AUIRFS3207Z N-Channel 75V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRFS3207Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 120A continuous drain current in a D2PAK surface mount package. This device is classified as Obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The HEXFET® series component delivers 300W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current @ 25°C (Id)	120	A (Tc)
On-State Resistance @ 75A, 10V (Rds On Max)	4.1	mOhm
Gate Threshold Voltage @ 150µA (Vgs th Max)	4	V
Gate Charge @ 10V (Qg Max)	170	nC
Input Capacitance @ 50V (Ciss Max)	6920	pF
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Drive Voltage	10	V

Substitute Part Grouping Explanation

Substitution eligibility for the AUIRFS3207Z is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 75V minimum (allows 80V rated devices)
Continuous Drain Current (Id): 120A minimum at Tc
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage: 10V compatible operation

Secondary Compatibility Factors:

On-State Resistance (Rds On): ≤ 5.0 mOhm at rated current and gate voltage
Gate Charge (Qg): ≤ 180 nC at 10V
Input Capacitance (Ciss): ≤ 10500 pF at rated voltage
Power Dissipation: ≥ 230W (Tc)

Substitute parts are grouped into two categories: Direct Equivalents (matching 75V/120A specifications) and Functional Alternatives (meeting or exceeding electrical performance within compatible voltage/current ratings).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Package	Status
AUIRFS3207Z	Infineon	75	120	4.1	170	6920	300	D2PAK	Obsolete
IPB120N08S404ATMA1	Infineon	80	120	4.1	95	6450	179	D2PAK	Last Time Buy
STB160N75F3	STMicroelectronics	75	120	4.0	85	6750	330	D2PAK	Active
IXFA230N075T2	IXYS	75	230	4.2	178	10500	480	D2PAK	Active
IXFA230N075T2-7	IXYS	75	230	4.2	178	10500	480	TO-263-7	Active
FDB045AN08A0	onsemi	75	90	4.5	138	6600	310	D2PAK	Active
PSMN005-75B,118	Nexperia	75	75	5.0	165	8250	230	D2PAK	Active
BUK764R4-60E,118	Nexperia	60	100	4.5	82	6230	234	D2PAK	Active
IXTA200N055T2	IXYS	55	200	4.2	109	6800	360	D2PAK	Active
IPB049NE7N3GATMA1	Infineon	75	80	4.9	68	4750	150	D2PAK	Obsolete

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Recommended Primary Choice):

STB160N75F3 (STMicroelectronics) is the optimal substitute for AUIRFS3207Z. This device matches the 75V/120A electrical specification exactly, operates within the identical temperature range (-55°C to 175°C), and maintains D2PAK packaging compatibility. The STB160N75F3 demonstrates superior on-state resistance (4.0 mOhm vs. 4.1 mOhm) and lower gate charge (85 nC vs. 170 nC), resulting in improved switching efficiency. Product status is Active with full manufacturing support and ROHS3 compliance.

Tier 2 - Functional Equivalents (Higher Current Capability):

IXFA230N075T2 and IXFA230N075T2-7 (IXYS) provide 75V rating with 230A continuous drain current, exceeding the original 120A specification. These devices deliver superior power dissipation (480W vs. 300W) and maintain gate drive compatibility at 10V. The standard IXFA230N075T2 uses TO-263AA packaging; the IXFA230N075T2-7 variant uses TO-263-7 configuration. Both are Active status with full production availability.

Tier 3 - Voltage-Rated Alternatives:

IPB120N08S404ATMA1 (Infineon) provides 80V rating with 120A current matching, representing a conservative voltage margin increase. This OptiMOS™ series device exhibits lower gate charge (95 nC) and reduced input capacitance (6450 pF), beneficial for high-frequency switching applications. Product status is Last Time Buy, indicating limited future availability.

Tier 4 - Reduced Current Capability (Cost-Optimized):

PSMN005-75B,118 (Nexperia) maintains 75V rating with 75A continuous current, suitable for applications where full 120A capacity is not required. This TrenchMOS™ device is Active status with highest inventory availability (10,000 pcs). On-state resistance is 5.0 mOhm at 25A, acceptable for lower-current designs.

Not Recommended:

BUK764R4-60E,118 (60V rating) and IXTA200N055T2 (55V rating) operate below the original 75V specification and are suitable only for applications with reduced voltage headroom requirements.

Frequently Asked Questions (FAQ)

Q1: Can I use STB160N75F3 as a direct drop-in replacement for AUIRFS3207Z?

Yes. STB160N75F3 matches the critical electrical parameters: 75V Vdss, 120A continuous drain current, D2PAK package, and -55°C to 175°C operating range. The device is pin-compatible and requires no circuit modifications. Gate drive voltage remains 10V.

Q2: What is the difference between IXFA230N075T2 and IXFA230N075T2-7?

Both devices share identical electrical specifications (75V, 230A, 4.2 mOhm Rds On). The primary difference is package configuration: IXFA230N075T2 uses TO-263AA (standard D2PAK), while IXFA230N075T2-7 uses TO-263-7 (7-lead variant). Verify PCB footprint compatibility before selection.

Q3: Why does IPB120N08S404ATMA1 have lower gate charge than AUIRFS3207Z?

IPB120N08S404ATMA1 employs OptiMOS™ technology with optimized gate structure, resulting in 95 nC gate charge versus 170 nC in the original HEXFET® design. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications, though this device is Last Time Buy status.

Q4: Is PSMN005-75B,118 suitable for my 120A application?

PSMN005-75B,118 is rated for 75A continuous current, not 120A. Use this device only if your actual application current requirement is ≤75A. For full 120A operation, select STB160N75F3, IXFA230N075T2, or IPB120N08S404ATMA1.

Q5: Can I use BUK764R4-60E,118 in a 75V circuit?

No. BUK764R4-60E,118 is rated for maximum 60V Vdss. Using this device in a 75V circuit exceeds its voltage rating and creates reliability risk. Select a 75V-rated alternative such as STB160N75F3 or PSMN005-75B,118.

Q6: What does "Last Time Buy" status mean for IPB120N08S404ATMA1?

Last Time Buy indicates the manufacturer has announced end-of-life production. Existing inventory is available for purchase, but no new manufacturing runs are planned. For long-term designs, select Active status alternatives such as STB160N75F3.

Q7: Are all substitute parts ROHS3 compliant?

Yes. All listed substitute parts carry ROHS3 Compliant status and REACH Unaffected designation, meeting environmental and regulatory requirements equivalent to the original AUIRFS3207Z.

Q8: How do I verify thermal performance with a substitute device?

Compare Power Dissipation (Pd Max) and On-State Resistance (Rds On). STB160N75F3 provides 330W dissipation versus 300W original, with lower Rds On (4.0 vs. 4.1 mOhm), resulting in reduced junction temperature at equivalent current levels. Recalculate thermal design margins using the substitute device's Rds On and Pd specifications.

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