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AON3613 MOSFET N/P-Channel 30V 4.5A Equivalent & Substitute Parts
Part Overview
The AON3613 is a dual MOSFET array integrating N-channel and P-channel transistors in a common drain configuration, designed for logic-level gate switching applications. This component operates at 30V drain-source voltage with 4.5A continuous drain current and is housed in a compact 8-DFN (3x3) surface mount package.
The AON3613 carries an obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 4.5 | A |
| On-State Resistance (Rds On) @ Id, Vgs | 52 mOhm @ 4.5A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 1.5 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 10 | nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 245 | pF @ 15V |
| Maximum Power Dissipation | 2.1 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | 8-DFN (3x3) | Surface Mount |
| Configuration | N and P-Channel, Common Drain | — |
| FET Feature | Logic Level Gate | — |
Substitute Part Grouping Explanation
Substitution of the AON3613 is determined by electrical and mechanical compatibility across the following critical parameters:
Voltage Rating Compatibility: The substitute part must maintain the same 30V drain-source voltage (Vdss) rating to ensure safe operation within the original circuit design envelope.
Package and Pinout Compatibility: The substitute must use the identical 8-DFN (3x3) surface mount package with matching pin configuration and common drain topology (N and P-channel configuration).
Current Handling Capability: The substitute must support continuous drain current (Id) at or above the original 4.5A specification to ensure adequate current delivery without thermal stress.
Logic Level Gate Operation: The substitute must retain logic-level gate drive characteristics to maintain compatibility with existing gate drive circuitry.
Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C (TJ).
On-State Resistance (Rds On): The substitute must maintain comparable or lower on-state resistance to preserve power efficiency and thermal performance.
The AON3611 meets all substitution criteria as a direct equivalent within the same product family, offering enhanced current ratings and active product status.
Parameter Comparison
| Parameter | AON3613 (Main Part) | AON3611 (Substitute) | Compatibility |
|---|---|---|---|
| Drain to Source Voltage (Vdss) | 30V | 30V | Identical |
| Continuous Drain Current (Id) @ 25°C | 4.5A | 5A, 6A | Substitute exceeds requirement |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 4.5A, 10V | 50 mOhm @ 5A, 10V | Substitute lower resistance |
| Gate Threshold Voltage (Vgs(th)) @ Id | 1.5V @ 250µA | 2.5V @ 250µA | Substitute higher threshold |
| Gate Charge (Qg) @ Vgs | 10 nC @ 10V | 10 nC @ 10V | Identical |
| Input Capacitance (Ciss) @ Vds | 245 pF @ 15V | 170 pF @ 15V | Substitute lower capacitance |
| Maximum Power Dissipation | 2.1W | 2.1W, 2.5W | Substitute equal or higher |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Identical |
| Package / Case | 8-DFN (3x3) | 8-DFN (3x3) | Identical |
| Configuration | N and P-Channel, Common Drain | N and P-Channel, Common Drain | Identical |
| FET Feature | Logic Level Gate | Logic Level Gate | Identical |
| Product Status | Obsolete | Active | Substitute actively manufactured |
Engineering Selection Recommendations
Primary Substitute: AON3611
The AON3611 is the recommended substitute for the obsolete AON3613. Both components share the same base product number (AON361) and are manufactured by Alpha & Omega Semiconductor Inc., confirming product family alignment.
Compliance and Certification Status:
The AON3611 carries active product status with RoHS3 compliance certification, ensuring long-term availability and regulatory alignment. Both the main part and substitute maintain REACH Unaffected status and EAR99 export classification.
Electrical Performance:
The AON3611 provides enhanced electrical performance relative to the AON3613. The substitute supports higher continuous drain current ratings (5A and 6A versus 4.5A), lower on-state resistance (50 mOhm versus 52 mOhm), and reduced input capacitance (170 pF versus 245 pF). These characteristics result in improved thermal efficiency and faster switching response.
Gate Threshold Voltage Consideration:
The AON3611 exhibits a higher gate threshold voltage (2.5V versus 1.5V). This parameter difference requires verification that existing gate drive circuits deliver sufficient voltage margin above the 2.5V threshold to ensure reliable switching operation.
Package and Mechanical Compatibility:
Both components utilize identical 8-DFN (3x3) surface mount packaging with matching pinout and common drain configuration, enabling direct board-level substitution without layout modification.
Supply Chain Status:
The AON3611 maintains substantial inventory availability (23,093 pieces in stock) compared to the obsolete AON3613 (17,220 pieces), supporting immediate procurement and production continuity.
Frequently Asked Questions (FAQ)
Q: Can the AON3611 directly replace the AON3613 on existing circuit boards?
A: Yes. Both components share identical 8-DFN (3x3) package geometry, pinout configuration, and common drain topology. Direct board-level substitution is mechanically and electrically feasible without PCB redesign.
Q: What is the significance of the higher gate threshold voltage (Vgs(th)) in the AON3611?
A: The AON3611 requires a minimum gate voltage of 2.5V (versus 1.5V for the AON3613) to initiate conduction at the specified test current (250µA). Gate drive circuits must deliver voltage above this threshold to ensure reliable switching. Existing gate drive designs operating above 2.5V will function without modification.
Q: Does the lower on-state resistance of the AON3611 provide any advantage?
A: Yes. The 50 mOhm on-state resistance (versus 52 mOhm) reduces power dissipation and heat generation during conduction. This improvement enhances thermal performance and may extend component operating life in thermally constrained applications.
Q: Why is the input capacitance lower in the AON3611?
A: The reduced input capacitance (170 pF versus 245 pF) decreases gate charge requirements and enables faster switching transitions. This characteristic improves switching speed and reduces gate drive power consumption.
Q: Is the AON3611 available in the same packaging format?
A: Yes. The AON3611 is supplied in 8-DFN (3x3) surface mount packaging, identical to the AON3613. The substitute is available in Tape & Reel (TR) packaging format for automated assembly.
Q: What is the product status difference between these components?
A: The AON3613 is classified as obsolete, indicating discontinued manufacturing and limited future availability. The AON3611 maintains active product status with ongoing production and long-term supply assurance.
Q: Are there any compliance or regulatory differences between the two parts?
A: The AON3611 carries RoHS3 compliance certification, ensuring compliance with current environmental regulations. Both components maintain REACH Unaffected status and identical export classification (EAR99), supporting global distribution without regulatory restriction.
Q: Can the AON3611 handle the same power dissipation as the AON3613?
A: Yes. The AON3611 supports maximum power dissipation of 2.1W and 2.5W, meeting or exceeding the 2.1W specification of the AON3613. The substitute is suitable for applications with equivalent or higher thermal requirements.
Q: What is the operating temperature range for the AON3611?
A: The AON3611 operates across the full temperature range of -55°C to 150°C (TJ), identical to the AON3613, supporting applications requiring extended temperature performance.
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