APT50M65B2LLG Equivalent & Substitute Parts

Part Overview

The APT50M65B2LLG is an N-Channel 500V 67A power MOSFET manufactured by Microsemi Corporation in the POWER MOS 7® series. This device is housed in a TO-247-3 variant T-MAX™ [B2] package and is rated for 694W maximum power dissipation at case temperature. The part is Active in product status and fully RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal, voltage, and current requirements. The APT50M65B2LLG has established substitute relationships with multiple IXYS HiPerFET™ series devices that share the same drain-source voltage rating and similar current handling capabilities.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	67	A
On-State Resistance (Rds On Max) @ Id, Vgs	65 mOhm @ 33.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 2.5mA
Gate Charge (Qg Max) @ Vgs	141	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ Vds	7010	pF @ 25V
Power Dissipation (Max)	694	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3 Variant	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the APT50M65B2LLG is determined by the following critical parameters:

Voltage Rating Requirement: All substitute parts must maintain the 500V drain-source voltage (Vdss) rating to ensure safe operation in the application circuit.

Current Handling Capability: Substitute parts must support continuous drain current (Id) at or above 67A at 25°C case temperature. Parts with higher current ratings (80A, 98A, 100A) are acceptable as they provide additional thermal margin and current capacity.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed the application's thermal budget. Substitute parts with equal or lower Rds On values maintain or improve efficiency characteristics.

Gate Drive Voltage: All substitutes operate at 10V drive voltage, matching the APT50M65B2LLG specification.

Temperature Range: All substitute parts maintain the -55°C to 150°C operating temperature range.

Package Compatibility: The APT50M65B2LLG uses a TO-247-3 variant package. Direct substitutes in TO-247-3 variant packages (IXFX80N50P, IXFX80N50Q3, IXFX98N50P3) are pin-compatible. Parts in TO-264-3 or TO-264AA packages (IXFK80N50P, IXFK80N50Q3, IXFB100N50Q3) require PCB layout modification but are electrically equivalent.

Compliance Status: All substitute parts are RoHS3 compliant, REACH unaffected, and carry EAR99 ECCN classification, matching the regulatory profile of the main part.

Parameter Comparison

Parameter	APT50M65B2LLG	IXFX80N50P	IXFX80N50Q3	IXFK80N50P	IXFK80N50Q3	IXFX98N50P3	IXFB100N50Q3
Manufacturer	Microsemi	IXYS	IXYS	IXYS	IXYS	IXYS	IXYS
Vdss (V)	500	500	500	500	500	500	500
Id @ 25°C (A)	67	80	80	80	80	98	100
Rds On Max (mOhm)	65 @ 33.5A, 10V	65 @ 40A, 10V	65 @ 40A, 10V	65 @ 40A, 10V	65 @ 40A, 10V	50 @ 500mA, 10V	49 @ 50A, 10V
Vgs(th) Max (V)	5 @ 2.5mA	5 @ 8mA	6.5 @ 8mA	5 @ 8mA	6.5 @ 8mA	5 @ 8mA	6.5 @ 8mA
Qg Max (nC)	141 @ 10V	197 @ 10V	200 @ 10V	197 @ 10V	200 @ 10V	197 @ 10V	255 @ 10V
Vgs Max (V)	±30	±30	±30	±30	±30	±30	±30
Ciss Max (pF)	7010 @ 25V	12700 @ 25V	10000 @ 25V	12700 @ 25V	10000 @ 25V	13100 @ 25V	13800 @ 25V
Power Dissipation Max (W)	694	1040	1250	1040	1250	1300	1560
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package Type	TO-247-3 Variant	PLUS247-3	PLUS247-3	TO-264AA	TO-264AA	PLUS247-3	PLUS264
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Direct Package Compatibility (Recommended for Drop-In Replacement):

The IXFX80N50P, IXFX80N50Q3, and IXFX98N50P3 are housed in PLUS247™-3 packages, which are TO-247-3 variants. These parts are pin-compatible with the APT50M65B2LLG and require no PCB layout modifications. All three maintain the 500V voltage rating and exceed the 67A current requirement. The IXFX80N50P and IXFX80N50Q3 provide 80A continuous current with identical 65 mOhm on-state resistance. The IXFX98N50P3 provides 98A continuous current with improved 50 mOhm on-state resistance, offering superior thermal performance.

Alternative Package Options (Layout Modification Required):

The IXFK80N50P and IXFK80N50Q3 are housed in TO-264AA packages. These parts are electrically equivalent to the 80A IXFX variants but require PCB footprint redesign. The IXFB100N50Q3 in PLUS264™ package provides the highest current rating (100A) and power dissipation (1560W), suitable for applications requiring maximum thermal headroom.

Compliance and Product Status:

All substitute parts are Active in product status, RoHS3 compliant, and REACH unaffected. All carry EAR99 ECCN classification, matching the regulatory compliance profile of the APT50M65B2LLG. Moisture sensitivity level is 1 (Unlimited) for all parts.

Inventory Availability:

Current stock levels are: IXFX80N50P (1447 pcs), IXFX80N50Q3 (2200 pcs), IXFK80N50P (3776 pcs), IXFK80N50Q3 (888 pcs), IXFX98N50P3 (1446 pcs), and IXFB100N50Q3 (1015 pcs).

Frequently Asked Questions (FAQ)

Q: Can IXFX80N50P or IXFX80N50Q3 be used as direct replacements for APT50M65B2LLG?

A: Yes. Both parts are housed in PLUS247™-3 packages (TO-247-3 variants) and are pin-compatible with the APT50M65B2LLG. Both maintain 500V Vdss rating and provide 80A continuous current, exceeding the 67A requirement. No PCB modifications are required.

Q: What is the difference between IXFX80N50P and IXFX80N50Q3?

A: Both parts share the same 80A current rating, 500V voltage rating, and 65 mOhm on-state resistance. The Q3 variant (IXFX80N50Q3) has a higher gate threshold voltage (6.5V vs 5V) and improved power dissipation (1250W vs 1040W). The Q3 class designation indicates enhanced thermal performance characteristics.

Q: Why do IXFK80N50P and IXFK80N50Q3 use different packages?

A: The IXFK series uses TO-264AA packages instead of TO-247-3 variants. While electrically equivalent to the IXFX80 series, the TO-264AA package requires different PCB footprints and mounting hardware. Package selection depends on application space constraints and thermal management requirements.

Q: Is IXFX98N50P3 suitable for the APT50M65B2LLG application?

A: Yes. The IXFX98N50P3 provides 98A continuous current and improved 50 mOhm on-state resistance compared to the 65 mOhm of the APT50M65B2LLG. It is housed in a PLUS247™-3 package (pin-compatible) and offers superior thermal performance with 1300W maximum power dissipation.

Q: Can IXFB100N50Q3 replace APT50M65B2LLG?

A: Electrically, yes. The IXFB100N50Q3 provides 100A continuous current and 1560W power dissipation, exceeding all electrical requirements. However, it uses a PLUS264™ package (TO-264-3 variant), which differs from the TO-247-3 variant of the APT50M65B2LLG. PCB layout modification is required.

Q: What are the key parameters that determine substitution compatibility?

A: The critical parameters are: (1) Drain-source voltage (Vdss) must equal 500V, (2) Continuous drain current (Id) must be at or above 67A, (3) Gate drive voltage must be 10V, (4) Operating temperature range must be -55°C to 150°C, and (5) Package type determines whether PCB modifications are needed. All substitute parts meet these criteria.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (IXFX80N50P, IXFX80N50Q3, IXFK80N50P, IXFK80N50Q3, IXFX98N50P3, IXFB100N50Q3) are RoHS3 compliant, REACH unaffected, and carry EAR99 ECCN classification, matching the regulatory profile of the APT50M65B2LLG.

Q: Why does IXFX98N50P3 have lower Rds On than IXFX80N50P despite similar current ratings?

A: The IXFX98N50P3 has a lower Rds On specification (50 mOhm) measured at different test conditions (500mA) compared to the IXFX80N50P (65 mOhm at 40A). This reflects improved silicon technology in the Polar3™ series, resulting in lower conduction losses and better thermal efficiency.

Q: What is the impact of higher gate charge (Qg) on circuit performance?

A: Higher gate charge increases the energy required to switch the MOSFET on and off, which may increase switching losses in high-frequency applications. The APT50M65B2LLG has 141 nC gate charge, while substitute parts range from 197 to 255 nC. For applications sensitive to switching frequency, lower gate charge values are preferable.

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