BAS70-06 Equivalent & Substitute Parts

Part Overview

The BAS70-06 is an active Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Anode arrangement in a surface mount SOT-23-3 package. This component is designed for applications requiring low forward voltage drop and fast switching characteristics typical of Schottky technology. The part is ROHS3 compliant and REACH unaffected, with 131,400 units currently in stock. Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges for the intended application.

Substiute Parts

BAS70-06

Taiwan Semiconductor CorporationIn Stock: 131430BAS70-06 Datasheet

Current PartRFQ

BAW56LT1G

onsemiIn Stock: 305303BAW56LT1G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BAS70-06 is permissible when the following criteria are met:

Mandatory Compatibility Parameters:

• Diode Configuration: 1 Pair Common Anode
• Voltage - DC Reverse (Vr) (Max): 70 V or greater
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Mounting Type: Surface Mount

Performance Parameters:

• Current - Average Rectified (Io) (per Diode): Equal to or greater than 70 mA
• Operating Temperature - Junction: Range must encompass or exceed -55°C to 125°C
• Reverse Recovery Time (trr): Specification must be documented
• Current - Reverse Leakage @ Vr: Must be specified at rated voltage

The BAW56LT1G manufactured by onsemi meets all mandatory compatibility parameters and exceeds the current rating requirement. Both parts are ROHS3 compliant and REACH unaffected, ensuring regulatory equivalence.

Parameter Comparison

Engineering Selection Recommendations

BAS70-06 (Primary Selection)

The BAS70-06 is the specified component and remains the primary selection when available. Both the BAS70-06 and BAW56LT1G are active products with current manufacturing status and full regulatory compliance under ROHS3 and REACH standards.

BAW56LT1G (Substitute Selection)

The BAW56LT1G is a qualified substitute when BAS70-06 availability is constrained. The substitute part provides the following characteristics:

• Identical reverse voltage rating (70 V)
• Identical package and pinout (TO-236-3, SOT-23-3)
• Higher current capacity (200 mA versus 70 mA per diode)
• Extended operating temperature range (-55°C to 150°C versus -55°C to 125°C)
• Full regulatory compliance matching the primary part

The BAW56LT1G uses standard diode technology rather than Schottky technology. This results in a higher forward voltage drop (1.25 V @ 150 mA versus 1 V @ 15 mA) and higher reverse leakage current (2.5 µA @ 70 V versus 100 nA @ 50 V). These differences must be evaluated within the specific circuit application to determine suitability.

Both parts are ROHS3 compliant and REACH unaffected, ensuring equivalent regulatory status for procurement and supply chain purposes.

Frequently Asked Questions (FAQ)

Q: Can the BAW56LT1G directly replace the BAS70-06 in all applications?

A: The BAW56LT1G is mechanically and electrically compatible in terms of package, pinout, and reverse voltage rating. However, the technology difference (standard diode versus Schottky) results in higher forward voltage drop and reverse leakage current. Circuit-level evaluation is required to confirm suitability for the specific application.

Q: What is the primary difference between the BAS70-06 and BAW56LT1G?

A: The BAS70-06 uses Schottky technology with lower forward voltage drop (1 V @ 15 mA) and lower reverse leakage (100 nA @ 50 V). The BAW56LT1G uses standard diode technology with higher forward voltage drop (1.25 V @ 150 mA) and higher reverse leakage (2.5 µA @ 70 V). Both share identical reverse voltage (70 V), package (SOT-23-3), and configuration (1 Pair Common Anode).

Q: Are both parts available in the same package?

A: Yes. Both the BAS70-06 and BAW56LT1G are available in TO-236-3, SC-59, SOT-23-3 surface mount packages with identical pinout and mechanical compatibility.

Q: What is the current rating difference between these parts?

A: The BAS70-06 is rated for 70 mA average rectified current per diode. The BAW56LT1G is rated for 200 mA (DC) average rectified current per diode. The BAW56LT1G provides higher current capacity.

Q: Do both parts meet the same regulatory standards?

A: Yes. Both the BAS70-06 and BAW56LT1G are ROHS3 compliant and REACH unaffected, ensuring equivalent regulatory status.

Q: What is the operating temperature range for each part?

A: The BAS70-06 operates from -55°C to 125°C junction temperature. The BAW56LT1G operates from -55°C to 150°C junction temperature, providing a 25°C extended upper temperature range.

Q: How do the reverse recovery times compare?

A: The BAS70-06 has a reverse recovery time of 5 ns. The BAW56LT1G has a reverse recovery time of 6 ns. Both are classified as small signal diodes with recovery times suitable for high-frequency switching applications.