BCR 519 E6327 Equivalent & Substitute Parts

Part Overview

The BCR 519 E6327 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for surface mount applications in the SOT-23-3 package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 330 mW power dissipation. The device features an integrated 4.7 kOhms base resistor for simplified circuit design.

The BCR 519 E6327 is classified as obsolete. Substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active equivalent devices from Rohm Semiconductor and onsemi provide compatible electrical and mechanical characteristics while offering current manufacturing status and improved availability.

Substiute Parts

BCR 519 E6327
Infineon TechnologiesIn Stock: 818BCR 519 E6327 Datasheet
BCR 519 E6327
Current Part
DTC114TKAT146
Rohm SemiconductorIn Stock: 186672DTC114TKAT146 Datasheet
DTC114TKAT146
MFR Recommended
DTC143TKAT146
Rohm SemiconductorIn Stock: 365224DTC143TKAT146 Datasheet
DTC143TKAT146
MFR Recommended
DTD114GKT146
Rohm SemiconductorIn Stock: 6391DTD114GKT146 Datasheet
DTD114GKT146
MFR Recommended
MMUN2214LT1G
onsemiIn Stock: 1004133MMUN2214LT1G Datasheet
MMUN2214LT1G
MFR Recommended
MMUN2216LT1G
onsemiIn Stock: 21311MMUN2216LT1G Datasheet
MMUN2216LT1G
MFR Recommended

Key Parameters

Parameter BCR 519 E6327 Unit
Transistor Type NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 500 mA
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 @ 2.5mA, 50mA mV
Frequency - Transition 100 MHz
Power - Max 330 mW
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the BCR 519 E6327 is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Voltage - Collector Emitter Breakdown: 50 V (minimum requirement)
  • Current - Collector (Ic) (Max): 500 mA or higher (for direct replacement)
  • Transistor Type: NPN - Pre-Biased (mandatory)
  • Package / Case: TO-236-3, SC-59, SOT-23-3 (mechanical compatibility)
  • Mounting Type: Surface Mount (process compatibility)

Base Resistor Configuration: The BCR 519 E6327 integrates a 4.7 kOhms base resistor. Substitute parts are grouped into two categories:

Group A - Matched Base Resistor (4.7 kOhms):

  • DTC143TKAT146 (Rohm Semiconductor)
  • MMUN2216LT1G (onsemi)

These devices maintain the identical 4.7 kOhms base resistor value, enabling direct circuit substitution without design modification.

Group B - Alternative Base Resistor (10 kOhms):

  • DTC114TKAT146 (Rohm Semiconductor)
  • MMUN2214LT1G (onsemi)

These devices feature a 10 kOhms base resistor. Substitution requires circuit evaluation to confirm compatibility with the application's bias network.

Group C - Matched Current Rating with Alternative Emitter Resistor:

  • DTD114GKT146 (Rohm Semiconductor)

This device maintains the 500 mA collector current rating and 4.7 kOhms base resistor equivalent function but includes a 10 kOhms emitter-base resistor configuration.

All substitute parts operate at 50 V collector-emitter breakdown voltage, are housed in SOT-23-3 packages, and support surface mount assembly processes.

Parameter Comparison

Parameter BCR 519 E6327 DTC114TKAT146 DTC143TKAT146 DTD114GKT146 MMUN2214LT1G MMUN2216LT1G Unit
Manufacturer Infineon Rohm Rohm Rohm onsemi onsemi
Product Status Obsolete Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 50 50 50 50 50 V
Current - Collector (Ic) (Max) 500 100 100 500 100 100 mA
Resistor - Base (R1) 4.7 10 4.7 10 4.7 kOhms
Resistor - Emitter Base (R2) 10 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 56 @ 50mA, 5V 80 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 300 @ 2.5mA, 50mA 300 @ 1mA, 10mA 150 @ 250µA, 5mA 300 @ 2.5mA, 50mA 250 @ 300µA, 10mA 250 @ 1mA, 10mA mV
Frequency - Transition 100 250 250 200 MHz
Power - Max 330 200 200 200 246 400 mW
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Direct Substitution (Preferred):

DTC143TKAT146 and MMUN2216LT1G are the primary substitutes for BCR 519 E6327. Both devices maintain the 4.7 kOhms base resistor value, 50 V collector-emitter breakdown voltage, and SOT-23-3 package configuration. These parts are active products with ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment and supply chain continuity.

Current-Limited Applications:

DTC114TKAT146 and MMUN2214LT1G are suitable for applications where collector current does not exceed 100 mA. These devices feature a 10 kOhms base resistor, which alters the bias network characteristics. Circuit evaluation is required to confirm compatibility with the original design's bias point and switching performance.

High Current Applications with Matched Bias:

DTD114GKT146 maintains the 500 mA collector current rating and provides equivalent bias network functionality through its integrated resistor configuration. This device is appropriate for applications requiring the full 500 mA current capability while operating within the 50 V voltage specification.

Compliance and Availability:

All substitute parts are active products with ROHS3 compliance and REACH unaffected status. Rohm Semiconductor and onsemi devices offer superior inventory availability compared to the obsolete BCR 519 E6327, supporting both immediate procurement and long-term supply security.

Frequently Asked Questions (FAQ)

Q: Can DTC114TKAT146 or MMUN2214LT1G be used as direct replacements for BCR 519 E6327?

A: These devices are electrically compatible at 50 V collector-emitter breakdown voltage and SOT-23-3 package level. However, the 10 kOhms base resistor differs from the original 4.7 kOhms value. Direct substitution requires circuit analysis to confirm the bias network operates within design specifications. If the application is sensitive to base resistor value, DTC143TKAT146 or MMUN2216LT1G are preferred.

Q: What is the difference between DTC143TKAT146 and MMUN2216LT1G?

A: Both devices feature 4.7 kOhms base resistors and 50 V collector-emitter breakdown voltage. DTC143TKAT146 is manufactured by Rohm Semiconductor with 200 mW maximum power dissipation. MMUN2216LT1G is manufactured by onsemi with 400 mW maximum power dissipation. The higher power rating of MMUN2216LT1G provides additional thermal margin in power-constrained applications.

Q: Can BCR 519 E6327 be replaced in applications requiring 500 mA collector current?

A: DTC114TKAT146 and MMUN2214LT1G are limited to 100 mA maximum collector current and are not suitable for 500 mA applications. DTD114GKT146 maintains the 500 mA rating and is the appropriate substitute. MMUN2216LT1G is also limited to 100 mA and cannot support 500 mA operation.

Q: Are all substitute parts RoHS compliant?

A: Yes. DTC114TKAT146, DTC143TKAT146, DTD114GKT146, MMUN2214LT1G, and MMUN2216LT1G are all ROHS3 compliant. The BCR 519 E6327 RoHS status is not specified in the provided data.

Q: What is the impact of different base resistor values on circuit performance?

A: The base resistor determines the bias current and switching characteristics. A 4.7 kOhms resistor (BCR 519 E6327, DTC143TKAT146, MMUN2216LT1G) provides higher bias current than a 10 kOhms resistor (DTC114TKAT146, MMUN2214LT1G). Applications designed for 4.7 kOhms operation may exhibit reduced switching speed or increased power dissipation if substituted with 10 kOhms devices. Circuit simulation or bench testing is recommended when base resistor values differ.

Q: Is the DTD114GKT146 suitable for all BCR 519 E6327 applications?

A: DTD114GKT146 maintains 500 mA collector current capability and 50 V voltage rating. However, it includes a 10 kOhms emitter-base resistor in addition to the base resistor network. This configuration differs from the BCR 519 E6327 and may alter bias point and switching behavior. Application-specific evaluation is required.

Q: What is the package compatibility between BCR 519 E6327 and substitute parts?

A: All substitute parts use the TO-236-3, SC-59, SOT-23-3 package designation. Physical dimensions and pin configurations are identical, enabling direct PCB footprint compatibility. No layout modifications are required for package substitution.

Q: Are there inventory differences between substitute parts?

A: Yes. MMUN2214LT1G has the highest inventory availability at 1,004,100 pieces. DTC143TKAT146 has 365,200 pieces available. MMUN2216LT1G has 21,285 pieces. DTC114TKAT146 has 186,620 pieces. DTD114GKT146 has the lowest availability at 6,300 pieces. Inventory levels should be considered for production planning and supply chain continuity.

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