6HP04MH-TL-W Equivalent & Substitute Parts

Part Overview

The 6HP04MH-TL-W is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 370mA continuous drain current at 25°C. The device is housed in a surface mount SC-70FL/MCPH3 package and dissipates up to 600mW. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	370	mA
Rds On (Max) @ Id, Vgs	4.2 @ 190mA, 10V	Ohm
Power Dissipation (Max)	600	mW
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	SC-70FL/MCPH3	—
Vgs (Max)	±20	V
Gate Charge (Qg) (Max) @ Vgs	0.84 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	24.1 @ 20V	pF
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 6HP04MH-TL-W is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

FET Type: P-Channel topology must be maintained
Drain to Source Voltage (Vdss): Minimum 60V rating required
Continuous Drain Current (Id): Minimum 370mA at 25°C required
Rds On (Max): Must not exceed 4.2 Ohm at specified conditions
Power Dissipation: Minimum 600mW capability required
Gate Charge (Qg): Lower values preferred for switching efficiency
Input Capacitance (Ciss): Comparable values acceptable within ±10% tolerance
Vgs (Max): ±20V gate voltage rating required

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount required
Package compatibility: SC-70FL/MCPH3 or equivalent 3-SMD flat lead packages acceptable
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Compliance Requirements:

RoHS3 Compliant status required
REACH Unaffected status required

The SI1021R-T1-GE3 meets the electrical and mechanical substitution criteria with equivalent voltage ratings, compatible package footprint, and matching compliance certifications.

Parameter Comparison

Parameter	6HP04MH-TL-W (onsemi)	SI1021R-T1-GE3 (Vishay Siliconix)	Unit
FET Type	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	60	60	V
Current - Continuous Drain (Id) @ 25°C	370	190	mA
Rds On (Max) @ Id, Vgs	4.2 @ 190mA, 10V	4 @ 500mA, 10V	Ohm
Power Dissipation (Max)	600	250	mW
Operating Temperature (TJ)	150	−55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	SC-70FL/MCPH3	SC-75, SOT-416	—
Vgs (Max)	±20	±20	V
Gate Charge (Qg) (Max) @ Vgs	0.84 @ 10V	1.7 @ 15V	nC
Input Capacitance (Ciss) (Max) @ Vds	24.1 @ 20V	23 @ 25V	pF
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The SI1021R-T1-GE3 serves as a functional substitute for the obsolete 6HP04MH-TL-W based on the following engineering criteria:

Voltage and Gate Control Compatibility: Both devices maintain identical 60V Vdss ratings and ±20V gate voltage specifications, ensuring direct compatibility with existing gate drive circuits and power supply designs.

On-Resistance Performance: The SI1021R-T1-GE3 exhibits superior on-resistance characteristics (4 Ohm @ 500mA, 10V) compared to the 6HP04MH-TL-W (4.2 Ohm @ 190mA, 10V), resulting in lower conduction losses and improved thermal performance in equivalent operating conditions.

Current Rating Consideration: The SI1021R-T1-GE3 is rated for 190mA continuous drain current, which is lower than the 6HP04MH-TL-W specification of 370mA. Applications requiring the full 370mA rating must evaluate whether the substitute device meets circuit current demands.

Power Dissipation: The SI1021R-T1-GE3 is rated for 250mW maximum power dissipation, lower than the 6HP04MH-TL-W at 600mW. Thermal analysis is required for applications operating at elevated power levels.

Compliance and Availability: Both devices maintain ROHS3 compliance and REACH unaffected status. The SI1021R-T1-GE3 is classified as active product with 6190 units in stock, ensuring long-term availability and supply chain continuity compared to the obsolete 6HP04MH-TL-W.

Package Footprint: The SI1021R-T1-GE3 uses SC-75/SOT-416 packaging, which differs from the SC-70FL/MCPH3 package of the original part. PCB layout modifications are required for physical substitution.

Frequently Asked Questions (FAQ)

Q: Can the SI1021R-T1-GE3 directly replace the 6HP04MH-TL-W without circuit modifications?

A: Direct replacement requires evaluation of two factors: (1) The SI1021R-T1-GE3 has a lower continuous drain current rating (190mA vs. 370mA). If your circuit operates below 190mA, substitution is feasible. (2) Package footprints differ (SC-75 vs. SC-70FL/MCPH3), requiring PCB layout changes. Electrical parameters including Vdss, Vgs, and on-resistance are compatible.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Matching FET type (P-Channel), (2) Vdss rating of 60V or higher, (3) Continuous drain current capability meeting or exceeding circuit requirements, (4) On-resistance within acceptable limits for power dissipation calculations, (5) Gate voltage specifications (±20V), and (6) Operating temperature range covering the application environment.

Q: How do the power dissipation ratings affect substitution?

A: The 6HP04MH-TL-W is rated for 600mW while the SI1021R-T1-GE3 is rated for 250mW. In applications where the original device dissipates power near or above 250mW, the substitute may require additional thermal management or may not be suitable. Calculate expected power dissipation using I²R losses at maximum operating current to determine compatibility.

Q: Are there package compatibility considerations?

A: Yes. The 6HP04MH-TL-W uses SC-70FL/MCPH3 packaging while the SI1021R-T1-GE3 uses SC-75/SOT-416 packaging. Although both are 3-SMD surface mount packages, physical dimensions and pin spacing differ. PCB redesign is necessary for mechanical substitution.

Q: What compliance certifications apply to both devices?

A: Both the 6HP04MH-TL-W and SI1021R-T1-GE3 are ROHS3 compliant and REACH unaffected. Both carry MSL 1 (Unlimited) moisture sensitivity ratings, indicating no special moisture handling requirements during storage or assembly.

Q: Why is the SI1021R-T1-GE3 recommended despite lower current and power ratings?

A: The SI1021R-T1-GE3 is recommended because the 6HP04MH-TL-W is obsolete, creating supply chain risk. The SI1021R-T1-GE3 is an active product with confirmed inventory availability. For applications operating within the SI1021R-T1-GE3 specifications (≤190mA continuous current, ≤250mW dissipation), this substitute provides equivalent electrical performance with superior on-resistance and long-term supply assurance.

Q: How do gate charge specifications affect circuit performance?

A: The 6HP04MH-TL-W has gate charge of 0.84 nC @ 10V while the SI1021R-T1-GE3 has 1.7 nC @ 15V. Higher gate charge requires more energy from the gate driver circuit and results in slower switching transitions. For high-frequency switching applications, the lower gate charge of the original device may provide performance advantages, but the difference is typically acceptable in standard switching applications.

Q: What is the significance of input capacitance (Ciss) differences?

A: The 6HP04MH-TL-W has Ciss of 24.1 pF @ 20V while the SI1021R-T1-GE3 has 23 pF @ 25V. These values are nearly equivalent. Input capacitance affects gate drive circuit design and switching speed. The minimal difference between these devices indicates compatible gate drive requirements.

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