AUIRFB3207 N-Channel MOSFET 75V 75A TO-220AB Equivalent & Substitute Parts

Part Overview

The AUIRFB3207 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 75A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. The HEXFET® series device delivers 300W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 75A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	260	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 50V	7600	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitute parts for the AUIRFB3207 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 75A at 25°C
Package Type: Must be TO-220-3 Through Hole configuration
Gate Voltage Range (Vgs): Must accommodate ±20V
Operating Temperature Range: Must span -55°C to 175°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Must support thermal requirements

Substitute parts are grouped into three categories based on voltage and current ratings relative to the AUIRFB3207 baseline specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
AUIRFB3207	Infineon	75	75	4.5 @ 75A, 10V	260 @ 10V	7600 @ 50V	300	TO-220-3	Obsolete
STP76NF75	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	3700 @ 25V	300	TO-220-3	Active
IXTP170N075T2	IXYS	75	170	5.4 @ 50A, 10V	109 @ 10V	6860 @ 25V	360	TO-220-3	Active
FDP047AN08A0	onsemi	75	15	4.7 @ 80A, 10V	138 @ 10V	6600 @ 25V	310	TO-220-3	Not For New Designs
FDP038AN06A0-F102	onsemi	60	80	3.8 @ 80A, 10V	124 @ 10V	6400 @ 25V	310	TO-220-3	Active
IPP120N08S404AKSA1	Infineon	80	120	4.4 @ 100A, 10V	95 @ 10V	6450 @ 25V	179	TO-220-3	Obsolete
STP315N10F7	STMicroelectronics	100	180	2.7 @ 60A, 10V	180 @ 10V	12800 @ 25V	315	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitute: STP76NF75 (STMicroelectronics)

The STP76NF75 provides direct voltage and current rating equivalence at 75V/80A with identical 300W power dissipation. This part maintains the same TO-220-3 package configuration and operating temperature range. Product Status is Active with RoHS3 compliance, ensuring long-term availability and regulatory alignment. The STripFET™ II series technology delivers comparable on-state resistance performance.

Secondary Substitute: IXTP170N075T2 (IXYS)

The IXTP170N075T2 maintains the 75V voltage rating while providing significantly higher current capability at 170A. This part is suitable for applications requiring current margin or thermal headroom. Product Status is Active with AEC-Q101 automotive qualification and RoHS3 compliance. The TrenchT2™ technology offers lower gate charge (109 nC) compared to the AUIRFB3207 (260 nC), reducing switching losses.

Voltage-Reduced Substitute: FDP038AN06A0-F102 (onsemi)

The FDP038AN06A0-F102 operates at 60V drain-to-source voltage, suitable only for applications with maximum operating voltages below 60V. This part delivers 80A continuous current with superior on-state resistance of 3.8 mOhm. Product Status is Active with RoHS3 compliance. Use only when circuit design permits reduced voltage rating.

Higher Voltage Substitute: STP315N10F7 (STMicroelectronics)

The STP315N10F7 provides 100V voltage rating with 180A current capability, suitable for applications requiring voltage margin. This part is Active with AEC-Q101 automotive qualification and RoHS3 compliance. The DeepGATE™ and STripFET™ VII series technology delivers the lowest on-state resistance at 2.7 mOhm, optimizing thermal performance in high-current applications.

Not Recommended for New Designs:

FDP047AN08A0 (onsemi) carries Product Status "Not For New Designs" and exhibits significantly reduced current rating (15A) compared to the AUIRFB3207 (75A), making it unsuitable for direct substitution.

IPP120N08S404AKSA1 (Infineon) is classified as Obsolete with reduced power dissipation (179W) and is not recommended for new applications.

Frequently Asked Questions (FAQ)

Q: Can the STP76NF75 directly replace the AUIRFB3207 in existing designs?

A: Yes. The STP76NF75 matches the AUIRFB3207 in voltage rating (75V), exceeds the current requirement (80A vs. 75A), maintains identical power dissipation (300W), and uses the same TO-220-3 package. Both devices operate across -55°C to 175°C. The primary difference is on-state resistance; the STP76NF75 exhibits 11 mOhm at 40A versus 4.5 mOhm at 75A for the AUIRFB3207. Verify thermal performance in your specific application.

Q: What is the significance of the voltage rating difference between the AUIRFB3207 (75V) and STP315N10F7 (100V)?

A: The 100V rating of the STP315N10F7 provides additional voltage margin for transient overvoltage conditions but increases on-state resistance and input capacitance. Use the 100V device only when circuit design requires voltage headroom beyond 75V. For applications with maximum operating voltages at or below 75V, the 75V-rated devices (STP76NF75 or IXTP170N075T2) are preferred to minimize conduction losses.

Q: Why does the FDP038AN06A0-F102 have a lower voltage rating (60V) than the AUIRFB3207 (75V)?

A: The FDP038AN06A0-F102 is designed for lower-voltage applications and cannot be used in circuits where the drain-to-source voltage may exceed 60V. This part is suitable only for applications with confirmed maximum operating voltages below 60V. Exceeding the voltage rating will result in device failure.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The AUIRFB3207 requires 260 nC at 10V, while the IXTP170N075T2 requires only 109 nC. Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive power. Select based on your gate driver capability and switching frequency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All Active-status substitute parts listed (STP76NF75, IXTP170N075T2, FDP038AN06A0-F102, STP315N10F7) are RoHS3 compliant. The obsolete parts (AUIRFB3207, IPP120N08S404AKSA1) and the "Not For New Designs" part (FDP047AN08A0) have REACH Unaffected status but should not be specified for new designs due to availability and regulatory considerations.

Q: What thermal considerations apply when selecting between these substitutes?

A: Power dissipation ratings are: AUIRFB3207 (300W), STP76NF75 (300W), IXTP170N075T2 (360W), FDP038AN06A0-F102 (310W), and STP315N10F7 (315W). On-state resistance directly affects heat generation; lower Rds On values reduce conduction losses. The STP315N10F7 offers the lowest Rds On (2.7 mOhm) but operates at higher voltage. Verify thermal design margins with your specific current and duty cycle requirements.

Q: Can I use the IPP120N08S404AKSA1 as a substitute?

A: The IPP120N08S404AKSA1 is classified as Obsolete and exhibits reduced power dissipation (179W) compared to the AUIRFB3207 (300W). Additionally, the current rating specification (120A @ Tc) is measured at different conditions than the AUIRFB3207. This part is not recommended for substitution due to obsolete status and thermal limitations.

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