BF862,215 Equivalent & Substitute Parts Reference

Part Overview

The BF862,215 is an RF MOSFET JFET manufactured by NXP USA Inc., designed for surface mount applications in the SOT-23 (TO-236AB) package. This N-Channel JFET operates at a rated voltage of 20 V with a maximum current rating of 25 mA and is classified as an obsolete product. Due to its obsolete status, equivalent substitute parts are necessary for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and assured long-term availability.

Substiute Parts

BF862,215

NXP USA Inc.In Stock: 986938BF862,215 Datasheet

Current PartRFQ

2SK209-BL(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 86402SK209-BL(TE85L,F) Datasheet

MFR RecommendedRFQ

MMBF4393LT1G

onsemiIn Stock: 125465MMBF4393LT1G Datasheet

MFR RecommendedRFQ

MMBFJ309LT1G

onsemiIn Stock: 17826MMBFJ309LT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BF862,215 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Criteria:

• Technology: N-Channel JFET
• Package: TO-236-3 / SC-59 / SOT-23-3 (surface mount)
• Voltage Rating: Equal to or greater than 20 V
• Current Rating: Equal to or greater than 25 mA
• Compliance: ROHS3 compliant, MSL 1 rating

All identified substitute parts meet these requirements and are classified as active products, ensuring availability and long-term support. Substitutes differ in specific electrical parameters such as breakdown voltage, drain current at specified conditions, and maximum power dissipation, but remain functionally equivalent within the application envelope of the original BF862,215.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: MMBFJ309LT1G (onsemi)

The MMBFJ309LT1G is the closest functional equivalent to the BF862,215. Both devices are RF MOSFET JFETs with identical package specifications (SOT-23-3 / TO-236-3). The MMBFJ309LT1G operates at 25 V rated voltage with 30 mA current rating, exceeding the BF862,215 specifications. This part is actively manufactured and fully ROHS3 compliant with MSL 1 rating, ensuring long-term availability and regulatory compliance.

Secondary Substitute: MMBF4393LT1G (onsemi)

The MMBF4393LT1G provides an alternative with 30 V breakdown voltage and 225 mW maximum power dissipation. While the drain current specification (5 mA @ 15 V) is lower than the original part, this device accommodates applications with reduced current requirements. Active product status and full compliance certifications support production continuity.

Tertiary Substitute: 2SK209-BL(TE85L,F) (Toshiba Semiconductor and Storage)

The 2SK209-BL(TE85L,F) offers the highest voltage rating at 50 V with 14 mA drain current. This part is suitable for applications requiring enhanced voltage headroom. Toshiba's active product status and ROHS3 compliance ensure supply chain reliability.

All three substitutes maintain identical package form factors, surface mount compatibility, and regulatory compliance with the original BF862,215, enabling direct replacement in PCB designs.

Frequently Asked Questions (FAQ)

Q: Can the MMBFJ309LT1G directly replace the BF862,215 in existing designs?

A: Yes. Both devices share identical package specifications (SOT-23-3 / TO-236-3 / SC-59), pinout configuration, and N-Channel JFET technology. The MMBFJ309LT1G exceeds the BF862,215 electrical ratings (25 V vs. 20 V, 30 mA vs. 25 mA), ensuring functional compatibility without circuit modification.

Q: What is the primary reason for substitution?

A: The BF862,215 is classified as obsolete. Substitute parts are active products with assured manufacturing continuity, ensuring long-term component availability for production and design support.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All three substitute parts—MMBFJ309LT1G, MMBF4393LT1G, and 2SK209-BL(TE85L,F)—are ROHS3 compliant with MSL 1 moisture sensitivity rating, matching the original BF862,215 regulatory status.

Q: Which substitute offers the best current handling capability?

A: The MMBFJ309LT1G provides 30 mA current rating, exceeding the BF862,215 specification of 25 mA, making it suitable for applications requiring maximum current capacity within the SOT-23 package.

Q: Can I use the 2SK209-BL(TE85L,F) in a 20 V application?

A: Yes. The 2SK209-BL(TE85L,F) has a 50 V breakdown voltage rating, which exceeds the 20 V requirement. The higher voltage rating provides additional design margin without affecting circuit operation.

Q: What is the difference between the MMBF4393LT1G and MMBFJ309LT1G?

A: Both are N-Channel JFETs in SOT-23 packages. The MMBFJ309LT1G is specifically designated as an RF MOSFET JFET with 25 V rating and 30 mA current. The MMBF4393LT1G operates at 30 V with lower drain current (5 mA @ 15 V) and higher power dissipation (225 mW). Selection depends on specific application current and power requirements.

Q: Are moisture sensitivity levels identical across all parts?

A: Yes. The BF862,215 and all three substitute parts carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions for storage or handling.