BC849C-AP Equivalent & Substitute Parts

Part Overview

The BC849C-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and transition frequency of 100 MHz. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters. Substitute parts must satisfy the same or superior electrical ratings while maintaining the SOT-23 surface mount package configuration.

Key Parameters

Parameter	BC849C-AP	Unit
Transistor Type	NPN	—
Collector Current (Max)	100	mA
Collector-Emitter Breakdown Voltage (Max)	30	V
Power Dissipation (Max)	225	mW
Transition Frequency	100	MHz
DC Current Gain (hFE Min) @ Ic, Vce	420 @ 2mA, 5V	—
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the BC849C-AP are classified into two categories based on electrical parameter alignment:

Direct Substitutes maintain identical or equivalent electrical specifications across all critical parameters: collector current (100 mA), collector-emitter breakdown voltage (30 V minimum), DC current gain (420 @ 2mA, 5V), transition frequency (100 MHz), and surface mount SOT-23 packaging. These parts are interchangeable without circuit modification.

Similar Substitutes satisfy the primary functional requirements—NPN transistor type, 100 mA collector current capability, minimum 30 V breakdown voltage, and SOT-23 packaging—but exhibit variations in secondary parameters such as power dissipation, transition frequency, DC current gain, or saturation voltage. These parts are suitable for applications where the specific parameter variation does not impact circuit performance.

The substitution logic is based on the following allowed parameters:

Transistor polarity (NPN)
Maximum collector current (≥100 mA)
Collector-emitter breakdown voltage (≥30 V)
Package configuration (SOT-23-3, TO-236-3, SC-59)
Surface mount mounting type
Operating temperature range compatibility (-55°C to 150°C minimum)
RoHS3 compliance

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) (Max) V	hFE (Min) @ 2mA, 5V	fT MHz	P (Max) mW	Vce(sat) @ 5mA, 100mA mV	Status	Package
BC849C-AP	Micro Commercial Co	100	30	420	100	225	500	Obsolete	SOT-23
BC849C,215	Nexperia USA Inc.	100	30	420	100	250	600	Active	TO-236AB
BCW33LT1G	onsemi	100	32	420	—	300	250 @ 500µA, 10mA	Active	SOT-23-3
BC848A RFG	Taiwan Semiconductor Corporation	100	30	110	100	200	500	Active	SOT-23
BC848B RFG	Taiwan Semiconductor Corporation	100	30	200	100	200	500	Active	SOT-23
BC848BE6433HTMA1	Infineon Technologies	100	30	200	250	330	600	Last Time Buy	PG-SOT23
BC848C RFG	Taiwan Semiconductor Corporation	100	30	420	100	200	500	Active	SOT-23
BC848CLT1G	onsemi	100	30	420	100	300	600	Active	SOT-23-3
BC849BLT1G	onsemi	100	30	200	100	300	600	Active	SOT-23-3
BCW32,235	Nexperia USA Inc.	100	32	200	100	250	210 @ 2.5mA, 50mA	Active	TO-236AB
BCW60B,215	Nexperia USA Inc.	100	32	180	250	250	550 @ 1.25mA, 50mA	Active	TO-236AB

Engineering Selection Recommendations

Direct Substitution (Preferred)

BC849C,215 (Nexperia USA Inc.) is the primary direct substitute for BC849C-AP. This part maintains identical electrical specifications including 100 mA collector current, 30 V breakdown voltage, 420 hFE minimum gain, and 100 MHz transition frequency. The part is in active production status with AEC-Q101 automotive qualification and ROHS3 compliance. Inventory availability is substantial (75,716 units). The TO-236AB package is mechanically and electrically equivalent to SOT-23-3.

BC848CLT1G (onsemi) and BC849BLT1G (onsemi) are functionally equivalent alternatives. Both maintain 30 V breakdown voltage, 100 mA collector current, and 100 MHz transition frequency in active production status. BC848CLT1G matches the 420 hFE specification of the original part. Both devices feature enhanced power dissipation (300 mW) and improved saturation characteristics.

Similar Substitution (Application-Dependent)

BC848C RFG (Taiwan Semiconductor Corporation) provides equivalent electrical performance with 420 hFE gain and 100 MHz transition frequency. This part is in active production with adequate inventory (9,760 units).

BCW33LT1G (onsemi) and BCW32,235 (Nexperia USA Inc.) offer enhanced voltage ratings (32 V breakdown) and improved saturation voltage characteristics. These parts are suitable for applications requiring superior voltage margin or lower saturation losses. Both are AEC-Q101 qualified and in active production.

BCW60B,215 (Nexperia USA Inc.) provides the highest transition frequency (250 MHz) among available substitutes, making it suitable for high-frequency applications. This part maintains 32 V breakdown voltage and features automotive qualification.

Status Considerations

Avoid BC848BE6433HTMA1 (Infineon Technologies) for new designs due to Last Time Buy status, despite superior transition frequency (250 MHz) and power dissipation (330 mW).

All recommended substitutes maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring compatibility with standard manufacturing processes.

Frequently Asked Questions (FAQ)

Q: Can BC849C,215 directly replace BC849C-AP without circuit modification?

A: Yes. BC849C,215 maintains identical electrical specifications across all critical parameters: 100 mA collector current, 30 V breakdown voltage, 420 hFE minimum gain, and 100 MHz transition frequency. The TO-236AB package is mechanically and electrically equivalent to SOT-23-3. No circuit modification is required.

Q: What is the difference between BC848C RFG and BC849C-AP?

A: Both parts share identical electrical specifications: 100 mA collector current, 30 V breakdown voltage, 420 hFE gain, and 100 MHz transition frequency. The primary difference is the base product number designation (BC848 versus BC849), which reflects historical manufacturer classification. Functionally, these parts are interchangeable. BC848C RFG is in active production with higher inventory availability.

Q: Are BCW32,235 and BCW60B,215 suitable substitutes?

A: Both parts are suitable substitutes with enhanced specifications. They provide 32 V breakdown voltage (versus 30 V), maintaining 100 mA collector current and SOT-23 packaging. BCW32,235 offers improved saturation voltage (210 mV @ 2.5mA, 50mA). BCW60B,215 provides enhanced transition frequency (250 MHz). Both are AEC-Q101 qualified and in active production. Selection depends on application requirements for voltage margin or frequency performance.

Q: What is the significance of the hFE (DC Current Gain) parameter in substitution?

A: DC current gain determines the base current required to achieve specified collector current levels. BC849C-AP specifies 420 hFE minimum at 2 mA collector current and 5 V Vce. Substitutes with lower hFE (such as BC848A RFG at 110 or BCW60B,215 at 180) require proportionally higher base current for equivalent collector current. Substitutes with matching or higher hFE (BC849C,215, BC848CLT1G, BCW32,235) are directly compatible. Application circuits must be evaluated if hFE differs significantly.

Q: Can I use BC848BE6433HTMA1 as a substitute?

A: BC848BE6433HTMA1 is not recommended for new designs. Although it provides superior transition frequency (250 MHz) and power dissipation (330 mW), this part is classified as Last Time Buy, indicating discontinued production. Existing inventory is limited (1,160 units). For new product development, select from active production alternatives such as BC849C,215, BC848CLT1G, or BCW60B,215.

Q: What packaging considerations apply to these substitutes?

A: All substitutes utilize SOT-23-3 or TO-236AB surface mount packages, which are mechanically and electrically equivalent. Both package designations refer to the same three-terminal configuration with identical pin spacing (2.0 mm) and footprint dimensions. PCB layout modifications are not required when substituting between these package types.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance, matching the original BC849C-AP specification. This ensures compatibility with standard manufacturing processes and regulatory requirements.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 qualification indicates that the part meets automotive industry reliability standards established by the Automotive Electronics Council. Parts with this qualification (BC849C,215, BCW32,235, BCW60B,215) are suitable for automotive and high-reliability applications. Parts without this designation are suitable for general industrial and consumer applications.

Q: How does transition frequency (fT) affect substitution suitability?

A: Transition frequency determines the maximum frequency at which the transistor maintains useful gain. BC849C-AP specifies 100 MHz. Substitutes with equal or higher transition frequency (100 MHz or greater) are directly compatible. BCW60B,215 at 250 MHz provides enhanced high-frequency performance for applications requiring extended bandwidth. Substitutes with unspecified transition frequency (BCW33LT1G) are suitable for applications operating below 100 MHz.

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