Broadcom 5082-2800 Schottky Diode Equivalent & Substitute Parts

Part Overview

The Broadcom 5082-2800 is an RF Schottky diode rated for 70V peak reverse voltage with 250mW power dissipation in an axial DO-35 package. This component is classified as obsolete, making equivalent substitutes necessary for new designs and production continuity. The part's primary application involves RF signal detection and switching circuits requiring low forward voltage drop and fast switching characteristics inherent to Schottky technology.

Substiute Parts

5082-2800

Broadcom LimitedIn Stock: 32775082-2800 Datasheet

Current PartRFQ

1N5711

Microchip TechnologyIn Stock: 472811N5711 Datasheet

MFR RecommendedRFQ

1N5711

Microchip TechnologyIn Stock: 472811N5711 Datasheet

MFR RecommendedRFQ

1N5711-1

Microchip TechnologyIn Stock: 21111N5711-1 Datasheet

MFR RecommendedRFQ

1N6858-1

Microchip TechnologyIn Stock: 8711N6858-1 Datasheet

MFR RecommendedRFQ

BAS170WE6327HTSA1

Infineon TechnologiesIn Stock: 3304BAS170WE6327HTSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 5082-2800 is determined by the following critical parameters:

Voltage Rating: All substitutes must maintain a minimum peak reverse voltage (Vr) of 70V to ensure equivalent circuit protection and reliability.

Package Type: The original part uses DO-35 axial through-hole packaging. Substitutes are grouped into two categories: through-hole axial packages (DO-35/DO-204AH) maintaining form-factor compatibility, and surface-mount alternatives (SOD-323) for designs permitting package migration.

Diode Technology: All substitutes employ Schottky technology, preserving the low forward voltage drop and fast switching characteristics essential to RF applications.

Current Rating: The 5082-2800 specifies 15mA maximum current. Substitutes with equal or higher current ratings (33mA, 70mA, 75mA) provide functional equivalence with improved thermal margin.

Capacitance: The 2pF junction capacitance at 0V, 1MHz is maintained across primary substitutes, critical for RF signal integrity.

Parameter Comparison

Engineering Selection Recommendations

Through-Hole Axial Substitutes (Form-Factor Compatible):

The 1N5711 and 1N5711-1 (Microchip Technology) provide direct functional equivalence in DO-35 axial packaging. Both maintain 70V reverse voltage rating, 2pF capacitance, and 1V forward voltage at 15mA. The 1N5711-1 is a variant designation of the base 1N5711 product. These parts are active products with established supply chains and are suitable for direct replacement in existing through-hole PCB designs.

The 1N6858-1 (Microchip Technology) offers higher current capacity (75mA) while maintaining 70V voltage rating and DO-35 packaging. Forward voltage is reduced to 650mV at 15mA, providing improved efficiency in power-limited applications. Junction capacitance increases to 4.5pF, which may affect RF performance in sensitive circuits.

Surface-Mount Substitute (Package Migration):

The BAS170WE6327HTSA1 (Infineon Technologies) is a surface-mount SOD-323 package alternative rated for 70V and 70mA. This part achieves ROHS3 compliance, addressing environmental regulatory requirements. Reverse leakage current is reduced to 100nA at 50V. Implementation requires PCB redesign to accommodate surface-mount footprint and reflow soldering processes. This option is suitable for new designs prioritizing RoHS compliance and miniaturization.

Product Status Consideration:

All substitute parts maintain active product status, ensuring long-term availability and manufacturing support. The original 5082-2800 obsolescence necessitates migration to one of these active alternatives for production continuity.

Frequently Asked Questions (FAQ)

Q: Can the 1N5711 directly replace the 5082-2800 in existing designs?

A: Yes. The 1N5711 maintains identical voltage rating (70V), capacitance (2pF @ 0V, 1MHz), and forward voltage characteristics (1V @ 15mA). Both use DO-35 axial through-hole packaging. No circuit modifications are required for direct substitution.

Q: What is the difference between 1N5711 and 1N5711-1?

A: The 1N5711-1 is a variant designation of the base 1N5711 product. Both share identical electrical specifications and packaging. Selection between them depends on supplier availability and inventory status.

Q: Why does the 1N6858-1 have higher capacitance (4.5pF vs 2pF)?

A: The 1N6858-1 is optimized for higher current capacity (75mA) and lower forward voltage (650mV @ 15mA). The increased junction capacitance is a trade-off inherent to this design. In RF applications sensitive to capacitance variation, the 1N5711 series is preferred.

Q: Can the BAS170WE6327HTSA1 be used as a drop-in replacement?

A: No. The BAS170WE6327HTSA1 uses SOD-323 surface-mount packaging, requiring PCB redesign and reflow soldering. This option is suitable only for new designs or boards undergoing redesign. The advantage is ROHS3 compliance and reduced reverse leakage current (100nA).

Q: What are the temperature operating range differences?

A: The 5082-2800 operates to 200°C junction temperature. All Microchip and Infineon substitutes are rated to 150°C maximum. For applications requiring operation above 150°C, the original part specifications cannot be matched with available substitutes.

Q: Are all substitutes RoHS compliant?

A: No. The 1N5711, 1N5711-1, and 1N6858-1 are RoHS non-compliant, matching the original 5082-2800 status. Only the BAS170WE6327HTSA1 achieves ROHS3 compliance. For RoHS-mandated applications, the BAS170WE6327HTSA1 is the required selection.

Q: Which substitute offers the best thermal performance?

A: The 1N6858-1 and BAS170WE6327HTSA1 provide higher current ratings (75mA and 70mA respectively) compared to the original 15mA specification, offering improved thermal margin in power-dissipation-limited circuits. The 1N6858-1 also features lower forward voltage (650mV @ 15mA), reducing power loss.