AOD514 N-Channel MOSFET 30V 17A/46A TO-252 Equivalent & Substitute Parts

Part Overview

The AOD514 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 17A at Ta and 46A at Tc in a Surface Mount TO-252 (DPAK) package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for ongoing production support, maintenance applications, and design continuity where the AOD514 is currently deployed.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	17	A
Continuous Drain Current @ 25°C (Tc)	46	A
RDS(on) Max @ 20A, 10V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.6	V
Gate Charge (Qg) @ 10V	22.5	nC
Input Capacitance (Ciss) @ 15V	951	pF
Power Dissipation Max (Ta)	2.5	W
Power Dissipation Max (Tc)	50	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252 (DPAK)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the AOD514 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package Type: Must be TO-252 (DPAK) Surface Mount
Operating Temperature Range: Must support -55°C to 175°C minimum
Continuous Drain Current: Must support minimum 17A at Ta or equivalent thermal performance

Secondary Compatibility Parameters:

RDS(on) characteristics must be compatible with circuit switching requirements
Gate charge and input capacitance must not introduce unacceptable switching delays
Power dissipation capability must meet or exceed application thermal demands

All substitute parts listed below meet the primary substitution criteria. Differences in secondary parameters reflect manufacturing process variations and performance enhancements available in active product lines.

Parameter Comparison

Parameter	AOD514	FDD8896	IPD060N03LGATMA1	IPD50N03S207ATMA1	IPD50N03S4L06ATMA1	PJD80N03_L2_00001
Manufacturer	Alpha & Omega Semiconductor	Fairchild Semiconductor	Infineon Technologies	Infineon Technologies	Infineon Technologies	Panjit International Inc.
Vdss (V)	30	30	30	30	30	30
Id @ Ta (A)	17	17	—	—	—	15
Id @ Tc (A)	46	94	50	50	50	80
RDS(on) Max @ 10V (mOhm)	6.5 @ 20A	5.7 @ 35A	6 @ 30A	7.3 @ 50A	5.5 @ 50A	6 @ 20A
Vgs(th) @ 250µA (V)	2.6	2.5	2.2	4	2.2	2.5
Gate Charge @ 10V (nC)	22.5	60	23	68	31	12
Ciss @ 15V or 25V (pF)	951 @ 15V	2525 @ 15V	2400 @ 15V	2000 @ 25V	2330 @ 25V	1323 @ 25V
Power Dissipation Max Tc (W)	50	80	56	136	56	55
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)
Product Status	Not For New Designs	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	—	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

FDD8896 (Fairchild Semiconductor) The FDD8896 is an active product with identical Vdss and Ta current ratings to the AOD514. It provides enhanced Tc current capability (94A vs. 46A) and superior power dissipation (80W vs. 50W). This part is suitable for direct substitution in applications where the AOD514 is currently deployed, with the advantage of improved thermal performance and extended product lifecycle support.

IPD060N03LGATMA1 (Infineon Technologies, OptiMOS™ Series) This part meets all primary substitution criteria with 30V Vdss and 50A Tc current. It features comparable gate charge (23 nC) and lower RDS(on) (6 mOhm @ 30A). The OptiMOS™ technology platform provides active manufacturing status and long-term availability. Suitable for applications requiring moderate current handling with efficient switching characteristics.

IPD50N03S207ATMA1 (Infineon Technologies, OptiMOS™ Series) This variant offers the highest power dissipation capability (136W Tc) among all substitutes, making it suitable for high-thermal-demand applications. It maintains 30V Vdss and 50A Tc current. The elevated gate threshold voltage (4V @ 85µA) and higher gate charge (68 nC) may require circuit evaluation in timing-sensitive applications.

IPD50N03S4L06ATMA1 (Infineon Technologies, OptiMOS™ Series, AEC-Q101 Qualified) This automotive-grade part carries AEC-Q101 qualification and is suitable for applications requiring automotive compliance. It provides 30V Vdss, 50A Tc current, and the lowest RDS(on) among substitutes (5.5 mOhm @ 50A). Operating temperature range extends to 175°C. Vgs(max) is limited to ±16V compared to ±20V on other parts.

PJD80N03_L2_00001 (Panjit International Inc.) This part meets primary substitution criteria with 30V Vdss and 15A Ta current. It offers the lowest gate charge (12 nC @ 4.5V) and moderate input capacitance (1323 pF), advantageous for high-frequency switching applications. Operating temperature range is limited to -55°C to 150°C. Inventory availability is significantly lower than other substitutes.

Frequently Asked Questions (FAQ)

Q: Can the AOD514 be directly replaced with any of these substitute parts?

A: All listed substitute parts meet the primary electrical and mechanical substitution criteria: 30V Vdss, N-Channel MOSFET technology, TO-252 (DPAK) package, and compatible operating temperature ranges. Direct substitution is feasible from a package and voltage standpoint. Circuit-level evaluation is required only if the application is sensitive to differences in RDS(on), gate charge, or input capacitance characteristics.

Q: What is the significance of the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at ambient temperature (typically 25°C with natural convection), while Tc represents continuous drain current at case temperature (typically 25°C with forced cooling or thermal interface material). Applications with passive cooling should reference Ta ratings; applications with active thermal management may utilize Tc ratings. The AOD514 specifies 17A (Ta) and 46A (Tc), while substitutes generally offer higher Tc ratings, indicating improved thermal performance.

Q: Why do some substitute parts have higher gate charge values?

A: Gate charge (Qg) reflects the total charge required to switch the FET from off to on state. Higher gate charge values (such as 60 nC in FDD8896 or 68 nC in IPD50N03S207ATMA1) may increase switching losses in high-frequency applications but do not prevent substitution. Circuit evaluation is necessary only if the gate driver has current or timing constraints.

Q: Is the automotive-grade IPD50N03S4L06ATMA1 suitable for non-automotive applications?

A: Yes. AEC-Q101 qualification indicates enhanced reliability testing and stricter manufacturing controls. This part is suitable for any application requiring the specified electrical characteristics, regardless of automotive use. The AEC-Q101 qualification provides additional assurance of product quality and consistency.

Q: What is the impact of the lower maximum operating temperature (150°C) in the PJD80N03_L2_00001?

A: The PJD80N03_L2_00001 supports junction temperatures up to 150°C, compared to 175°C for other substitutes. This difference is relevant only if the application requires sustained operation at junction temperatures between 150°C and 175°C. For most standard applications operating below 150°C, this limitation is not a constraint.

Q: How do RDS(on) differences affect circuit performance?

A: RDS(on) determines conduction losses and heat generation during the on-state. Lower RDS(on) values reduce power dissipation and heat generation. The AOD514 specifies 6.5 mOhm @ 20A, 10V. Substitutes range from 5.5 mOhm to 7.3 mOhm at comparable conditions. Differences of ±1 mOhm typically result in less than 10% variation in conduction losses and are acceptable in most applications. High-current or thermally constrained designs should verify thermal performance with the selected substitute.

Q: Are all substitute parts RoHS3 compliant?

A: The AOD514, IPD060N03LGATMA1, IPD50N03S207ATMA1, and IPD50N03S4L06ATMA1 are explicitly listed as RoHS3 compliant. The PJD80N03_L2_00001 is also RoHS3 compliant. RoHS3 compliance status for FDD8896 is not specified in the provided data. Verification with the manufacturer is recommended if RoHS3 compliance is a requirement.

Q: What is the difference between the three Infineon OptiMOS™ variants?

A: IPD060N03LGATMA1 provides balanced performance with 56W power dissipation. IPD50N03S207ATMA1 offers maximum power dissipation (136W) at the cost of higher gate charge and threshold voltage. IPD50N03S4L06ATMA1 is automotive-qualified with the lowest RDS(on) (5.5 mOhm) and restricted Vgs(max) (±16V). Selection depends on thermal requirements, automotive compliance needs, and gate driver voltage constraints.

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