BC848AW-TP Equivalent & Substitute Parts

Part Overview

The BC848AW-TP is an NPN bipolar junction transistor (BJT) manufactured by Micro Commercial Co in SOT-323 surface mount packaging. This small-signal transistor is designed for interface applications requiring low-power switching and amplification at frequencies up to 100 MHz. The part is currently in active production status with 1,159 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the critical parameters that define transistor functionality: collector current rating, breakdown voltage, saturation characteristics, current gain, power dissipation, and frequency response. Packaging compatibility and operating temperature range are also evaluated for direct board-level substitution.

Key Parameters

Parameter	BC848AW-TP Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	30	V
Vce Saturation (Max) @ Ib, Ic	600 mV @ 5 mA, 100 mA	—
Current - Collector Cutoff (Max)	15	nA
DC Current Gain (hFE) Min @ Ic, Vce	110 @ 2 mA, 5 V	—
Power - Max	150	mW
Frequency - Transition	100	MHz
Operating Temperature Range	−65 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	SC-70, SOT-323	—

Substitute Part Grouping Explanation

Substitution of the BC848AW-TP is determined by strict equivalence in the following critical parameters:

Electrical Equivalence Requirements:

Transistor type: NPN
Maximum collector current: 100 mA
Collector-emitter breakdown voltage: 30 V
Saturation voltage: 600 mV @ 5 mA, 100 mA
Transition frequency: 100 MHz
DC current gain minimum: 110 @ 2 mA, 5 V

Mechanical Compatibility Requirements:

Package type: SOT-323 (SC-70)
Mounting type: Surface Mount

Acceptable Parameter Variations:

Maximum collector cutoff current (ICBO): Substitute parts may have higher values (100 nA vs. 15 nA) without affecting circuit performance
Maximum power dissipation: Substitute parts rated at 200 mW exceed the 150 mW requirement and are acceptable
Operating temperature range: Substitute parts with narrower ranges (−55 to 150°C vs. −65 to 150°C) are acceptable for applications not requiring extended low-temperature operation

Substitute parts are grouped into two categories: direct manufacturer equivalents (BC848 series variants) and parametric equivalents from alternative manufacturers.

Parameter Comparison

Part Number	Manufacturer	Ic Max (mA)	Vce Breakdown (V)	hFE Min @ 2mA, 5V	Power Max (mW)	Freq (MHz)	Temp Range (°C)	Package	Packaging Type
BC848AW-TP	Micro Commercial Co	100	30	110	150	100	−65 to 150	SOT-323	Bulk
BC848AW RFG	Taiwan Semiconductor	100	30	110	200	100	−55 to 150	SOT-323	Tape & Reel
BC848BW RFG	Taiwan Semiconductor	100	30	200	200	100	−55 to 150	SOT-323	Tape & Reel
BC848CW RFG	Taiwan Semiconductor	100	30	420	200	100	−55 to 150	SOT-323	Tape & Reel
BC849AW RFG	Taiwan Semiconductor	100	30	110	200	100	−55 to 150	SOT-323	Tape & Reel
BC849BW RFG	Taiwan Semiconductor	100	30	200	200	100	−55 to 150	SOT-323	Tape & Reel
BC849CW RFG	Taiwan Semiconductor	100	30	420	200	100	−55 to 150	SOT-323	Tape & Reel
BC848AWT1G	onsemi	100	30	110	150	100	−55 to 150	SOT-323	Bulk

Engineering Selection Recommendations

Direct Parametric Equivalent:

BC848AWT1G (onsemi) is a parametric equivalent with identical electrical specifications and power rating to the BC848AW-TP. Both parts are supplied in bulk packaging and share the same maximum power dissipation of 150 mW. The BC848AWT1G is RoHS3 compliant and carries ROHS3 certification. This part is suitable for direct substitution in applications where the extended low-temperature operating range (−65°C) of the original part is not required.

Functional Equivalents with Enhanced Specifications:

BC848AW RFG and BC849AW RFG (Taiwan Semiconductor) maintain the minimum DC current gain of 110 @ 2 mA, 5 V and are supplied in tape and reel packaging. Both parts feature increased maximum power dissipation (200 mW) and are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. These parts are suitable for applications where higher power headroom is beneficial.

Higher Gain Variants:

BC848BW RFG, BC848CW RFG, BC849BW RFG, and BC849CW RFG offer higher minimum DC current gain specifications (200 and 420 respectively) while maintaining all other electrical parameters. These variants are applicable in circuits where higher current gain improves biasing stability or reduces base drive requirements. All are RoHS3 compliant with MSL 1 rating.

Compliance and Certification:

All substitute parts listed carry REACH Unaffected or Vendor Undefined status and EAR99 ECCN classification, matching the regulatory profile of the BC848AW-TP. Taiwan Semiconductor parts include explicit RoHS3 compliance and MSL 1 moisture sensitivity certification.

Frequently Asked Questions (FAQ)

Q: Can BC848BW RFG or BC848CW RFG be used as direct replacements for BC848AW-TP?

A: Yes. Both parts maintain identical maximum collector current (100 mA), breakdown voltage (30 V), saturation voltage, transition frequency (100 MHz), and package type (SOT-323). The higher DC current gain (200 and 420 respectively, versus 110 minimum) does not prevent substitution; circuits designed for the lower gain specification will operate within design margins with higher gain devices.

Q: What is the difference between BC848 and BC849 series transistors?

A: Both series share identical electrical specifications for maximum collector current, breakdown voltage, saturation characteristics, and frequency response. The BC849 series is a variant designation within the same product family. Substitution between BC848 and BC849 series is electrically valid based on the provided parameters.

Q: Is the BC848AWT1G suitable for applications requiring −65°C operation?

A: The BC848AWT1G operates from −55°C to 150°C, which does not include the extended low-temperature range of the original BC848AW-TP (−65 to 150°C). For applications requiring operation below −55°C, the BC848AW-TP or equivalent parts with −65°C minimum temperature must be used.

Q: What is the significance of the "W" designation in BC848AW and the "RFG" suffix?

A: The "W" indicates the specific package variant (SOT-323 in this case). The "RFG" suffix indicates Taiwan Semiconductor Corporation's tape and reel packaging format. These designations do not affect electrical equivalence; they identify packaging and supplier configuration only.

Q: Can I substitute a part with 200 mW power rating for one rated at 150 mW?

A: Yes. A higher power rating indicates greater thermal capability and does not degrade performance in circuits designed for the lower rating. The 200 mW rated parts (Taiwan Semiconductor variants) provide additional thermal margin in applications approaching the original 150 mW limit.

Q: Are all listed substitute parts RoHS compliant?

A: Taiwan Semiconductor parts (BC848AW RFG, BC848BW RFG, BC848CW RFG, BC849AW RFG, BC849BW RFG, BC849CW RFG) are explicitly RoHS3 compliant with MSL 1 moisture sensitivity rating. The BC848AWT1G (onsemi) is also RoHS3 compliant. The original BC848AW-TP does not specify RoHS status in the provided data.

Q: What does ICBO (collector cutoff current) variation mean for circuit performance?

A: The BC848AW-TP specifies 15 nA maximum ICBO, while substitute parts specify 100 nA maximum. This parameter represents leakage current in the off state. The higher value in substitute parts does not affect switching or amplification performance in typical interface applications and remains negligible for circuit design purposes.

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