Equivalent & Substitute Parts for APT55M50JFLL

Part Overview

APT55M50JFLL is a N-Channel Power MOSFET from Microsemi Corporation, listed under the category Transistors, FETs, MOSFETs. This device features a Drain to Source Voltage (Vdss) of 550 V, continuous drain current (Id) of 77A (Tc), and operates with a maximum Rds On of 50mOhm at 38.5A, 10V. The product is currently marked as Obsolete, thus necessitating the identification and evaluation of substitute models for new designs and ongoing maintenance. Alternate parts must maintain the key electrical performance and mechanical compatibility within the same product category and package type.

Key Parameters

Parameter	APT55M50JFLL
Manufacturer	Microsemi Corporation
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550 V
Current - Continuous Drain (Id) @ 25°C	77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	50mOhm @ 38.5A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	265 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	12400 pF @ 25 V
Power Dissipation (Max)	694W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	ISOTOP®
Package / Case	SOT-227-4, miniBLOC
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Substitute Part Grouping Explanation

The substitute grouping for APT55M50JFLL is determined solely by matching essential electrical and mechanical parameters within the Transistors, FETs, MOSFETs category. Key parameters for equivalence include:

FET Type (N-Channel)
Technology (MOSFET, Metal Oxide)
Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Maximum Rds On at specified Id and Vgs
Gate Charge (Qg)
Maximum Gate to Source Voltage (Vgs)
Input Capacitance (Ciss)
Power Dissipation (Max)
Operating Temperature Range
Mounting Type (Chassis Mount)
Package / Case (SOT-227-4, miniBLOC)
Compliance and Status Indicators

All substitutes strictly share these critical specifications, ensuring compatibility for electrical and mechanical interchangeability.

Parameter Comparison

Parameter	APT55M50JFLL	IXFN100N50P	IXFN100N50Q3	IXFN80N50Q3
Manufacturer	Microsemi Corporation	IXYS	IXYS	IXYS
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	77A (Tc)	90A (Tc)	82A (Tc)	63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	50mOhm @ 38.5A, 10V	49mOhm @ 50A, 10V	49mOhm @ 50A, 10V	65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA	5V @ 8mA	6.5V @ 8mA	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	265 nC @ 10 V	240 nC @ 10 V	255 nC @ 10 V	200 nC @ 10 V
Vgs (Max)	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	12400 pF @ 25 V	20000 pF @ 25 V	13800 pF @ 25 V	10000 pF @ 25 V
Power Dissipation (Max)	694W (Tc)	1040W (Tc)	960W (Tc)	780W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

APT55M50JFLL is listed as Obsolete. Substitute alternatives IXFN100N50P, IXFN100N50Q3, and IXFN80N50Q3 are marked as Active and share the same compliance criteria: Moisture Sensitivity Level (MSL) 1 (Unlimited), REACH Unaffected, ECCN EAR99, and harmonized HTSUS codes. All substitute parts are fully compliant and suitable for selection for applications requiring continued support, maintenance, or new designs within the original allowed parameters.

Frequently Asked Questions (FAQ)

Q1: What are the primary parameters to consider when selecting substitutes for APT55M50JFLL?
A1: Selection is based on FET type, technology, Drain to Source Voltage (Vdss), continuous drain current (Id), Rds On, gate charge (Qg), input capacitance (Ciss), maximum gate voltage (Vgs), mounting type, package/case, and compliance indicators.

Q2: Are the substitute models IXFN100N50P, IXFN100N50Q3, and IXFN80N50Q3 compatible with the SOT-227-4, miniBLOC package?
A2: All listed substitutes use the SOT-227-4, miniBLOC package, supporting direct mechanical compatibility.

Q3: How do electrical characteristics like Vdss and Id compare across the alternatives?
A3: Substitutes offer Drain to Source Voltages of 500 V versus the original 550 V, and continuous drain currents ranging from 63A to 90A compared to the original's 77A, as summarized in the comparison table.

Q4: Are substitute parts compliant with REACH or subject to moisture sensitivity limitations?
A4: All substitute models are REACH Unaffected and rated MSL 1 (Unlimited).

Q5: Is it necessary to match the part exactly by series or manufacturer for electrical compatibility?
A5: Matching is determined by the listed electrical and mechanical parameters. Series and manufacturer are not the determining criteria if these parameters are equivalent.

Q6: Can these substitute MOSFETs be used for chassis mount applications?
A6: All substitute parts support chassis mount as required for APT55M50JFLL equivalence.

Q7: What regulatory and compliance certifications are maintained by the substitutes?
A7: All parts are EAR99 and REACH Unaffected, with HTSUS code 8541.29.0095, suitable for comparable regulatory requirements.

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