BC858C Equivalent & Substitute Parts Reference

Part Overview

The BC858C from Taiwan Semiconductor Corporation is a PNP bipolar junction transistor (BJT) in a SOT-23 surface-mount package. It features a voltage rating of 30 V, a collector current of 100 mA, a transition frequency of 100 MHz, and a maximum power dissipation of 200 mW. This part is widely used in amplification and switching applications within compact electronic devices. The part is active and available, but identification of equivalent and substitute parts is important for design flexibility, ensuring supply continuity, and supporting dual-source strategies in engineering projects.

Substiute Parts

BC858C
Taiwan Semiconductor CorporationIn Stock: 18319BC858C Datasheet
BC858C
Current Part
BC858C RFG
Taiwan Semiconductor CorporationIn Stock: 10174BC858C RFG Datasheet
BC858C RFG
Parametric Equivalent
BC859CE6327HTSA1
Infineon TechnologiesIn Stock: 5745BC859CE6327HTSA1 Datasheet
BC859CE6327HTSA1
Similar
BCW30,215
Nexperia USA Inc.In Stock: 12330BCW30,215 Datasheet
BCW30,215
Similar
NSVBC858BLT1G
onsemiIn Stock: 68397NSVBC858BLT1G Datasheet
NSVBC858BLT1G
Similar

Key Parameters

Parameter BC858C
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)30 V
Current - Collector (Ic) (Max)100 mA
Vce Saturation (Max) @ Ib, Ic650 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max)100 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2 mA, 5 V
Power - Max200 mW
Frequency - Transition100 MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected

Substitute Part Grouping Explanation

Equivalent and substitute parts are identified strictly based on key electrical and mechanical parameters. The allowable parameters for substitution in this category include transistor type, collector-emitter breakdown voltage (max), collector current (max), Vce saturation (max @ Ib, Ic), collector cutoff current (max), DC current gain (min @ Ic, Vce), transition frequency, power dissipation (max), operating temperature range, mounting type, package/case, and relevant environmental compliance such as RoHS and REACH. All listed substitute parts match these criteria as provided.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case Supplier Device Package RoHS Status REACH Status
BC858C Taiwan Semiconductor Corporation PNP 30 V 100 mA 650 mV @ 5 mA, 100 mA 100 nA (ICBO) 420 @ 2 mA, 5 V 200 mW 100 MHz -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 Compliant REACH Unaffected
BC858C RFG Taiwan Semiconductor Corporation PNP 30 V 100 mA 650 mV @ 5 mA, 100 mA 100 nA (ICBO) 420 @ 2 mA, 5 V 200 mW 100 MHz -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 Compliant REACH Unaffected
BC859CE6327HTSA1 Infineon Technologies PNP 30 V 100 mA 650 mV @ 5 mA, 100 mA 15 nA (ICBO) 420 @ 2 mA, 5 V 330 mW 250 MHz 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23 ROHS3 Compliant REACH Unaffected
BCW30,215 Nexperia USA Inc. PNP 32 V 100 mA 150 mV @ 2.5 mA, 50 mA 100 nA (ICBO) 215 @ 2 mA, 5 V 250 mW 100 MHz 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB ROHS3 Compliant REACH Unaffected
NSVBC858BLT1G onsemi PNP 30 V 100 mA 650 mV @ 5 mA, 100 mA 15 nA (ICBO) 220 @ 2 mA, 5 V 300 mW 100 MHz -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) ROHS3 Compliant REACH Unaffected

Engineering Selection Recommendations

All listed substitute parts, including BC858C RFG, BC859CE6327HTSA1, BCW30,215, and NSVBC858BLT1G, match the key RoHS and REACH environmental compliance statuses provided in the main BC858C part. Product status should be used as a selection criterion. The BC858C, BC858C RFG, BCW30,215, and NSVBC858BLT1G are active, while BC859CE6327HTSA1 is classified as last time buy. Selection should prefer active parts for long-term availability unless specific manufacturer sourcing requirements exist. Packaging, mounting type, and package/case information confirm surface-mount compatibility.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting BC858C in circuit designs?
A1: Key parameters for substitution are transistor type, maximum voltage and current ratings, Vce saturation voltage, DC current gain, transition frequency, power dissipation, operating temperature range, mounting type, package/case compatibility, and environmental compliance.

Q2: Are all listed equivalent and substitute parts surface-mountable in SOT-23 (TO-236-3, SC-59) format?
A2: Yes, all listed parts use a surface-mount package format compatible with TO-236-3, SC-59, or SOT-23-3.

Q3: How does the product status affect the selection of substitute transistors?
A3: Product status indicates ongoing availability. Active status is preferred for new and continuing designs, while "last time buy" parts are suitable for existing designs nearing end-of-life.

Q4: Is RoHS and REACH compliance guaranteed for all substitutes?
A4: Yes, all listed substitute parts are explicitly specified as ROHS3 compliant and REACH unaffected based on the provided data.

Q5: Should variations in current gain (hFE) and cutoff current (ICBO) be considered?
A5: Substitute parts should be selected with comparable DC current gain and collector cutoff current values as specified, to maintain consistent circuit behavior.

Q6: Are lead-free and environmental certifications considered in substitution?
A6: Yes, only parts directly marked as RoHS and REACH compliant are included as substitutes in this reference.

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