BFL4007 N-Channel 600V 8.7A MOSFET Equivalent & Substitute Parts

Part Overview

The BFL4007 is an N-Channel 600V 8.7A MOSFET manufactured by onsemi in a TO-220FI(LS) through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The BFL4007 is suitable for applications requiring moderate voltage and current handling in switching and amplification circuits. Substitute parts must maintain compatibility across critical electrical parameters including drain-source voltage rating, continuous drain current, on-resistance characteristics, and thermal performance specifications.

Key Parameters

Parameter	BFL4007 Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	8.7	A (Ta)
Rds On (Max) @ Id, Vgs	680	mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs	46	nC @ 10V
Vgs(th) (Max) @ Id	5	V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1200	pF @ 30V
Power Dissipation (Max)	2 (Ta), 40 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the BFL4007 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must support 8.7A or higher at rated conditions
Package Type: TO-220 family through-hole packages (TO-220F, TO-220FM, TO-220FI, TO-220SIS variants)
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 150°C or equivalent

Secondary Compatibility Parameters:

Rds On (Max): Lower values indicate improved performance; values up to approximately 840mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; range 10–87 nC acceptable
Vgs(th): Gate threshold voltage; range 3.5V–5V acceptable
Input Capacitance (Ciss): Range 320–2620 pF acceptable
Power Dissipation: Minimum 20W (Tc) required for thermal equivalence

Substitutes are grouped into two categories: Direct Current Equivalents (8–10A range) and Voltage-Elevated Alternatives (650–800V ratings). All substitute parts maintain TO-220 family packaging and through-hole mounting compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Package	Status
BFL4007	onsemi	600	8.7 (Ta)	680 @ 7A, 10V	46 @ 10V	1200 @ 30V	2 (Ta), 40 (Tc)	-55 to 150	TO-220FI(LS)	Obsolete
FCPF9N60NT	Fairchild Semiconductor	600	9 (Tc)	385 @ 4.5A, 10V	29 @ 10V	1240 @ 100V	29.8 (Tc)	-55 to 150	TO-220F-3	Active
AOTF10N60L	Alpha & Omega Semiconductor	600	10 (Tc)	750 @ 5A, 10V	40 @ 10V	1600 @ 25V	—	-55 to 150	TO-220F	Active
R6007ENX	Rohm Semiconductor	600	7 (Tc)	620 @ 2.4A, 10V	20 @ 10V	390 @ 25V	40 (Tc)	-55 to 150	TO-220FM	Active
R6007KNX	Rohm Semiconductor	600	7 (Tc)	620 @ 2.4A, 10V	14.5 @ 10V	470 @ 25V	46 (Tc)	-55 to 150	TO-220FM	Active
STF12NK80Z	STMicroelectronics	800	10.5 (Tc)	750 @ 5.25A, 10V	87 @ 10V	2620 @ 25V	40 (Tc)	-55 to 150	TO-220FP	Active
STF7NM60N	STMicroelectronics	600	5 (Tc)	900 @ 2.5A, 10V	14 @ 10V	363 @ 50V	20 (Tc)	-55 to 150	TO-220FP	Active
STF9N60M2	STMicroelectronics	600	5.5 (Tc)	780 @ 3A, 10V	10 @ 10V	320 @ 100V	20 (Tc)	-55 to 150	TO-220FP	Active
TK7A65W,S5X	Toshiba Semiconductor	650	6.8 (Ta)	780 @ 3.4A, 10V	15 @ 10V	490 @ 300V	30 (Tc)	-55 to 150	TO-220SIS	Active
TK8A65D(STA4,Q,M)	Toshiba Semiconductor	650	8 (Ta)	840 @ 4A, 10V	25 @ 10V	1350 @ 25V	45 (Tc)	-55 to 150	TO-220SIS	Active

Engineering Selection Recommendations

Direct Current Equivalents (600V, 8–10A Range):

The FCPF9N60NT (Fairchild Semiconductor) provides the closest electrical match to the BFL4007. It maintains 600V Vdss rating, delivers 9A continuous drain current, and operates across the full -55°C to 150°C temperature range. The FCPF9N60NT exhibits superior on-resistance performance (385mOhm vs. 680mOhm) and lower gate charge (29nC vs. 46nC), resulting in reduced switching losses. This part is active and widely available. The TO-220F-3 package is mechanically compatible with TO-220 family applications.

The AOTF10N60L (Alpha & Omega Semiconductor) offers 10A continuous drain current at 600V, exceeding the BFL4007 current rating. This part is active and RoHS3 compliant. The slightly elevated on-resistance (750mOhm) and higher input capacitance (1600pF) are acceptable trade-offs for increased current headroom.

Voltage-Elevated Alternatives (650–800V Range):

The TK8A65D(STA4,Q,M) (Toshiba Semiconductor) provides 650V Vdss with 8A continuous drain current, closely matching the BFL4007 current specification. This part is active, RoHS3 compliant, and delivers 45W power dissipation at Tc. The TO-220SIS package maintains through-hole compatibility.

The STF12NK80Z (STMicroelectronics) operates at 800V Vdss with 10.5A continuous drain current, providing enhanced voltage margin for applications subject to transient overvoltage. This part is active and RoHS3 compliant. The elevated gate charge (87nC) and input capacitance (2620pF) require consideration in high-frequency switching applications.

Lower Current Alternatives (5–7A Range):

The STF7NM60N and STF9N60M2 (STMicroelectronics) and R6007ENX/R6007KNX (Rohm Semiconductor) are suitable for applications where the 8.7A rating of the BFL4007 exceeds actual circuit requirements. These parts are active and RoHS3 compliant. The R6007KNX variant offers reduced gate charge (14.5nC) compared to R6007ENX (20nC), improving switching performance.

Compliance and Availability:

All recommended substitute parts are active products with current manufacturing status. FCPF9N60NT, AOTF10N60L, STF12NK80Z, STF7NM60N, STF9N60M2, R6007ENX, R6007KNX, TK8A65D(STA4,Q,M), and TK7A65W,S5X are RoHS3 compliant and REACH unaffected. All parts carry EAR99 export classification and HTSUS code 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the FCPF9N60NT directly replace the BFL4007 in existing designs?

A: The FCPF9N60NT is electrically compatible with the BFL4007 across all critical parameters: 600V Vdss, 9A continuous drain current (exceeding the 8.7A requirement), and -55°C to 150°C operating range. The TO-220F-3 package is mechanically compatible with TO-220 family footprints. Pin configuration must be verified against the specific PCB layout, as TO-220 variants may differ in lead spacing or isolation characteristics.

Q: What is the difference between the R6007ENX and R6007KNX?

A: Both parts are Rohm Semiconductor N-Channel 600V 7A MOSFETs in TO-220FM packages. The primary differences are gate charge (R6007ENX: 20nC vs. R6007KNX: 14.5nC) and power dissipation (R6007ENX: 40W vs. R6007KNX: 46W at Tc). The R6007KNX exhibits lower switching losses due to reduced gate charge, making it preferable for high-frequency applications. Both parts are active and RoHS3 compliant.

Q: Why does the STF12NK80Z have a higher Vdss rating (800V) than the BFL4007 (600V)?

A: The STF12NK80Z is rated for 800V Vdss, providing a 200V safety margin above the BFL4007's 600V specification. This elevated rating is beneficial in applications subject to transient overvoltage conditions or where design margins require additional headroom. The 800V rating does not prevent use in 600V applications; however, the higher gate charge (87nC) and input capacitance (2620pF) may increase switching losses compared to 600V-rated alternatives.

Q: Are TO-220F, TO-220FM, TO-220FI, and TO-220SIS packages interchangeable?

A: All these packages are TO-220 family through-hole devices with three leads (Gate, Drain, Source). The mechanical footprint and lead spacing are standardized across variants. However, thermal performance and isolation characteristics may differ. The TO-220FI(LS) package of the BFL4007 features isolated leads, while TO-220F, TO-220FM, and TO-220FP variants may have different thermal coupling. PCB layout and thermal management requirements should be evaluated for each substitute part.

Q: What is the significance of gate charge (Qg) in MOSFET substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., STF9N60M2 at 10nC) reduces switching losses and allows faster switching speeds, beneficial in high-frequency applications. Higher gate charge (e.g., STF12NK80Z at 87nC) increases switching losses but may provide improved noise immunity. The BFL4007 specifies 46nC; substitutes ranging from 10nC to 87nC are acceptable depending on circuit switching frequency and thermal constraints.

Q: Can I use a lower current-rated MOSFET (e.g., STF7NM60N at 5A) in place of the BFL4007 (8.7A)?

A: Lower current-rated parts are suitable only if the actual circuit current requirement does not exceed the substitute part's rating. The STF7NM60N is rated for 5A continuous drain current; using it in an 8.7A application would cause thermal runaway and device failure. Current rating selection must be based on actual circuit requirements, not the BFL4007's specification. If the circuit requires 8.7A, substitute parts must be rated for 8.7A or higher.

Q: What does "Active" product status mean compared to "Obsolete"?

A: Active status indicates the part is currently manufactured and available from the supplier. Obsolete status (as with the BFL4007) indicates the part is no longer manufactured and existing inventory is limited. All recommended substitute parts carry Active status, ensuring long-term availability and design continuity. Obsolete parts should not be selected for new designs.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all recommended substitute parts (FCPF9N60NT, AOTF10N60L, R6007ENX, R6007KNX, STF12NK80Z, STF7NM60N, STF9N60M2, TK8A65D(STA4,Q,M), and TK7A65W,S5X) are RoHS3 compliant and REACH unaffected. This ensures compliance with environmental regulations in EU and other regulated markets.

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