BC858C-HF Equivalent & Substitute Parts Reference

Part Overview

The BC858C-HF is a small-signal PNP bipolar junction transistor manufactured by Comchip Technology, designed for general-purpose switching and amplification applications. This surface-mount device operates at 30 V maximum collector-emitter breakdown voltage with a maximum collector current of 100 mA and transition frequency of 100 MHz. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when electrical and mechanical parameters align within the allowed specifications for this product category, enabling direct replacement in circuit designs without functional degradation.

Substiute Parts

BC858C-HF
Comchip TechnologyIn Stock: 1254BC858C-HF Datasheet
BC858C-HF
Current Part
BC859B,215
NXP SemiconductorsIn Stock: 9498754BC859B,215 Datasheet
BC859B,215
Upgrade
BC858A RFG
Taiwan Semiconductor CorporationIn Stock: 9888BC858A RFG Datasheet
BC858A RFG
MFR Recommended
BC858B RFG
Taiwan Semiconductor CorporationIn Stock: 10204BC858B RFG Datasheet
BC858B RFG
MFR Recommended
BC858C RFG
Taiwan Semiconductor CorporationIn Stock: 10174BC858C RFG Datasheet
BC858C RFG
MFR Recommended
BCW30LT1G
onsemiIn Stock: 28655BCW30LT1G Datasheet
BCW30LT1G
MFR Recommended
BCW61C,235
Nexperia USA Inc.In Stock: 10895BCW61C,235 Datasheet
BCW61C,235
MFR Recommended
BCW61DE6327HTSA1
Infineon TechnologiesIn Stock: 891BCW61DE6327HTSA1 Datasheet
BCW61DE6327HTSA1
MFR Recommended
NSVBC858BLT1G
onsemiIn Stock: 68397NSVBC858BLT1G Datasheet
NSVBC858BLT1G
MFR Recommended
NSVBC858CLT1G
onsemiIn Stock: 6543NSVBC858CLT1G Datasheet
NSVBC858CLT1G
MFR Recommended
PMBS3906,235
NXP USA Inc.In Stock: 39325PMBS3906,235 Datasheet
PMBS3906,235
MFR Recommended
SBCW30LT1G
onsemiIn Stock: 877SBCW30LT1G Datasheet
SBCW30LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 30 V
Vce Saturation (Max) 650 mV @ 5mA, 100mA
Collector Cutoff Current (Max) 15 nA
Power Dissipation (Max) 250 mW
Transition Frequency 100 MHz
Operating Temperature Range -65 to 150 °C
Package Type SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the BC858C-HF are classified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Transistor polarity: PNP
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 30 V or higher
  • Package type: SOT-23-3 (TO-236-3, SC-59) surface mount
  • Vce saturation characteristics: 650 mV @ 5mA, 100mA
  • Collector cutoff current: 15 nA or lower
  • Power dissipation: 250 mW or higher
  • Transition frequency: 100 MHz or higher
  • Operating temperature range: Must support -65°C to 150°C or equivalent industrial range

Grouping Logic:

Group 1: Direct Electrical Equivalents (30 V Rating) Parts meeting all critical parameters with 30 V Vce(BR)max rating:

  • NSVBC858BLT1G (onsemi)
  • NSVBC858CLT1G (onsemi)
  • BC859B,215 (NXP Semiconductors)

Group 2: Enhanced Voltage Rating Substitutes (32 V Rating) Parts with higher voltage capability (32 V Vce(BR)max) providing additional design margin:

  • BCW30LT1G (onsemi)
  • BCW61C,235 (Nexperia USA Inc.)

Group 3: Manufacturer Variants (Taiwan Semiconductor Corporation) Alternative sourcing from Taiwan Semiconductor Corporation with equivalent electrical performance:

  • BC858A RFG
  • BC858B RFG
  • BC858C RFG

Group 4: Obsolete/Limited Availability

  • BCW61DE6327HTSA1 (Infineon Technologies) — Obsolete product status

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(BR) V Vce Sat mV Icbo nA Power mW fT MHz Temp Range °C Status
BC858C-HF Comchip Technology 100 30 650 @ 5mA, 100mA 15 250 100 -65 to 150 Active
BC859B,215 NXP Semiconductors 100 30 650 @ 5mA, 100mA 15 250 100 -55 to 150 Active
BC858A RFG Taiwan Semiconductor 100 30 650 @ 5mA, 100mA 100 200 100 -55 to 150 Active
BC858B RFG Taiwan Semiconductor 100 30 650 @ 5mA, 100mA 100 200 100 -55 to 150 Active
BC858C RFG Taiwan Semiconductor 100 30 650 @ 5mA, 100mA 100 200 100 -55 to 150 Active
BCW30LT1G onsemi 100 32 300 @ 500µA, 10mA 100 300 -65 to 150 Active
BCW61C,235 Nexperia USA Inc. 100 32 550 @ 1.25mA, 50mA 20 250 100 -55 to 150 Active
NSVBC858BLT1G onsemi 100 30 650 @ 5mA, 100mA 15 300 100 -55 to 150 Active
NSVBC858CLT1G onsemi 100 30 650 @ 5mA, 100mA 15 300 100 -55 to 150 Active
PMBS3906,235 NXP USA Inc. 100 40 400 @ 5mA, 50mA 50 250 150 -55 to 150 Active
BCW61DE6327HTSA1 Infineon Technologies 100 32 550 @ 1.25mA, 50mA 20 330 250 -55 to 150 Obsolete

Engineering Selection Recommendations

Tier 1: Direct Substitutes (Recommended for Drop-In Replacement)

NSVBC858BLT1G and NSVBC858CLT1G (onsemi) are the preferred direct substitutes. Both parts match the BC858C-HF electrical specifications exactly, including 30 V Vce(BR)max, 650 mV saturation voltage, and 100 MHz transition frequency. These parts offer enhanced power dissipation (300 mW vs. 250 mW), providing additional thermal margin. Both are in active production with RoHS3 compliance and unlimited moisture sensitivity rating. onsemi parts demonstrate high inventory availability (68,300 and 6,483 units respectively).

BC859B,215 (NXP Semiconductors) provides identical electrical performance with automotive-grade qualification (AEC-Q101). This part is suitable for applications requiring automotive-level reliability. Operating temperature range is -55°C to 150°C, which covers the industrial range but does not extend to the -65°C lower limit of the BC858C-HF.

Tier 2: Enhanced Voltage Rating Substitutes

BCW30LT1G (onsemi) and BCW61C,235 (Nexperia USA Inc.) both feature 32 V Vce(BR)max rating, providing 2 V additional voltage margin over the BC858C-HF. Both maintain 100 mA collector current and SOT-23-3 packaging. BCW61C,235 includes automotive-grade qualification (AEC-Q101). These parts are suitable for designs where higher voltage headroom is beneficial. BCW30LT1G does not specify transition frequency in the provided data.

Tier 3: Alternative Sourcing (Taiwan Semiconductor Corporation)

BC858A RFG, BC858B RFG, and BC858C RFG provide alternative sourcing from Taiwan Semiconductor Corporation. All three parts maintain 30 V Vce(BR)max and 100 mA collector current. Power dissipation is specified at 200 mW (lower than the 250 mW of BC858C-HF). Collector cutoff current is 100 nA (higher than the 15 nA specification of BC858C-HF). These parts are suitable for cost-optimized designs where the reduced power rating and higher leakage current are acceptable. All three are in active production with RoHS3 compliance.

Tier 4: Not Recommended

BCW61DE6327HTSA1 (Infineon Technologies) is classified as obsolete and should not be selected for new designs despite enhanced specifications (250 MHz transition frequency, 330 mW power dissipation).

PMBS3906,235 (NXP USA Inc.) features 40 V Vce(BR)max and 150 MHz transition frequency, exceeding BC858C-HF specifications. However, Vce saturation is 400 mV (lower than 650 mV), indicating different switching characteristics. This part is suitable only for applications where the enhanced voltage rating and frequency response are required and saturation voltage differences are acceptable.

Frequently Asked Questions (FAQ)

Q1: Can I use NSVBC858BLT1G as a direct replacement for BC858C-HF?

Yes. NSVBC858BLT1G matches all critical electrical parameters: 30 V Vce(BR)max, 100 mA collector current, 650 mV saturation voltage, 100 MHz transition frequency, and SOT-23-3 package. The part offers higher power dissipation (300 mW vs. 250 mW), providing additional thermal margin. Both parts are RoHS3 compliant with unlimited moisture sensitivity rating.

Q2: What is the difference between BC858C-HF and BC858C RFG?

BC858C-HF is manufactured by Comchip Technology and packaged in Tape & Reel format. BC858C RFG is manufactured by Taiwan Semiconductor Corporation and also packaged in Tape & Reel format. Both maintain 30 V Vce(BR)max and 100 mA collector current. BC858C RFG specifies 200 mW power dissipation (vs. 250 mW for BC858C-HF) and 100 nA collector cutoff current (vs. 15 nA). Operating temperature range for BC858C RFG is -55°C to 150°C, not extending to -65°C.

Q3: Why would I choose BCW30LT1G over NSVBC858BLT1G?

BCW30LT1G provides 32 V Vce(BR)max (vs. 30 V), offering 2 V additional voltage margin for designs operating near maximum ratings. BCW30LT1G also specifies 300 mW power dissipation. However, transition frequency is not specified for BCW30LT1G. Selection depends on whether the higher voltage rating is required for your application.

Q4: Is BC859B,215 suitable for automotive applications?

Yes. BC859B,215 carries automotive-grade qualification (AEC-Q101) and is manufactured by NXP Semiconductors. It matches BC858C-HF electrical specifications exactly. Operating temperature range is -55°C to 150°C. This part is recommended for automotive-grade designs where AEC-Q101 certification is required.

Q5: Can I use PMBS3906,235 as a substitute?

PMBS3906,235 is not recommended as a direct substitute. While it maintains 100 mA collector current and SOT-23-3 packaging, it features 40 V Vce(BR)max (vs. 30 V) and 400 mV Vce saturation (vs. 650 mV). The lower saturation voltage indicates different switching characteristics. Use PMBS3906,235 only if your design specifically requires the enhanced voltage rating and can accommodate the different saturation behavior.

Q6: What is the operating temperature difference between BC858C-HF and Taiwan Semiconductor variants?

BC858C-HF operates from -65°C to 150°C. Taiwan Semiconductor variants (BC858A RFG, BC858B RFG, BC858C RFG) operate from -55°C to 150°C. The BC858C-HF extends 10°C lower at the minimum temperature. For applications requiring operation below -55°C, BC858C-HF or onsemi variants (NSVBC858BLT1G, NSVBC858CLT1G) are required.

Q7: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed are RoHS3 compliant. All parts also carry unlimited moisture sensitivity rating (MSL 1), indicating no special storage or handling requirements.

Q8: What packaging formats are available?

All parts use SOT-23-3 (TO-236-3, SC-59) surface-mount package. BC858C-HF and Taiwan Semiconductor variants are supplied in Tape & Reel (TR) format. BC859B,215 and PMBS3906,235 are supplied in Bulk format. BCW30LT1G, BCW61C,235, NSVBC858BLT1G, and NSVBC858CLT1G are supplied in Tape & Reel format. Packaging format does not affect electrical compatibility.

Q9: Which substitute offers the best inventory availability?

NSVBC858BLT1G (onsemi) offers the highest inventory availability at 68,300 units in stock. This part provides direct electrical equivalence to BC858C-HF with enhanced power dissipation and active production status.

Q10: Can I mix different manufacturers in the same design?

Yes. All substitute parts maintain identical SOT-23-3 package dimensions and pinout. Electrical parameters are within allowed substitution ranges. However, verify that your design does not depend on manufacturer-specific characteristics such as DC current gain (hFE) matching between multiple transistors in the same circuit. If hFE matching is critical, source all transistors from the same manufacturer and production lot.

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