BS170P N-Channel MOSFET 60V 270mA TO-92 Equivalent & Substitute Parts

Part Overview

The BS170P is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 270mA continuous drain current at 25°C. This device is packaged in a TO-92-3 through-hole configuration and is designed for general-purpose switching and amplification applications in low-power circuits. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified based on matching or exceeding electrical performance within the same package family, enabling direct replacement or circuit optimization where enhanced specifications are beneficial.

Substiute Parts

BS170P
Diodes IncorporatedIn Stock: 35261BS170P Datasheet
BS170P
Current Part
VN0808L-G
Microchip TechnologyIn Stock: 1616VN0808L-G Datasheet
VN0808L-G
MFR Recommended
VN10KN3-G-P002
Microchip TechnologyIn Stock: 4646VN10KN3-G-P002 Datasheet
VN10KN3-G-P002
MFR Recommended

Key Parameters

Parameter BS170P Specification
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 270 mA
On-State Resistance (Rds On) @ 10V, 200mA 5 Ω
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA 3 V
Gate-Source Voltage (Vgs) Maximum ±20 V
Input Capacitance (Ciss) @ 10V 60 pF
Power Dissipation (Max) 625 mW
Operating Temperature Range -55°C to 150°C
Package Type TO-92-3 (TO-226AA)
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitute parts for the BS170P are qualified based on the following substitution criteria:

Primary Substitution Criteria:

  • N-Channel MOSFET technology (Metal Oxide)
  • TO-92-3 through-hole package compatibility
  • Drain-to-source voltage rating equal to or greater than 60V
  • Continuous drain current rating equal to or greater than 270mA
  • Operating temperature range encompassing -55°C to 150°C
  • RoHS3 compliance and unlimited moisture sensitivity (MSL 1)

Acceptable Parameter Variations:

  • On-state resistance (Rds On) at 10V: Equal to or lower than 5Ω indicates improved performance
  • Gate-source threshold voltage: Lower values indicate faster switching response
  • Gate-source voltage rating: Equal to or greater than ±20V provides design flexibility
  • Input capacitance: Lower values reduce gate drive requirements
  • Power dissipation: Higher ratings provide thermal margin

The substitute parts identified—VN0808L-G and VN10KN3-G-P002—meet or exceed all primary criteria and are manufactured by Microchip Technology with equivalent compliance certifications.

Parameter Comparison

Parameter BS170P (Diodes Inc.) VN0808L-G (Microchip) VN10KN3-G-P002 (Microchip)
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 60 V 80 V 60 V
Continuous Drain Current (Id) @ 25°C 270 mA 300 mA 310 mA
On-State Resistance (Rds On) @ 10V 5 Ω @ 200mA 4 Ω @ 1A 5 Ω @ 500mA
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA 3 V 2 V 2.5 V
Gate-Source Voltage (Vgs) Maximum ±20 V ±30 V ±30 V
Input Capacitance (Ciss) @ Vds 60 pF @ 10V 50 pF @ 25V 60 pF @ 25V
Power Dissipation (Max) 625 mW 1 W 1 W
Operating Temperature Range -55°C to 150°C -55°C to 150°C -55°C to 150°C
Package Type TO-92-3 TO-92-3 TO-92-3
Mounting Type Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

BS170P Direct Replacement: The BS170P remains the optimal choice for applications with strict voltage and current specifications at 60V and 270mA respectively. All three parts maintain Active product status with full RoHS3 compliance and REACH unaffected designation, ensuring regulatory compliance across all options.

VN0808L-G Selection: The VN0808L-G from Microchip Technology provides an 80V voltage rating, exceeding the BS170P by 20V. This substitute is suitable for applications requiring higher voltage headroom or operating in circuits with transient overvoltage conditions. The 300mA current rating and 1W power dissipation provide enhanced thermal performance. Lower gate-source threshold voltage (2V versus 3V) enables faster switching transitions. This part is appropriate for designs where voltage margin and thermal capacity are prioritized.

VN10KN3-G-P002 Selection: The VN10KN3-G-P002 maintains the 60V voltage rating of the BS170P while offering 310mA continuous drain current and 1W power dissipation. This substitute provides the closest electrical alignment to the original part with improved current handling and thermal margin. The lower gate-source threshold voltage (2.5V) and higher gate-source voltage rating (±30V) offer enhanced gate drive flexibility. This part is appropriate for direct substitution where improved performance margins are desired without voltage rating changes.

All three parts are Active products with unlimited moisture sensitivity and full compliance certifications, enabling selection based on circuit requirements rather than availability or regulatory constraints.

Frequently Asked Questions (FAQ)

Q: Can VN0808L-G be used as a direct replacement for BS170P in all applications?

A: VN0808L-G is electrically compatible for direct substitution in circuits designed for 60V operation. The higher 80V rating provides additional voltage margin without affecting performance at 60V. However, verify that the circuit design does not depend on the specific gate-source threshold voltage of 3V; VN0808L-G operates at 2V threshold, which may affect switching timing in precision circuits.

Q: What is the primary difference between VN0808L-G and VN10KN3-G-P002?

A: VN0808L-G is rated for 80V drain-to-source voltage, while VN10KN3-G-P002 maintains the 60V rating of the BS170P. Both offer improved current handling (300mA and 310mA respectively) and higher power dissipation (1W each) compared to the BS170P. VN10KN3-G-P002 provides closer electrical alignment to the original part specifications.

Q: Are all three parts available in the same packaging?

A: Yes. BS170P, VN0808L-G, and VN10KN3-G-P002 are all packaged in TO-92-3 (TO-226AA) through-hole configuration, enabling direct physical substitution on printed circuit boards without layout modifications.

Q: Do the substitute parts have the same compliance certifications as BS170P?

A: Yes. All three parts are RoHS3 compliant, REACH unaffected, and carry unlimited moisture sensitivity rating (MSL 1). Regulatory compliance is equivalent across all options.

Q: Which substitute part should be selected for improved thermal performance?

A: Both VN0808L-G and VN10KN3-G-P002 offer 1W power dissipation compared to BS170P at 625mW, providing 60% additional thermal capacity. Selection between these two depends on voltage requirements: VN0808L-G for 80V applications, VN10KN3-G-P002 for 60V applications.

Q: How do gate-source threshold voltage differences affect circuit operation?

A: BS170P operates at 3V threshold, while both substitutes operate at lower thresholds (2V for VN0808L-G, 2.5V for VN10KN3-G-P002). Lower threshold voltages enable switching at lower gate drive voltages, potentially improving switching speed. Circuits with fixed gate drive voltages will experience faster turn-on transitions with substitute parts.

Q: Are there any package or lead configuration differences between these parts?

A: VN10KN3-G-P002 is specified with formed leads in TO-92-3 package, while BS170P and VN0808L-G are standard TO-92-3 configuration. Formed leads provide improved mechanical retention in automated assembly processes but do not affect electrical performance or basic physical compatibility.

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