AOT412 N-Channel MOSFET 100V 8.2A/60A TO-220 Equivalent & Substitute Parts

Part Overview

The AOT412 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 8.2A at Ta (ambient temperature) and 60A at Tc (case temperature). The device is housed in a TO-220-3 through-hole package and operates across a temperature range of -55°C to 175°C. The AOT412 carries a product status of "Not For New Designs," indicating that while functional units remain in inventory, the manufacturer no longer recommends this part for new circuit development. Identifying equivalent and substitute parts is necessary to support legacy system maintenance, repair operations, and to enable migration to active product lines with comparable electrical and mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	8.2	A
Continuous Drain Current @ 25°C (Tc)	60	A
On-State Resistance (Rds On) @ 20A, 10V	15.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.8	V
Gate Charge (Qg) @ 10V	54	nC
Input Capacitance (Ciss) @ 50V	3220	pF
Power Dissipation (Tc)	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the AOT412 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package Type: Must be TO-220-3 through-hole configuration
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Parameters:

Continuous Drain Current (Tc): Substitute parts must support the application's current requirements; higher ratings provide design margin
On-State Resistance (Rds On): Lower values indicate improved efficiency; values within ±20% of the AOT412 specification maintain thermal performance characteristics
Gate Threshold Voltage (Vgs(th)): Must fall within ±1.0V of the AOT412 value to ensure compatible gate drive circuits
Gate Charge (Qg): Lower values reduce switching losses; values within ±50% maintain switching performance
Input Capacitance (Ciss): Values within ±50% maintain gate drive compatibility
Power Dissipation (Tc): Higher ratings provide thermal margin for the same application

All substitute parts listed meet the primary criteria. Secondary parameters are evaluated to determine suitability for specific application contexts.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ 10V (nC)	Ciss @ 50V (pF)	Power Dissipation Tc (W)	Product Status
AOT412	Alpha & Omega Semiconductor Inc.	100	60	15.8	3.8	54	3220	150	Not For New Designs
CSD19534KCS	Texas Instruments	100	100	16.5	3.4	22.2	1670	118	Active
FDP150N10	onsemi	100	57	15	4.5	69	4760	110	Active
FDP150N10A-F102	onsemi	100	50	15	4	21	1440	91	Active
HUF75645P3	onsemi	100	75	14	4	238	3790	310	Active
IPP16CN10NGXKSA1	Infineon Technologies	100	53	16.5	4	48	3220	100	Obsolete
IXTP60N10T	IXYS	100	60	18	4.5	49	2650	176	Active
IXTP80N10T	IXYS	100	80	14	5	60	3040	230	Active
PSMN013-100PS,127	Nexperia USA Inc.	100	68	13.9	4	59	3195	170	Obsolete
PSMN015-100P,127	Nexperia USA Inc.	100	75	15	4	90	4900	300	Obsolete
STP80NF10	STMicroelectronics	100	80	15	4	182	5500	300	Active

Engineering Selection Recommendations

Active Product Alternatives (Recommended for New Designs and Ongoing Support):

The following substitute parts carry Active product status and are recommended for new circuit development and long-term system support:

CSD19534KCS (Texas Instruments): Offers the highest continuous drain current rating at 100A with reduced gate charge (22.2 nC), resulting in lower switching losses. Input capacitance is significantly lower (1670 pF), enabling faster gate switching. Power dissipation rating of 118W is lower than the AOT412, requiring thermal management consideration in high-current applications. RoHS3 compliant and REACH unaffected.

FDP150N10 (onsemi PowerTrench®): Rated for 57A continuous drain current with on-state resistance of 15 mOhm, closely matching the AOT412 electrical profile. Power dissipation of 110W provides adequate thermal margin. Operating temperature range extends to 150°C (5°C lower than AOT412). RoHS3 compliant and REACH unaffected.

FDP150N10A-F102 (onsemi PowerTrench®): Rated for 50A continuous drain current with 15 mOhm on-state resistance. Gate charge of 21 nC is significantly lower than the AOT412, reducing switching losses. Input capacitance of 1440 pF is the lowest among active alternatives. Power dissipation of 91W requires thermal design consideration. Operating temperature range matches AOT412 (-55°C to 175°C). RoHS3 compliant and REACH unaffected.

HUF75645P3 (onsemi UltraFET™): Rated for 75A continuous drain current with the lowest on-state resistance at 14 mOhm. Power dissipation of 310W provides substantial thermal margin. Gate charge of 238 nC is elevated, increasing switching losses. Input capacitance of 3790 pF is comparable to the AOT412. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected.

IXTP60N10T (IXYS Trench): Rated for 60A continuous drain current, matching the AOT412 case temperature specification. On-state resistance of 18 mOhm is slightly elevated. Power dissipation of 176W provides thermal margin. Gate charge of 49 nC is comparable to the AOT412. Maximum gate voltage rating of ±30V exceeds the AOT412 specification. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected.

IXTP80N10T (IXYS Trench): Rated for 80A continuous drain current with 14 mOhm on-state resistance. Power dissipation of 230W provides thermal margin. Gate charge of 60 nC is slightly elevated. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected.

STP80NF10 (STMicroelectronics STripFET™ II): Rated for 80A continuous drain current with 15 mOhm on-state resistance. Power dissipation of 300W provides substantial thermal margin. Gate charge of 182 nC is elevated, increasing switching losses. Input capacitance of 5500 pF is the highest among alternatives. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected.

Obsolete Product Alternatives (Legacy System Support Only):

The following substitute parts carry Obsolete product status and are suitable only for repair and maintenance of existing systems:

IPP16CN10NGXKSA1 (Infineon OptiMOS™): Rated for 53A continuous drain current with 16.5 mOhm on-state resistance. Input capacitance of 3220 pF matches the AOT412 exactly. Power dissipation of 100W is lower than the AOT412. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected. Moisture sensitivity level 1 (Unlimited).

PSMN013-100PS,127 (Nexperia TrenchMOS™): Rated for 68A continuous drain current with 13.9 mOhm on-state resistance. Power dissipation of 170W provides thermal margin. Gate charge of 59 nC is comparable to the AOT412. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected. Moisture sensitivity level 1 (Unlimited).

PSMN015-100P,127 (Nexperia TrenchMOS™): Rated for 75A continuous drain current with 15 mOhm on-state resistance. Power dissipation of 300W provides substantial thermal margin. Gate charge of 90 nC is elevated. Input capacitance of 4900 pF is elevated. Operating temperature range matches AOT412. RoHS3 compliant and REACH unaffected. Moisture sensitivity level 1 (Unlimited).

Frequently Asked Questions (FAQ)

Q: Can the AOT412 be directly replaced with any of the listed substitute parts?

A: Direct replacement is possible only when the substitute part meets all primary substitution criteria: 100V Vdss rating, N-Channel configuration, MOSFET technology, TO-220-3 package, and -55°C to 175°C operating temperature range. All listed parts meet these criteria. However, secondary parameters such as continuous drain current, on-state resistance, and gate charge may differ, requiring circuit validation to confirm suitability for the specific application.

Q: What is the difference between the AOT412 and the CSD19534KCS?

A: Both devices are rated for 100V Vdss and feature TO-220-3 packaging. The CSD19534KCS offers higher continuous drain current (100A versus 60A), lower gate charge (22.2 nC versus 54 nC), and significantly lower input capacitance (1670 pF versus 3220 pF). These characteristics result in reduced switching losses and faster gate response. The CSD19534KCS carries Active product status, whereas the AOT412 is Not For New Designs. Power dissipation rating is lower for the CSD19534KCS (118W versus 150W), requiring thermal design consideration.

Q: Why do some substitute parts have higher gate charge values than the AOT412?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Higher gate charge values increase switching losses and require higher gate drive current. Parts such as HUF75645P3 (238 nC) and STP80NF10 (182 nC) have elevated gate charge due to larger die sizes and higher current ratings. These parts are suitable for applications where switching frequency is low or where gate drive capability is not constrained.

Q: Can I use a substitute part with lower continuous drain current than the AOT412?

A: Substitution with lower continuous drain current is not recommended. The AOT412 is rated for 60A at case temperature (Tc). Using a part rated for lower current, such as FDP150N10A-F102 (50A), reduces thermal margin and may cause device failure under full-load conditions. Substitute parts should maintain equal or higher current ratings relative to the application's maximum current requirement.

Q: What is the significance of the "Product Status" field?

A: Product Status indicates the manufacturer's support level. Active status means the manufacturer continues to produce the part, provides technical support, and maintains long-term availability. Not For New Designs indicates the manufacturer no longer recommends the part for new circuit development but may continue limited production for legacy support. Obsolete status indicates the manufacturer has discontinued production and no longer provides technical support. For new designs, Active status parts are strongly preferred.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts carry RoHS3 compliance certification. The AOT412 also carries RoHS3 compliance. RoHS3 compliance ensures the parts do not contain restricted hazardous substances as defined by the Restriction of Hazardous Substances Directive.

Q: What does "REACH Unaffected" mean?

A: REACH Unaffected indicates that the part does not contain substances of very high concern (SVHC) as listed in the REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) regulation. All listed parts, including the AOT412, carry REACH Unaffected status.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on application-specific requirements. For applications requiring high current handling with low switching losses, the CSD19534KCS or HUF75645P3 are suitable. For applications with tight thermal constraints, parts with lower power dissipation such as FDP150N10A-F102 may be preferred. For applications with high switching frequency, parts with lower gate charge such as FDP150N10A-F102 or CSD19534KCS reduce switching losses. Consult the detailed datasheet for each candidate part to verify compatibility with gate drive voltage, thermal management, and switching frequency requirements.

Q: Is the TO-220-3 package the same across all substitute parts?

A: Yes, all substitute parts use the TO-220-3 through-hole package, ensuring mechanical compatibility with the AOT412. The TO-220-3 package features three leads: Gate (G), Drain (D), and Source (S), with identical pin assignments across all listed parts. PCB layout and heatsink mounting are directly compatible.

Q: Can I use substitute parts with higher operating temperature ratings?

A: The AOT412 operates from -55°C to 175°C. All listed substitute parts support this temperature range or higher. Using a part with a higher maximum operating temperature (such as 175°C or above) provides additional thermal margin and is acceptable. However, the application's actual operating temperature must not exceed the device's rated maximum junction temperature (Tj).

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta (ambient temperature) current rating assumes the device operates in free air without a heatsink, with thermal dissipation limited by the package's thermal resistance to ambient air. Tc (case temperature) current rating assumes the device is mounted on a heatsink, with thermal dissipation enhanced by the heatsink's thermal conductivity. The AOT412 is rated for 8.2A at Ta and 60A at Tc. Substitute parts are selected based on the application's thermal management approach. For applications using heatsinks, Tc ratings are the relevant specification.

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