BFP 620F E7764 Equivalent & Substitute Parts

Part Overview

The BFP 620F E7764 is an RF transistor manufactured by Infineon Technologies, classified as an NPN bipolar junction transistor (BJT) designed for high-frequency applications. This component operates at a transition frequency of 65GHz with a maximum collector-emitter breakdown voltage of 2.8V and maximum power dissipation of 185mW. The part is currently listed as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and component procurement.

Substiute Parts

BFP 620F E7764
Infineon TechnologiesIn Stock: 772BFP 620F E7764 Datasheet
BFP 620F E7764
Current Part
2SC5347AE-TD-E
onsemiIn Stock: 41392SC5347AE-TD-E Datasheet
2SC5347AE-TD-E
MFR Recommended
SMMBTH10-4LT3G
onsemiIn Stock: 1081SMMBTH10-4LT3G Datasheet
SMMBTH10-4LT3G
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number BFP 620F E7764
Manufacturer Infineon Technologies
Category Transistors, Bipolar (BJT)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 2.8V
Frequency - Transition 65GHz
Noise Figure (dB Typ @ f) 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain 21dB
Power - Max 185mW
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 50mA, 1.5V
Current - Collector (Ic) (Max) 80mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads (4-TSFP)
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution of the BFP 620F E7764 is constrained by its specialized RF performance characteristics. The primary substitution criteria are based on the following allowed electrical and mechanical parameters:

Critical Substitution Parameters:

  • Transistor Type: NPN configuration
  • Mounting Type: Surface Mount compatibility
  • Operating Temperature Range: Maximum junction temperature of 150°C
  • Regulatory Compliance: REACH Unaffected status and ECCN EAR99 classification

Performance-Based Constraints: The BFP 620F E7764 operates at 65GHz transition frequency with low noise figure (0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz) and high gain (21dB). Substitute parts must maintain NPN topology and surface mount packaging. However, substitute parts may operate at different frequency ranges, voltage ratings, power levels, and current specifications depending on the application requirements.

Identified Substitutes:

  1. 2SC5347AE-TD-E (onsemi) – Manufacturer-recommended substitute with different electrical specifications (12V breakdown voltage, 4.7GHz frequency, 1.3W power)

  2. SMMBTH10-4LT3G (onsemi) – Active product substitute with SOT-23-3 packaging (25V breakdown voltage, 800MHz frequency, 225mW power)

Parameter Comparison

Parameter BFP 620F E7764 (Main) 2SC5347AE-TD-E (Substitute) SMMBTH10-4LT3G (Substitute)
Manufacturer Infineon Technologies onsemi onsemi
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.8V 12V 25V
Frequency - Transition 65GHz 4.7GHz 800MHz
Power - Max 185mW 1.3W 225mW
DC Current Gain (hFE) (Min) 110 @ 50mA, 1.5V 90 @ 50mA, 5V 120 @ 4mA, 10V
Current - Collector (Ic) (Max) 80mA 150mA Not specified
Operating Temperature (TJ) 150°C 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads (4-TSFP) TO-243AA (PCP) TO-236-3, SC-59, SOT-23-3
Product Status Obsolete Obsolete Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99

Engineering Selection Recommendations

For 2SC5347AE-TD-E (onsemi):

This part is listed as manufacturer-recommended but carries obsolete product status. It provides higher voltage rating (12V vs. 2.8V) and significantly higher power dissipation capability (1.3W vs. 185mW). However, it operates at substantially lower frequency (4.7GHz vs. 65GHz) and lower gain (8dB vs. 21dB). Selection of this substitute is appropriate only when application frequency requirements are below 4.7GHz and higher voltage/power handling is beneficial. The part maintains REACH Unaffected and EAR99 compliance status.

For SMMBTH10-4LT3G (onsemi):

This part holds active product status, providing long-term availability assurance. It features the highest voltage rating (25V) and widest operating temperature range (-55°C ~ 150°C). However, it operates at the lowest frequency (800MHz) and lowest power rating (225mW). This substitute is suitable for lower-frequency RF applications where component longevity and extended temperature operation are required. ROHS3 compliance and active status provide regulatory and supply chain advantages.

Selection Criteria:

  • Choose 2SC5347AE-TD-E when frequency operation between 4.7GHz and 65GHz is acceptable and higher power handling is needed
  • Choose SMMBTH10-4LT3G when frequency operation is below 800MHz and long-term component availability is critical
  • Verify circuit impedance matching and biasing networks are compatible with selected substitute parameters

Frequently Asked Questions (FAQ)

Q: Can the BFP 620F E7764 be directly replaced with either substitute part?

A: Direct replacement depends on application frequency requirements. The BFP 620F E7764 operates at 65GHz. The 2SC5347AE-TD-E operates at 4.7GHz, and the SMMBTH10-4LT3G operates at 800MHz. Substitution is only valid when the application frequency is within or below the substitute part's transition frequency specification.

Q: What are the key differences between the two substitute parts?

A: The 2SC5347AE-TD-E provides intermediate frequency operation (4.7GHz) with higher power capability (1.3W) and moderate voltage rating (12V). The SMMBTH10-4LT3G provides the lowest frequency operation (800MHz) with the highest voltage rating (25V) and active product status. Package types also differ: 2SC5347AE-TD-E uses TO-243AA (PCP), while SMMBTH10-4LT3G uses SOT-23-3.

Q: Why is product status important in selecting a substitute?

A: The BFP 620F E7764 and 2SC5347AE-TD-E are both obsolete, indicating limited future availability. The SMMBTH10-4LT3G maintains active status, ensuring continued manufacturing and supply chain support. For new designs or long-term production, active-status parts are preferred.

Q: Are there packaging compatibility considerations?

A: Yes. The BFP 620F E7764 uses 4-TSFP packaging (4-SMD, Flat Leads). The 2SC5347AE-TD-E uses TO-243AA (PCP) packaging, and the SMMBTH10-4LT3G uses SOT-23-3 packaging. PCB layout, footprint design, and thermal management must be re-evaluated for each substitute due to different package geometries.

Q: Do all parts meet the same regulatory requirements?

A: All three parts maintain REACH Unaffected status and EAR99 ECCN classification. The 2SC5347AE-TD-E and SMMBTH10-4LT3G are ROHS3 compliant, while the main part does not specify RoHS status. All parts have MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the impact of voltage rating differences on substitution?

A: The BFP 620F E7764 has a 2.8V maximum collector-emitter breakdown voltage, the lowest of the three parts. Substitutes with higher voltage ratings (12V or 25V) can operate in circuits designed for the original part's voltage, but circuit design must ensure bias voltages do not exceed the original specification to maintain intended performance characteristics.

Q: How do noise figure specifications affect substitution?

A: The BFP 620F E7764 specifies noise figure of 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz. The 2SC5347AE-TD-E specifies 1.8dB @ 1GHz. The SMMBTH10-4LT3G does not provide noise figure specification. For low-noise RF applications, the original part or 2SC5347AE-TD-E may be required; SMMBTH10-4LT3G is suitable for general-purpose RF applications where noise performance is less critical.

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