BAY80-TAP Equivalent & Substitute Parts

Part Overview

The BAY80-TAP is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 120 V DC reverse voltage and 250 mA average rectified current in a DO-35 through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The BAY80-TAP features fast recovery characteristics with a reverse recovery time of 50 ns and is qualified to AEC-Q101 automotive standards with ROHS3 compliance.

Key Parameters

Parameter	BAY80-TAP Value	Unit
Voltage - DC Reverse (Vr) (Max)	120	V
Current - Average Rectified (Io)	250	mA
Voltage - Forward (Vf) (Max) @ If	1.07 @ 150 mA	V
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	100 nA @ 120 V	nA
Operating Temperature - Junction (Max)	175	°C
Package / Case	DO-204AH, DO-35, Axial	—
Mounting Type	Through Hole	—
Technology	Standard	—

Substitute Part Grouping Explanation

Substitution of the BAY80-TAP is determined by the following critical parameters: maximum reverse voltage (Vr), average rectified current (Io), package type (DO-35 through-hole), and operating temperature range. Substitute parts must meet or exceed the voltage and current ratings of the original part to ensure functional compatibility in the application circuit.

The BAY80-TAP operates at 120 V with 250 mA current capacity. Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (125 V to 150 V, 200 mA) Parts with voltage ratings of 125 V or higher and current ratings of 200 mA or higher provide functional substitution. These parts maintain the same DO-35 package and through-hole mounting configuration. Voltage headroom above 120 V accommodates circuit margin requirements.

Category 2: Voltage-Elevated Alternatives (150 V, 200 mA) Parts rated at 150 V provide additional voltage margin while maintaining 200 mA current capacity. These are suitable for applications requiring enhanced voltage stress tolerance.

All substitute parts listed are active or previously qualified designs with documented electrical characteristics. Package compatibility (DO-35 axial through-hole) is maintained across all substitutes.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [mA]	Vf (Max) [V]	trr [ns]	Package	Product Status
BAY80-TAP	Vishay	120	250	1.07 @ 150 mA	50	DO-35	Obsolete
1N3595	Microchip Technology	125	200	1.0 @ 200 mA	3000	Axial	Active
1N3595TR	onsemi	150	200	1.0 @ 200 mA	3000	DO-35	Active
1N458A	Microchip Technology	150	150	1.0 @ 100 mA	—	DO-35	Active
BAY72TR	Fairchild Semiconductor	125	200	1.0 @ 100 mA	50	DO-35	Active
FDH300A	onsemi	125	200	1.0 @ 200 mA	—	DO-35	Active
FDH300ATR	onsemi	125	200	1.0 @ 200 mA	—	DO-35	Active
FDH333	Fairchild Semiconductor	125	200	1.05 @ 200 mA	—	DO-35	Obsolete
FDH333TR	onsemi	125	200	1.15 @ 300 mA	—	DO-35	Active
FDH3595	onsemi	125	200	1.0 @ 200 mA	—	DO-35	Active
FDH444TR	Fairchild Semiconductor	125	200	1.2 @ 300 mA	60	DO-35	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs)

The following parts are recommended as primary substitutes due to active product status and full compliance documentation:

1N3595TR (onsemi): Active status, 150 V rating provides voltage margin above the original 120 V specification, 200 mA current capacity, DO-35 package, ROHS3 compliant. Suitable for applications requiring enhanced reliability and long-term availability.
FDH300A / FDH300ATR (onsemi): Active status, 125 V rating meets minimum voltage requirement, 200 mA current capacity, DO-35 package, ROHS3 compliant. Available in both bulk and cut-tape packaging options.
FDH3595 (onsemi): Active status, 125 V rating, 200 mA current capacity, DO-35 package, ROHS3 compliant, 8 pF capacitance specification.
BAY72TR (Fairchild Semiconductor): Active status, 125 V rating, 200 mA current capacity, DO-35 package, 50 ns reverse recovery time matching the original part's fast recovery characteristic.

Secondary Substitutes (Limited Application)

1N458A (Microchip Technology): Active status, 150 V rating, but current capacity limited to 150 mA. Suitable only for applications where the circuit current requirement does not exceed 150 mA.
FDH333TR (onsemi): Active status, 125 V rating, 200 mA current capacity, DO-35 package. Forward voltage specification at 300 mA (1.15 V) differs from original part characterization.

Obsolete Parts (Not Recommended for New Designs)

FDH333 (Fairchild Semiconductor): Obsolete status. Replacement with active alternatives is required for long-term supply assurance.

Compliance and Certification

All recommended primary substitutes maintain ROHS3 compliance and REACH unaffected status consistent with the original BAY80-TAP. The 1N3595TR and FDH300A/FDH300ATR series provide the highest compliance documentation and inventory availability for production applications.

Frequently Asked Questions (FAQ)

Q: Can the BAY80-TAP be directly replaced with a 125 V rated diode?

A: Yes. A 125 V rated diode meets the minimum voltage requirement for the 120 V application. The BAY80-TAP operates at 120 V, and a 125 V substitute provides 5 V margin above the operating point. Parts such as FDH300A, FDH3595, and BAY72TR are direct replacements with 125 V ratings and 200 mA current capacity in DO-35 packages.

Q: What is the significance of the 150 V rated alternatives?

A: The 1N3595TR and 1N458A offer 150 V ratings, providing 30 V margin above the original 120 V specification. This additional voltage headroom is beneficial in applications subject to transient overvoltage conditions or where circuit design margins require enhanced voltage stress tolerance. However, 150 V rating is not required for standard 120 V operation.

Q: Why is the 1N458A listed as a secondary substitute despite active status?

A: The 1N458A is rated for 150 mA average rectified current, which is below the original BAY80-TAP specification of 250 mA. This part is suitable only for applications where the actual circuit current does not exceed 150 mA. For circuits requiring the full 250 mA capacity, this part is not appropriate.

Q: Are all substitute parts available in DO-35 package?

A: All listed substitutes are available in DO-35 through-hole package configuration, maintaining mechanical and electrical compatibility with the original BAY80-TAP. The 1N3595 from Microchip Technology is available in axial package; the onsemi 1N3595TR is available in DO-35 package.

Q: What is the difference between bulk and cut-tape packaging options?

A: Bulk packaging (FDH300A, FDH333, FDH3595) is supplied in loose component form suitable for manual assembly or tube packaging. Cut-tape packaging (FDH300ATR, FDH333TR, 1N3595TR) is supplied on continuous tape for automated pick-and-place assembly equipment. Electrical specifications are identical; packaging selection depends on assembly process requirements.

Q: How does reverse recovery time affect substitution?

A: The original BAY80-TAP specifies 50 ns reverse recovery time, indicating fast recovery characteristics. Most substitute parts (1N3595, 1N458A, FDH300A, FDH3595) specify 3 µs or unspecified recovery time, indicating small-signal or standard recovery characteristics. For applications sensitive to switching transients or high-frequency operation, BAY72TR (50 ns) or FDH444TR (60 ns) maintain fast recovery performance.

Q: Is ROHS3 compliance required for all substitutes?

A: ROHS3 compliance is documented for the primary recommended substitutes (1N3595TR, FDH300A, FDH300ATR, FDH3595, FDH333TR). The 1N458A and BAY72TR do not list ROHS3 status in the provided specifications. For applications requiring ROHS3 certification, select from the compliant alternatives.

Q: Can forward voltage differences between substitutes affect circuit operation?

A: Forward voltage specifications vary among substitutes (1.0 V to 1.2 V at different test currents). In rectifier applications with series resistances or voltage regulation, these differences are typically absorbed by circuit design margins. In precision analog circuits or low-voltage applications, forward voltage variation may require circuit re-evaluation. Consult application-specific circuit analysis for critical designs.

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