BC858C Equivalent & Substitute Parts

Part Overview

The BC858C is a PNP bipolar junction transistor manufactured by onsemi in SOT-23-3 surface mount packaging. This device is classified as obsolete product status, which necessitates identification of equivalent and substitute components for ongoing design support and procurement. The BC858C operates at maximum collector current of 100 mA, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 310 mW. Equivalent parts are available from onsemi in active product status with improved compliance certifications and extended temperature operating ranges.

Key Parameters

Parameter	BC858C	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	30	V
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA	—
DC Current Gain (hFE) Min @ Ic, Vce	420 @ 2mA, 5V	—
Power - Max	310	mW
Frequency - Transition	150	MHz
Operating Temperature (TJ)	150	°C
Package / Case	SOT-23-3	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the BC858C is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP
Collector-Emitter Breakdown Voltage: 30 V minimum
Maximum Collector Current: 100 mA minimum
Package / Case: SOT-23-3 (TO-236-3, SC-59)
Mounting Type: Surface Mount
Vce Saturation: 650 mV @ 5 mA, 100 mA

Secondary Compatibility Factors:

DC Current Gain (hFE): 420 @ 2 mA, 5 V or equivalent range
Power Dissipation: 300 mW or greater
Frequency - Transition: 100 MHz or greater
Operating Temperature Range: Extended range preferred for reliability

Substitute parts are grouped into two categories: direct equivalents within the BC858 series from onsemi with active product status, and alternative PNP transistors from other manufacturers meeting the same electrical specifications and package requirements.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce Breakdown (Max) V	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Power (Max) mW	Freq (MHz)	Temp Range °C	Package	Status	RoHS
BC858C	onsemi	100	30	650mV @ 5mA, 100mA	420 @ 2mA, 5V	310	150	—/150	SOT-23-3	Obsolete	Non-compliant
BC858ALT1G	onsemi	100	30	650mV @ 5mA, 100mA	125 @ 2mA, 5V	300	100	-55/150	SOT-23-3	Active	ROHS3 Compliant
BC858BLT1G	onsemi	100	30	650mV @ 5mA, 100mA	220 @ 2mA, 5V	300	100	-55/150	SOT-23-3	Active	ROHS3 Compliant
BC858BLT3G	onsemi	100	30	650mV @ 5mA, 100mA	220 @ 2mA, 5V	300	100	-55/150	SOT-23-3	Active	ROHS3 Compliant
BC858CLT1G	onsemi	100	30	650mV @ 5mA, 100mA	420 @ 2mA, 5V	300	100	-55/150	SOT-23-3	Active	ROHS3 Compliant
BC858CLT3G	onsemi	100	30	650mV @ 5mA, 100mA	420 @ 2mA, 5V	300	100	-55/150	SOT-23-3	Active	ROHS3 Compliant
NSVBC858CLT1G	onsemi	100	30	650mV @ 5mA, 100mA	420 @ 2mA, 5V	300	100	-55/150	SOT-23-3	Active	ROHS3 Compliant
BCW30LT1G	onsemi	100	32	300mV @ 500µA, 10mA	215 @ 2mA, 5V	300	—	-65/150	SOT-23-3	Active	ROHS3 Compliant
2SB1695KT146	Rohm Semiconductor	1500	30	370mV @ 50mA, 1A	270 @ 100mA, 2V	200	280	—/150	SOT-23-3	Active	ROHS3 Compliant
2SB1695TL	Rohm Semiconductor	1500	30	370mV @ 50mA, 1A	270 @ 100mA, 2V	500	280	—/150	SC-96	Active	ROHS3 Compliant
2SB1706TL	Rohm Semiconductor	2000	30	370mV @ 75mA, 1.5A	270 @ 200mA, 2V	500	280	—/150	SC-96	Active	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalents (Recommended Primary Selection):

BC858CLT1G and BC858CLT3G are the preferred direct substitutes for BC858C. Both parts maintain identical electrical specifications including DC current gain of 420 @ 2 mA, 5 V, collector-emitter breakdown voltage of 30 V, and maximum collector current of 100 mA. These parts are available in active product status with ROHS3 compliance and extended operating temperature range of -55°C to 150°C. The primary difference between CLT1G and CLT3G is packaging format: CLT1G is supplied in Cut Tape with Digi-Reel, while CLT3G is supplied in Tape & Reel format. Both are manufactured by onsemi and maintain SOT-23-3 package compatibility.

NSVBC858CLT1G provides identical electrical performance to BC858CLT1G with active product status and ROHS3 compliance. This variant is suitable for applications requiring NSV (Nitrided Surface Voltage) processing.

Secondary Equivalents (Alternative Selection):

BC858BLT1G and BC858BLT3G are active alternatives with reduced DC current gain of 220 @ 2 mA, 5 V. These parts maintain all other electrical parameters equivalent to BC858C and are available in active product status with ROHS3 compliance. Selection of B-grade variants is appropriate when the lower hFE specification is acceptable for the application circuit.

BC858ALT1G is an active alternative with further reduced DC current gain of 125 @ 2 mA, 5 V. This part is suitable only for applications where lower current gain is tolerable.

Alternative Manufacturer Options:

BCW30LT1G from onsemi provides slightly elevated collector-emitter breakdown voltage of 32 V with reduced Vce saturation of 300 mV @ 500 µA, 10 mA. This part is suitable for applications requiring improved saturation characteristics and extended lower temperature operation to -65°C.

2SB1695KT146 and 2SB1695TL from Rohm Semiconductor are higher current alternatives rated for 1.5 A maximum collector current. These parts are not direct substitutes due to different package formats (SMT3 and TSMT3 respectively) and different saturation voltage specifications. Selection of these parts requires circuit redesign and PCB layout modification.

2SB1706TL from Rohm Semiconductor is rated for 2 A maximum collector current and is not a direct substitute due to package incompatibility and different electrical characteristics.

Compliance and Procurement Considerations:

All recommended substitute parts are ROHS3 compliant, addressing the non-compliance status of the obsolete BC858C. Extended operating temperature ranges on active variants provide improved reliability margins. Inventory availability is confirmed for all recommended parts.

Frequently Asked Questions (FAQ)

Q: Can BC858CLT1G directly replace BC858C without circuit modification?

A: Yes. BC858CLT1G maintains identical electrical specifications for collector current (100 mA), collector-emitter breakdown voltage (30 V), Vce saturation (650 mV @ 5 mA, 100 mA), and DC current gain (420 @ 2 mA, 5 V). The SOT-23-3 package is mechanically and electrically compatible. No circuit modification is required.

Q: What is the difference between BC858CLT1G and BC858CLT3G?

A: Both parts are electrically identical. The difference is packaging format only. CLT1G is supplied in Cut Tape with Digi-Reel format, while CLT3G is supplied in Tape & Reel format. Selection depends on procurement and assembly equipment compatibility.

Q: Why is BC858BLT1G listed as an alternative if it has lower DC current gain?

A: BC858BLT1G has DC current gain of 220 @ 2 mA, 5 V compared to 420 for BC858C. This part is suitable for applications where the circuit design accommodates lower current gain. The reduced hFE may require increased base drive current in some applications. Verification against specific circuit requirements is necessary.

Q: Can 2SB1695TL replace BC858C in the same PCB footprint?

A: No. 2SB1695TL uses SC-96 package (TSMT3) instead of SOT-23-3. Physical footprint is incompatible. Additionally, 2SB1695TL is rated for 1.5 A collector current and has different saturation voltage characteristics. This part requires PCB redesign and is not a direct substitute.

Q: Is BCW30LT1G a suitable replacement for BC858C?

A: BCW30LT1G is a functional alternative with compatible SOT-23-3 packaging and 100 mA collector current rating. However, it has different Vce saturation characteristics (300 mV @ 500 µA, 10 mA versus 650 mV @ 5 mA, 100 mA) and different DC current gain (215 @ 2 mA, 5 V). Selection requires circuit analysis to confirm saturation voltage compatibility. The higher collector-emitter breakdown voltage (32 V) provides additional margin.

Q: What is the advantage of NSVBC858CLT1G over BC858CLT1G?

A: NSVBC858CLT1G incorporates NSV (Nitrided Surface Voltage) processing. Both parts maintain identical electrical specifications. Selection of NSVBC858CLT1G is application-specific and depends on circuit requirements for enhanced voltage handling characteristics.

Q: Are all recommended substitute parts ROHS3 compliant?

A: Yes. All active product variants listed (BC858ALT1G, BC858BLT1G, BC858BLT3G, BC858CLT1G, BC858CLT3G, NSVBC858CLT1G, and BCW30LT1G) are ROHS3 compliant. The obsolete BC858C is non-compliant. Substitution with active variants addresses regulatory compliance requirements.

Q: What is the operating temperature range difference between BC858C and its substitutes?

A: BC858C specifies maximum operating temperature of 150°C only. Active substitute variants (BC858ALT1G through BC858CLT3G) specify extended range of -55°C to 150°C. BCW30LT1G extends lower temperature operation to -65°C. Extended temperature ranges provide improved reliability margins for industrial and automotive applications.

Q: Can I use BC858ALT1G if I need the lowest cost option?

A: BC858ALT1G has the lowest DC current gain specification (125 @ 2 mA, 5 V) among BC858 variants. This part is suitable only if circuit design accommodates significantly reduced current gain. Verification against specific application requirements is necessary before selection.

Q: What inventory status should I consider for procurement?

A: BC858CLT3G has the highest confirmed inventory (65,100 pieces), followed by BC858CLT1G (35,300 pieces). Both are active products with established supply chains. BC858C is obsolete with limited remaining inventory (18,300 pieces). For new designs and long-term procurement, selection of BC858CLT3G or BC858CLT1G is recommended.

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