Request Quote
(Ships tomorrow)
APT56F60B2 Equivalent & Substitute Parts Reference
Part Overview
The Microchip Technology APT56F60B2 is an active N-Channel MOSFET in the Transistors, FETs, MOSFETs category, designed for high-voltage and high-current switching applications. The device features a 600 V drain-to-source voltage, 60A continuous drain current, and is housed in a T-MAX™ [B2] through-hole package (TO-247-3 Variant). For applications requiring compatible electrical and mechanical characteristics, it is necessary to identify alternative models due to factors such as availability, cost, or standardization across designs. Substitute models must match the main functional, voltage, current, and package parameters.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | APT56F60B2 |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
| Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution logic in the Transistors, FETs, MOSFETs category is strictly based on the following parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, gate charge (Qg), package/case, mounting type, and product compliance certifications. All substitute parts listed share the same N-Channel MOSFET technology and through-hole TO-247-3 mounting, with Vdss, Id, and other performance criteria typically within category-typical tolerances.
Key parameters for substitution consideration:
- FET Type (N-Channel)
- MOSFET Technology
- Drain to Source Voltage (Vdss)
- Current - Continuous Drain (Id)
- Rds On (Max)
- Drive Voltage
- Gate Charge (Qg)
- Package / Case (TO-247-3 and variants)
- Mounting Type (Through Hole)
- Compliance (ROHS3, REACH, MSL)
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vdss (Drain-Source Voltage) | Id @ 25°C (Continuous Drain Current) | Rds On (Max) @ Id, Vgs | Drive Voltage | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | REACH Status | MSL | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT56F60B2 | Microchip Technology | 600 V | 60A (Tc) | 110mOhm @ 28A, 10V | 10V | 280 nC @ 10 V | 5V @ 2.5mA | ±30V | 11300 pF @ 25 V | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | ROHS3 | REACH Unaffected | 1 (Unlimited) | Active |
| IPW60R099C6FKSA1 | Infineon Technologies | 600 V | 37.9A (Tc) | 99mOhm @ 18.1A, 10V | 10V | 119 nC @ 10 V | 3.5V @ 1.21mA | ±20V | 2660 pF @ 100 V | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Not For New Designs |
| IPW60R099CPAFKSA1 | Infineon Technologies | 600 V | 31A (Tc) | 105mOhm @ 18A, 10V | 10V | 80 nC @ 10 V | 3.5V @ 1.2mA | ±20V | 2800 pF @ 100 V | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Active |
| IPW60R099CPFKSA1 | Infineon Technologies | 650 V | 31A (Tc) | 99mOhm @ 18A, 10V | 10V | 80 nC @ 10 V | 3.5V @ 1.2mA | ±20V | 2800 pF @ 100 V | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Not For New Designs |
| IPW60R125C6FKSA1 | Infineon Technologies | 600 V | 30A (Tc) | 125mOhm @ 14.5A, 10V | 10V | 96 nC @ 10 V | 3.5V @ 960µA | ±20V | 2127 pF @ 100 V | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Not For New Designs |
| IXFR64N60Q3 | IXYS | 600 V | 42A (Tc) | 104mOhm @ 32A, 10V | 10V | 190 nC @ 10 V | 6.5V @ 4mA | ±30V | 9930 pF @ 25 V | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Active |
| SPW32N50C3FKSA1 | Infineon Technologies | 560 V | 32A (Tc) | 110mOhm @ 20A, 10V | 10V | 170 nC @ 10 V | 3.9V @ 1.8mA | ±20V | 4200 pF @ 25 V | 284W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Active |
| SPW35N60CFDFKSA1 | Infineon Technologies | 600 V | 34.1A (Tc) | 118mOhm @ 21.6A, 10V | 10V | 212 nC @ 10 V | 5V @ 1.9mA | ±20V | 5060 pF @ 25 V | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Not For New Designs |
| STW34NM60N | STMicroelectronics | 600 V | 29A (Tc) | 105mOhm @ 14.5A, 10V | 10V | 80 nC @ 10 V | 4V @ 250µA | ±25V | 2722 pF @ 100 V | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | ROHS3 | REACH Unaffected | 1 (Unlimited) | Active |
Engineering Selection Recommendations
From a compliance and certification perspective, all listed substitute models are ROHS3 Compliant and REACH Unaffected, with Moisture Sensitivity Level 1 (Unlimited). Product status varies; select only those marked "Active" for applications requiring full manufacturer support and ongoing availability. Ensure that the chosen substitute retains the same package/case specification (TO-247-3 variant or compatible) and mounting type (Through Hole).
Frequently Asked Questions (FAQ)
Q1: What are the main parameters to verify when selecting a substitute MOSFET for APT56F60B2?
A1: Required parameters include FET type (N-Channel), technology (MOSFET), drain-to-source voltage (Vdss), current rating (Id), Rds On, drive voltage, gate charge (Qg), package/case, mounting type, and compliance (ROHS3, REACH).
Q2: Are all substitute models available in a compatible through-hole TO-247-3 package?
A2: Yes, all listed substitutes use TO-247-3 or TO-247-3 variant packages and are through-hole mount.
Q3: Is ROHS3 compliance consistent across all substitute options?
A3: ROHS3 compliance and REACH unaffected certification are present on all substitute parts listed.
Q4: Can a substitute MOSFET with a lower Id or higher Rds On be used?
A4: Substitution is permitted strictly within the provided parameters; selection must meet the required application criteria for Id and Rds On according to the datasheets.
Q5: How does product status affect substitute selection?
A5: Only "Active" status components are suitable for new designs and long-term sourcing. "Not For New Designs" indicates limited future availability.
Q6: Are package case variants interchangeable within the TO-247-3 category for substitution?
A6: Substitute models must match the specified package/case type per mechanical compatibility requirements in the category.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts



