ATP106-TL-H Equivalent & Substitute Parts

Part Overview

The ATP106-TL-H is a P-Channel 40V 30A MOSFET manufactured by onsemi in ATPAK surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The ATP106-TL-H delivers 40W power dissipation at case temperature and operates at a maximum junction temperature of 150°C. Equivalent alternatives must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate charge specifications while accommodating different package formats.

Substiute Parts

ATP106-TL-H

onsemiIn Stock: 18480ATP106-TL-H Datasheet

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FDD4685

onsemiIn Stock: 50499FDD4685 Datasheet

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NP20P04SLG-E1-AY

Renesas Electronics CorporationIn Stock: 15350NP20P04SLG-E1-AY Datasheet

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IXTY48P05T

IXYSIn Stock: 15403IXTY48P05T Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the ATP106-TL-H is determined by electrical parameter compatibility and package accommodation. The primary electrical criteria are:

Electrical Compatibility Requirements:

• Drain-Source Voltage (Vdss) must equal or exceed 40V
• Continuous Drain Current (Id) must support 30A operation
• On-Resistance (Rds On) must not exceed 25mOhm at rated conditions
• Gate Charge (Qg) and Input Capacitance (Ciss) must remain within acceptable switching performance ranges
• Gate-Source Voltage (Vgs) rating must accommodate ±20V operation
• Maximum junction temperature must support 150°C operation

Package Considerations: The ATP106-TL-H uses ATPAK packaging. Substitute parts may employ alternative surface mount packages (TO-252AA/DPAK, TO-252) provided PCB layout and thermal management accommodate the different form factor and lead configuration.

Compliance Requirements: All substitute parts must maintain ROHS3 compliance, MSL Level 1 rating, and REACH unaffected status to ensure regulatory and supply chain continuity.

Parameter Comparison

Engineering Selection Recommendations

FDD4685 (onsemi): The FDD4685 is an active product offering equivalent 40V Vdss rating with 32A continuous drain current at case temperature. On-resistance of 27mOhm at 8.4A, 10V is comparable to the ATP106-TL-H specification. Gate charge of 27nC at 5V and input capacitance of 2380pF at 20V indicate slightly higher capacitive loading. Power dissipation capability of 69W at case temperature exceeds the original 40W specification. The TO-252AA (DPAK) package requires PCB layout modification from the original ATPAK format. ROHS3 compliance and MSL Level 1 rating ensure regulatory continuity. This substitute is suitable for applications where the higher current rating and power dissipation capability provide design margin.

NP20P04SLG-E1-AY (Renesas Electronics Corporation): The NP20P04SLG-E1-AY is an active product with 40V Vdss and 20A continuous drain current at case temperature. On-resistance of 25mOhm at 10A, 10V matches the ATP106-TL-H specification exactly. Gate charge of 34nC at 10V and input capacitance of 1650pF at 10V remain within acceptable switching performance parameters. Maximum junction temperature of 175°C exceeds the original 150°C rating, providing thermal margin. Power dissipation of 38W at case temperature is slightly below the original 40W specification. The TO-252 (MP-3ZK) package requires PCB layout modification. ROHS3 compliance and MSL Level 1 rating maintain regulatory requirements. This substitute is suitable for applications requiring electrical parameter equivalence with enhanced thermal performance.

IXTY48P05T (IXYS): The IXTY48P05T is an active product with 50V Vdss rating and 48A continuous drain current at case temperature, exceeding the ATP106-TL-H electrical specifications. On-resistance of 30mOhm at 24A, 10V is slightly elevated compared to the original 25mOhm specification. Gate charge of 53nC at 10V and input capacitance of 3660pF at 25V indicate significantly higher capacitive loading, affecting switching speed and gate drive requirements. Power dissipation capability of 150W at case temperature substantially exceeds the original specification. Maximum gate-source voltage of ±15V is reduced from the original ±20V rating. The TO-252AA (DPAK) package requires PCB layout modification. ROHS3 compliance and MSL Level 1 rating ensure regulatory continuity. This substitute is suitable for applications requiring higher current and voltage headroom with acceptance of increased gate charge and capacitance.

Frequently Asked Questions (FAQ)

Q: Can the FDD4685 directly replace the ATP106-TL-H without circuit modification?

A: The FDD4685 provides electrical equivalence in Vdss, Rds On, and gate voltage ratings. However, the package change from ATPAK to TO-252AA (DPAK) requires PCB layout modification. The higher input capacitance (2380pF versus 1380pF) may require gate drive circuit adjustment to maintain switching performance. Thermal management design must accommodate the different package form factor and lead configuration.

Q: Is the NP20P04SLG-E1-AY suitable for 30A continuous operation?

A: The NP20P04SLG-E1-AY is rated for 20A continuous drain current at case temperature, which is below the ATP106-TL-H 30A specification. This substitute is suitable for applications operating at or below 20A. Applications requiring sustained 30A operation should use the FDD4685 (32A at Tc) or IXTY48P05T (48A at Tc).

Q: What are the implications of the IXTY48P05T higher gate charge specification?

A: The IXTY48P05T gate charge of 53nC at 10V is significantly higher than the ATP106-TL-H specification of 29nC at 10V. This requires proportionally greater gate drive current and energy to achieve equivalent switching speed. Gate drive circuits must be evaluated for adequate current sourcing capability. Switching losses will increase proportionally with gate charge, affecting overall circuit efficiency.

Q: Are all substitute parts compatible with ±20V gate-source voltage operation?

A: The FDD4685 and NP20P04SLG-E1-AY support ±20V Vgs operation, matching the ATP106-TL-H specification. The IXTY48P05T is rated for ±15V Vgs maximum, which is 5V lower than the original specification. Applications utilizing ±20V gate drive signals must use FDD4685 or NP20P04SLG-E1-AY to maintain full gate voltage compliance.

Q: What package considerations apply when substituting the ATP106-TL-H?

A: The ATP106-TL-H uses ATPAK packaging with a specific lead configuration and thermal tab design. All substitute parts employ TO-252 variants (DPAK/SC-63), which have different lead spacing, tab dimensions, and thermal characteristics. PCB layout must be redesigned to accommodate the new package footprint. Thermal vias and copper area around the tab may require adjustment to maintain equivalent thermal performance.

Q: Do all substitute parts maintain the same compliance certifications?

A: All substitute parts listed are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 (Unlimited) moisture sensitivity ratings, matching the ATP106-TL-H certifications. ECCN and HTSUS classifications remain consistent across all parts. Regulatory and supply chain requirements are maintained with any of the listed substitutes.

Q: Which substitute provides the closest electrical equivalence to the ATP106-TL-H?

A: The NP20P04SLG-E1-AY provides the closest electrical equivalence with identical 40V Vdss, matching 25mOhm Rds On specification, and ±20V Vgs rating. However, its 20A continuous current rating is below the original 30A specification. The FDD4685 provides superior current handling (32A at Tc) with comparable on-resistance (27mOhm) and maintains ±20V Vgs compatibility, making it the preferred substitute for applications requiring the full 30A current specification.