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Equivalent & Substitute Parts for APT6013LLLG
Part Overview
APT6013LLLG is an N-Channel Power MOSFET produced by Microchip Technology, classified under Transistors, FETs, MOSFETs. The device offers a drain-to-source voltage rating of 600 V and a continuous drain current of 43A (Tc), with a maximum Rds On of 130mOhm @ 21.5A, 10V. Its TO-264 through-hole package supports high power dissipation up to 565W (Tc). This device is in active production and RoHS3 compliant. Substitution may be required to address supply chain constraints, differing specification needs, or package availability.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 21.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5630 pF @ 25V |
| Power Dissipation (Max) | 565W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264 [L] |
| Package / Case | TO-264-3, TO-264AA |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitution is determined by strict matching of essential electrical and mechanical parameters per product category, including:
- Device type and technology (N-Channel MOSFET, through-hole mounting)
- Drain to Source Voltage (Vdss)
- Continuous Drain Current (Id)
- Rds On (Max) at specified current and gate voltage
- Gate Charge and Input Capacitance ratings
- Maximum Gate-Source Voltage (Vgs Max)
- Maximum Power Dissipation
- Package compatibility (TO-264, TO-264AA, or direct equivalents)
- Regulatory compliance status and moisture sensitivity
Parameter Comparison
| Parameter | APT6013LLLG Microchip Technology |
IPW60R099CPAFKSA1 Infineon Technologies |
IXFB60N80P IXYS |
IXFK48N60Q3 IXYS |
|---|---|---|---|---|
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 800 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) | 31A (Tc) | 60A (Tc) | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 21.5A, 10V | 105mOhm @ 18A, 10V | 140mOhm @ 30A, 10V | 140mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 3.5V @ 1.2mA | 5V @ 8mA | 6.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10V | 80 nC @ 10V | 250 nC @ 10V | 140 nC @ 10V |
| Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5630 pF @ 25V | 2800 pF @ 100V | 18000 pF @ 25V | 7020 pF @ 25V |
| Power Dissipation (Max) | 565W (Tc) | 255W (Tc) | 1250W (Tc) | 1000W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-264 [L] | PG-TO247-3 | PLUS264™ | TO-264AA (IXFK) |
| Package / Case | TO-264-3, TO-264AA | TO-247-3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Active | Active |
Engineering Selection Recommendations
All parts listed are classified as active in their product status and are ROHS3 compliant. Each device is rated MSL 1 (Unlimited) and has a REACH Unaffected status. Substitute parts listed are suitable for direct selection based on their compliance and regulatory conformity, as well as continued manufacturer support.
Frequently Asked Questions (FAQ)
Q1: Which parameters are required for substituting a MOSFET like APT6013LLLG?
A1: Substitution requires matching key parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate-source voltage (Vgs Max), power dissipation, and package compatibility.
Q2: How important is package compatibility in selecting a substitute?
A2: Package compatibility is essential for mechanical fit and thermal performance. Models such as those in TO-264, TO-264AA, or PLUS264 packages conform to the specified category requirements.
Q3: Are all listed alternatives compliant with environmental and regulatory standards?
A3: All listed alternatives are ROHS3 compliant, MSL 1 (Unlimited), and REACH unaffected.
Q4: Is product status important for substitute selection?
A4: Only parts listed as “active” should be considered, ensuring ongoing manufacturer support.
Q5: Can substitutes with high drain-to-source voltage (Vdss) be used?
A5: Substitutes matching or exceeding the specified Vdss may be considered, as specified in the provided technical parameters.
Q6: Which mounting types are supported in the substitute list?
A6: Only through-hole mounting types are listed, matching the main part.
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