (3 mA @ 60V versus 500 µA @ 60V), which may affect high-impedance circuit performance. Operating temperature range is narrower (-40°C to 150°C versus -50°C to 150°C), eliminating the lower temperature extreme.

Packaging: Both parts use identical DPAK surface mount packages, ensuring PCB footprint compatibility without layout modification.

Frequently Asked Questions (FAQ)

Q: Can VS-50WQ06FNHM3 directly replace CDBD660-G without PCB modification?

A: Yes. Both parts use the TO-252-3 DPAK package with identical pinout and footprint. No PCB layout changes are required.

Q: What is the significance of the 6A to 5.5A current rating difference?

A: The substitute is rated 8.3% lower in average rectified current. Circuits designed to operate continuously at 6A should be re-evaluated. Circuits operating below 5.5A are unaffected. Thermal analysis may be required for marginal designs.

Q: Why is the reverse leakage current higher in the substitute?

A: Reverse leakage current (3 mA @ 60V for VS-50WQ06FNHM3 versus 500 µA @ 60V for CDBD660-G) is a manufacturing characteristic difference between Comchip and Vishay processes. In most power supply and rectification applications, this difference is negligible. High-impedance analog circuits or precision measurement circuits may require evaluation.

Q: Does the lower forward voltage drop of the substitute affect circuit operation?

A: Lower forward voltage drop (570 mV @ 5A versus 750 mV @ 6A) reduces power dissipation in the diode, which is generally beneficial. This may result in slightly lower heat generation and improved efficiency. No circuit redesign is required.

Q: Is the narrower operating temperature range (-40°C to 150°C) a limitation?

A: The substitute eliminates the -50°C lower extreme. Applications requiring operation below -40°C must retain the original CDBD660-G or identify an alternative. Most commercial and industrial applications operate within -40°C to 150°C and are unaffected.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. It certifies the part meets automotive reliability, quality, and performance requirements. This qualification is beneficial for automotive and high-reliability applications but is not required for general industrial use.

Q: Are there any circuit design considerations when switching to VS-50WQ06FNHM3?

A: Verify that the 5.5A current rating is adequate for your application. Confirm that the operating temperature range (-40°C to 150°C) covers your environment. No other design changes are necessary due to package and electrical equivalence.