BYW82-TAP Equivalent & Substitute Parts

Part Overview

The BYW82-TAP is an avalanche diode rated for 200 V DC reverse voltage and 3 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This component is packaged in SOD-64 axial configuration and is classified as Active product status. The BYW82-TAP employs avalanche technology with standard recovery characteristics, making it suitable for applications requiring reverse voltage protection and general-purpose rectification in through-hole designs.

Substitute parts become necessary when the BYW82-TAP reaches end-of-life status, when alternative packaging formats are required for manufacturing compatibility, or when inventory constraints necessitate equivalent alternatives that meet the same electrical specifications.

Substiute Parts

BYW82-TAP

Vishay General Semiconductor - Diodes DivisionIn Stock: 1260BYW82-TAP Datasheet

Current PartRFQ

1N5402G

Taiwan Semiconductor CorporationIn Stock: 21461N5402G Datasheet

MFR RecommendedRFQ

1N5402RLG

onsemiIn Stock: 37191N5402RLG Datasheet

MFR RecommendedRFQ

EGP30D

onsemiIn Stock: 25502EGP30D Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the BYW82-TAP is determined by the following critical parameters:

Primary Electrical Criteria:

• Voltage - DC Reverse (Vr) (Max): 200 V minimum
• Current - Average Rectified (Io): 3 A minimum
• Voltage - Forward (Vf) (Max) @ If: 1 V or lower @ 3 A
• Speed Classification: Standard Recovery or faster
• Operating Temperature - Junction: Must accommodate -55°C minimum

Secondary Compatibility Criteria:

• Mounting Type: Through Hole required
• Package / Case: Axial configuration required
• RoHS Status: ROHS3 Compliant required

All substitute parts listed meet or exceed the primary electrical criteria and maintain through-hole axial mounting compatibility. Variations in reverse recovery time, reverse leakage current, and capacitance are acceptable provided they do not degrade circuit performance in the intended application.

Parameter Comparison

Engineering Selection Recommendations

1N5402G (Taiwan Semiconductor Corporation)

The 1N5402G is the primary recommended substitute for the BYW82-TAP. This part maintains identical electrical specifications (200 V, 3 A, 1 V forward voltage) and standard recovery speed classification. The 1N5402G carries Active product status, indicating ongoing manufacturer support and availability. Packaging differs from the BYW82-TAP (DO-201AD versus SOD-64), but both are through-hole axial configurations with compatible footprints. The 1N5402G is supplied in Tape & Reel format with 2110 pieces in stock. ROHS3 compliance and EAR99 classification match the original part.

1N5402RLG (onsemi)

The 1N5402RLG meets all primary electrical criteria and maintains through-hole axial mounting compatibility. However, this part carries "Not For New Designs" product status, indicating onsemi has discontinued active development and support. The 1N5402RLG is suitable only for legacy system maintenance or repair applications where existing designs require exact functional equivalence. Operating temperature range extends to -65°C, providing broader low-temperature capability than the BYW82-TAP. Reverse leakage current is elevated at 10 µA compared to the original 1 µA specification.

EGP30D (onsemi)

The EGP30D qualifies as a substitute based on electrical parameter equivalence (200 V, 3 A) and through-hole axial packaging. This part features fast recovery characteristics (≤500ns, 50 ns trr) compared to the BYW82-TAP standard recovery profile, resulting in lower forward voltage (950 mV versus 1 V). The EGP30D carries "Not For New Designs" status and is not recommended for new circuit implementations. Highest inventory availability (25400 pieces) makes this option suitable for high-volume legacy applications. Operating temperature range is -65°C to 150°C.

Recommendation for New Designs: Use 1N5402G as the primary substitute. This part maintains Active status, ensures manufacturer support, and provides identical electrical performance with compatible through-hole axial packaging.

Recommendation for Legacy Applications: 1N5402RLG or EGP30D are acceptable for maintenance and repair of existing systems where design changes are not feasible.

Frequently Asked Questions (FAQ)

Q: Can the 1N5402G directly replace the BYW82-TAP without circuit modification?

A: Yes. The 1N5402G maintains identical voltage rating (200 V), current rating (3 A), forward voltage (1 V @ 3 A), and speed classification (standard recovery). Both parts are through-hole axial diodes. Package dimensions differ slightly (DO-201AD versus SOD-64), but both fit standard through-hole PCB layouts. No circuit modification is required.

Q: What is the difference between SOD-64 and DO-201AD packaging?

A: SOD-64 and DO-201AD are both through-hole axial diode packages with similar form factors. SOD-64 is Vishay's designation; DO-201AD is the industry standard designation used by Taiwan Semiconductor Corporation and other manufacturers. Both packages accommodate standard 0.3-inch lead spacing on PCBs. Physical dimensions are comparable, allowing direct mechanical substitution.

Q: Why does the EGP30D have faster recovery time than the BYW82-TAP?

A: The EGP30D employs fast recovery technology (50 ns trr) compared to the BYW82-TAP standard recovery profile (7.5 µs trr). This difference reflects different semiconductor manufacturing processes. Fast recovery diodes exhibit lower reverse recovery charge, reducing switching losses in high-frequency applications. For standard rectification circuits, this difference is not critical.

Q: Is the 1N5402RLG suitable for new product designs?

A: No. The 1N5402RLG carries "Not For New Designs" product status from onsemi, indicating the manufacturer has discontinued active support and development. This part is reserved for maintenance of existing legacy systems. For new designs, use the 1N5402G, which maintains Active status.

Q: What does "Standard Recovery >500ns, > 200mA (Io)" mean?

A: This specification indicates the diode exhibits reverse recovery time greater than 500 nanoseconds when switching at currents exceeding 200 milliamps. Standard recovery diodes are suitable for low-frequency and DC rectification applications. Fast recovery diodes (≤500ns) are preferred for high-frequency switching circuits where minimizing reverse recovery losses is critical.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The BYW82-TAP and all listed substitute parts (1N5402G, 1N5402RLG, EGP30D) are ROHS3 compliant. All parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current represents the small DC current flowing through the diode when reverse biased. The BYW82-TAP specifies 1 µA @ 200 V, while substitutes range from 5 µA to 10 µA. For most rectification applications, these differences are negligible. In precision analog circuits or high-impedance applications, lower leakage current may be preferred; however, all values remain within acceptable ranges for standard power supply and protection circuits.

Q: Can the EGP30D be used in applications requiring standard recovery characteristics?

A: Yes. Although the EGP30D features fast recovery technology, it remains fully functional in standard recovery applications. Fast recovery diodes are backward compatible with standard recovery requirements. The faster switching characteristics provide no disadvantage in low-frequency rectification circuits; they simply offer additional performance margin in high-frequency applications.

Q: What is the operating temperature range difference between parts?

A: The BYW82-TAP operates from -55°C to 175°C. The 1N5402G operates from -55°C to 150°C. The 1N5402RLG and EGP30D both operate from -65°C to 150°C. For applications requiring operation above 150°C, the BYW82-TAP is the only suitable option. For standard industrial applications (-40°C to 85°C ambient), all parts are equivalent.