Equivalent & Substitute Parts for APT5014BLLG

Part Overview

The APT5014BLLG (Microchip Technology) is an N-channel power MOSFET in the Transistors, FETs, MOSFETs category. It is designed for high-voltage and high-current applications, offering a drain-to-source voltage of 500V and a continuous drain current of 35A in a TO-247 package. The product is currently active with inventory available. Engineering applications may require identification of alternative models to address supply chain, footprint, or compliance requirements.

Key Parameters

Parameter	Value
Manufacturer Part Number	APT5014BLLG
Manufacturer	Microchip Technology
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	140mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3261 pF @ 25 V
Power Dissipation (Max)	403W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
Inventory	2200 Pcs New Original In Stock
Product Status	Active

Substitute Part Grouping Explanation

Substitute parts are grouped strictly according to the following specified electrical and mechanical parameters for this product category:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Operating Temperature
Mounting Type
Package / Case
RoHS and REACH Compliance

Parameter Comparison

Parameter	APT5014BLLG Microchip	IXFH40N50Q IXYS	IXFH50N50P3 IXYS	IXFH52N50P2 IXYS	IXFR44N50Q3 IXYS	IXTX60N50L2 IXYS
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	500 V	500 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)	40A (Tc)	50A (Tc)	52A (Tc)	25A (Tc)	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	140mOhm @ 17.5A, 10V	140mOhm @ 500mA, 10V	120mOhm @ 25A, 10V	120mOhm @ 26A, 10V	154mOhm @ 22A, 10V	100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA	4.5V @ 4mA	5V @ 4mA	4.5V @ 4mA	6.5V @ 4mA	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V	130 nC @ 10 V	85 nC @ 10 V	113 nC @ 10 V	93 nC @ 10 V	610 nC @ 10 V
Vgs (Max)	±30V	±30V	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	3261 pF @ 25 V	3800 pF @ 25 V	4335 pF @ 25 V	6800 pF @ 25 V	4800 pF @ 25 V	24000 pF @ 25 V
Power Dissipation (Max)	403W (Tc)	500W (Tc)	960W (Tc)	960W (Tc)	300W (Tc)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3 Variant
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute MOSFETs are active products and are compliant with ROHS3 and REACH regulations. Each substitute matches the category, FET type, main electrical ratings, mounting type, package class, and compliance statuses provided.

Frequently Asked Questions (FAQ)

Q1: Which parameters are critical for substituting APT5014BLLG with another MOSFET?
A1: The critical parameters include FET type (N-Channel), technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, Vgs(th), gate charge (Qg), Vgs (Max), input capacitance (Ciss), power dissipation, operating temperature, mounting type, and package.

Q2: Are all substitute parts RoHS and REACH compliant?
A2: All substitute parts listed are ROHS3 Compliant and REACH Unaffected.

Q3: Is the footprint and mounting method identical for all substitutes?
A3: All substitutes use a through-hole mounting method. All except IXTX60N50L2 use a TO-247-3 package; IXTX60N50L2 uses a TO-247-3 Variant, which should be evaluated against board layout requirements.

Q4: Are there differences in electrical parameters among the substitutes?
A4: Differences exist in maximum current, Rds On, gate charge, and input capacitance. All are within the specified design category and permitted substitution parameters.

Q5: Can any listed part be selected without further checking?
A5: All substitutes strictly meet the specified electrical, mechanical, and compliance criteria as provided. Selection should be based on alignment of application requirements to the compared parameters.

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