BAW62 Equivalent & Substitute Parts

Part Overview

The BAW62 is a general-purpose rectifier diode manufactured by onsemi, rated for 75 V DC reverse voltage and 300 mA average rectified current in a DO-35 through-hole package. This component is classified as obsolete, indicating that direct procurement from the original manufacturer is no longer available. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production, repair, and maintenance applications.

Substiute Parts

BAW62
onsemiIn Stock: 71133BAW62 Datasheet
BAW62
Current Part
1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
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1N914
Good-Ark SemiconductorIn Stock: 70051N914 Datasheet
1N914
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1N914B
Taiwan Semiconductor CorporationIn Stock: 202141N914B Datasheet
1N914B
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1N916
NTE Electronics, IncIn Stock: 11291N916 Datasheet
1N916
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1N916B
Fairchild SemiconductorIn Stock: 20361N916B Datasheet
1N916B
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1N4148-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 3002321N4148-TAP Datasheet
1N4148-TAP
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1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
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BAW62,133
NXP USA Inc.In Stock: 738BAW62,133 Datasheet
BAW62,133
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BAW62,143
NXP USA Inc.In Stock: 1092BAW62,143 Datasheet
BAW62,143
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BAW76-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 55066BAW76-TR Datasheet
BAW76-TR
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BAW62
Fairchild SemiconductorIn Stock: 71080BAW62 Datasheet
BAW62
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 300 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V
Capacitance @ Vr, F 2 pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max) 175 °C

Substitute Part Grouping Explanation

Substitution of the BAW62 is determined by the following critical parameters:

Voltage Rating (Vr): The substitute must support a minimum reverse voltage of 75 V. Parts rated at higher voltages (100 V) are acceptable as they provide additional safety margin. Parts rated below 75 V are not suitable.

Current Rating (Io): The substitute must support a minimum average rectified current of 300 mA. Parts rated at lower currents (200 mA, 150 mA, 75 mA) represent reduced current capacity and are acceptable only when circuit design permits lower current handling.

Speed Classification: The BAW62 is classified as Fast Recovery (≤ 500ns, > 200mA). Substitutes may be either Fast Recovery or Small Signal (≤ 200mA, Any Speed) classification, as both are suitable for general-purpose rectification applications.

Reverse Recovery Time (trr): The BAW62 specifies 4 ns. Substitutes with equal or lower trr values maintain switching performance characteristics.

Package Type: The BAW62 uses DO-35 (DO-204AH) axial through-hole packaging. All substitutes must use identical or compatible through-hole package configurations.

Forward Voltage (Vf): The BAW62 specifies 1 V maximum at 100 mA. Substitutes with equal or lower forward voltage are acceptable.

Substitutes are grouped into two categories:

Category A - Direct Equivalents (75 V, 300 mA): Parts matching both voltage and current ratings of the BAW62.

Category B - Reduced Current Substitutes (75 V, ≤ 300 mA): Parts with 75 V voltage rating but lower current capacity, suitable when circuit design accommodates reduced current handling.

Category C - Elevated Voltage Substitutes (≥ 100 V, variable current): Parts with higher voltage ratings and variable current ratings, providing enhanced voltage margin.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [mA] Vf (Max) @ If [V] Speed trr [ns] Package Product Status
BAW62 onsemi 75 300 1 @ 100 mA Fast Recovery ≤ 500ns, > 200mA 4 DO-35 Obsolete
1N4148-TAP Vishay General Semiconductor - Diodes Division 75 300 1 @ 10 mA Fast Recovery ≤ 500ns, > 200mA 8 DO-35 Active
1N4454 Microchip Technology 75 200 1 @ 10 mA Small Signal ≤ 200mA, Any Speed 4 DO-35 Active
BAW62,133 NXP USA Inc. 75 250 1 @ 100 mA Fast Recovery ≤ 500ns, > 200mA 4 ALF2 Active
BAW62,143 NXP USA Inc. 75 250 1 @ 100 mA Fast Recovery ≤ 500ns, > 200mA 4 ALF2 Active
BAW76-TR Vishay General Semiconductor - Diodes Division 50 300 1 @ 100 mA Fast Recovery ≤ 500ns, > 200mA 4 DO-35 Active
1N914 Good-Ark Semiconductor 100 75 1 @ 10 mA Small Signal ≤ 200mA, Any Speed 4 DO-35 Active
1N914B Taiwan Semiconductor Corporation 100 150 1 @ 100 mA Small Signal ≤ 200mA, Any Speed 4 DO-35 Active
1N916 NTE Electronics, Inc 100 200 1 @ 10 mA Small Signal ≤ 200mA, Any Speed 4 DO-35 Active
1N916B Fairchild Semiconductor 100 200 1 @ 20 mA Small Signal ≤ 200mA, Any Speed 4 DO-35 Active

Engineering Selection Recommendations

Primary Substitute - Category A (Direct Equivalent):

The 1N4148-TAP (Vishay General Semiconductor - Diodes Division) is the primary substitute for the BAW62. This part maintains the 75 V reverse voltage rating and 300 mA current capacity, matching the original specification. The 1N4148-TAP is classified as Active with ROHS3 compliance and AEC-Q101 automotive qualification. The reverse recovery time of 8 ns is slightly elevated compared to the BAW62 (4 ns) but remains within acceptable parameters for general-purpose rectification. This part is available in high volume (300,200 pcs in stock) in Cut Tape packaging.

Secondary Substitutes - Category B (Reduced Current, Same Voltage):

The 1N4454 (Microchip Technology) provides a 75 V rating with 200 mA current capacity. This part is suitable for applications where circuit design permits reduced current handling. The 1N4454 is Active and available in high volume (10,300 pcs in stock). The BAW62,133 and BAW62,143 (NXP USA Inc.) both provide 75 V rating with 250 mA current capacity and are classified as Active with ROHS3 compliance. These parts use ALF2 packaging rather than DO-35, requiring mechanical design verification for board compatibility.

Tertiary Substitutes - Category C (Elevated Voltage, Variable Current):

The 1N914 (Good-Ark Semiconductor), 1N914B (Taiwan Semiconductor Corporation), 1N916 (NTE Electronics, Inc), and 1N916B (Fairchild Semiconductor) all provide 100 V reverse voltage ratings with current capacities ranging from 75 mA to 200 mA. These parts are suitable for applications where higher voltage margin is required but current capacity is reduced. All are classified as Active. The 1N914B and 1N916B include ROHS3 compliance certification.

Not Recommended:

The BAW76-TR (Vishay General Semiconductor - Diodes Division) provides 300 mA current capacity but is rated for only 50 V reverse voltage, which is below the BAW62 specification of 75 V. This part is not suitable for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the 1N4148-TAP directly replace the BAW62 in all applications?

A: The 1N4148-TAP maintains the same 75 V reverse voltage and 300 mA current ratings as the BAW62, making it suitable for applications with identical electrical requirements. Both parts use DO-35 through-hole packaging. The reverse recovery time difference (8 ns vs. 4 ns) is not significant for general-purpose rectification. Verification of circuit performance is required for applications with specific switching speed requirements.

Q: What is the difference between Fast Recovery and Small Signal speed classifications?

A: Fast Recovery diodes are specified for applications requiring switching speeds of 500 ns or less with currents exceeding 200 mA. Small Signal diodes are specified for applications with currents of 200 mA or less and do not have a defined maximum switching speed. The BAW62 is classified as Fast Recovery. Substitutes classified as Small Signal (such as 1N914, 1N914B, 1N916, 1N916B) are acceptable for general-purpose rectification but may not be suitable for high-frequency switching applications.

Q: Can I use a 100 V rated diode in place of a 75 V rated diode?

A: Yes. A higher voltage rating provides additional safety margin and is acceptable for direct substitution. The 1N914, 1N914B, 1N916, and 1N916B all provide 100 V ratings and are suitable for applications originally designed for 75 V operation. However, these parts have reduced current capacity (75 mA to 200 mA) compared to the BAW62 (300 mA), which may limit their use in high-current applications.

Q: What is the significance of the DO-35 package specification?

A: The DO-35 package is a through-hole axial lead configuration with specific physical dimensions and lead spacing. All substitute parts must use compatible through-hole packaging to ensure mechanical fit on printed circuit boards. The BAW62,133 and BAW62,143 use ALF2 packaging, which has different physical dimensions and requires board design verification before substitution.

Q: Are there compliance or certification differences between substitute parts?

A: Yes. The 1N4148-TAP, 1N914B, and 1N916B are ROHS3 compliant. The 1N4454 and 1N916 are RoHS non-compliant. The BAW76-TR includes AEC-Q101 automotive qualification. All parts listed are REACH Unaffected and classified as EAR99 for export control purposes. Compliance requirements depend on the end application and regulatory environment.

Q: Why is the BAW62 classified as obsolete?

A: Obsolete status indicates that the original manufacturer (onsemi) has discontinued production and no longer accepts new orders. This classification necessitates the identification of active substitute parts to maintain design continuity. All recommended substitutes are classified as Active and are available from multiple suppliers.

Q: What is the impact of forward voltage (Vf) differences between parts?

A: Forward voltage affects power dissipation and voltage drop across the diode during conduction. The BAW62 specifies 1 V maximum at 100 mA. Substitute parts with equal or lower forward voltage maintain equivalent power dissipation characteristics. Differences in the test current (10 mA vs. 100 mA) reflect different measurement conditions but do not indicate functional incompatibility.

Q: Can I use the 1N4454 as a direct replacement for the BAW62?

A: The 1N4454 maintains the 75 V reverse voltage rating but has a reduced current capacity of 200 mA compared to the BAW62 (300 mA). This part is suitable for applications where circuit design permits 200 mA operation. For applications requiring the full 300 mA capacity, the 1N4454 is not a direct replacement.

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