Equivalent & Substitute Parts Reference for APT8014L2FLLG

Part Overview

APT8014L2FLLG is an N-channel MOSFET manufactured by Microchip Technology, classified under Transistors, FETs, MOSFETs. It offers a drain to source voltage of 800 V and a continuous drain current of 52A (Tc), packaged in a TO-264-3, TO-264AA through-hole case. As component availability and application requirements can change, referencing alternative models is essential to ensure design flexibility, continuous manufacturing, and replacement compatibility.

Key Parameters

Parameter	APT8014L2FLLG	IXFB60N80P	IXFK48N60Q3
Drain to Source Voltage (Vdss)	800 V	800 V	600 V
Continuous Drain Current (Id) @ 25°C	52A (Tc)	60A (Tc)	48A (Tc)
Rds On (Max) @ Id, Vgs	160mOhm @ 26A, 10V	140mOhm @ 30A, 10V	140mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA	5V @ 8mA	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	285 nC @ 10 V	250 nC @ 10 V	140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7238 pF @ 25 V	18000 pF @ 25 V	7020 pF @ 25 V
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute selection is determined by matching the following parameters critical to MOSFET application in power electronics:

Drain to Source Voltage (Vdss)
Continuous Drain Current (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Package / Case
RoHS Status
Moisture Sensitivity Level (MSL)

Only parts meeting the required thresholds and having compatible packaging and compliance certifications are listed.

Parameter Comparison

Parameter	APT8014L2FLLG	IXFB60N80P	IXFK48N60Q3
Drain to Source Voltage (Vdss)	800 V	800 V	600 V
Continuous Drain Current (Id) @ 25°C	52A (Tc)	60A (Tc)	48A (Tc)
Rds On (Max) @ Id, Vgs	160mOhm @ 26A, 10V	140mOhm @ 30A, 10V	140mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA	5V @ 8mA	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	285 nC @ 10 V	250 nC @ 10 V	140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7238 pF @ 25 V	18000 pF @ 25 V	7020 pF @ 25 V
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

All listed substitute MOSFETs (IXFB60N80P, IXFK48N60Q3) are active and share ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). These parameters conform to environmental and safety requirements for use in various electronic systems. Substitute selection is defined strictly by product status and compliance as provided.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria in selecting a substitute for APT8014L2FLLG?
A1: Substitute selection is based on matching drain to source voltage, continuous drain current, Rds On, gate charge, input capacitance, package type, mounting method, and compliance certifications.

Q2: Are substitute MOSFETs compatible with the original TO-264-3, TO-264AA footprint?
A2: All listed substitutes (IXFB60N80P, IXFK48N60Q3) use the TO-264-3, TO-264AA through-hole package, supporting direct mechanical and solder compatibility.

Q3: Is RoHS compliance matched across all alternatives?
A3: Yes, APT8014L2FLLG and both substitutes are ROHS3 Compliant.

Q4: How is Moisture Sensitivity Level (MSL) addressed in substitution?
A4: MSL 1 (Unlimited) is matched for all parts per provided specifications.

Q5: Why is continuous drain current (Id) a key substitution parameter?
A5: The continuous drain current rating at 25°C determines the MOSFET's suitability for the target application under specified thermal conditions. Only substitutes meeting or approaching this specification are listed.

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