2STA2120 Equivalent & Substitute Parts

Part Overview

The 2STA2120 is a PNP bipolar junction transistor manufactured by STMicroelectronics, rated for 250 V collector-emitter breakdown voltage and 17 A maximum collector current. This device is designed for high-power switching and amplification applications in Through Hole TO-3P packaging. The 2STA2120 is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics.

Key Parameters

Parameter	2STA2120 Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	250	V
Current - Collector (Ic) (Max)	17	A
Power - Max	200	W
Frequency - Transition	25	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V	—
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A	—
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2STA2120 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP (mandatory)
Voltage - Collector Emitter Breakdown (Max): 250 V (minimum requirement)
Current - Collector (Ic) (Max): 17 A (minimum requirement)
Mounting Type: Through Hole (mandatory)
Package / Case: TO-3P-3 or SC-65-3 (mandatory)

Secondary Compatibility Parameters:

Power - Max: 200 W or greater
Frequency - Transition: 25 MHz or greater
DC Current Gain (hFE): 80 or greater at specified conditions
Vce Saturation: 3 V or less at specified conditions
Operating Temperature: 150°C or greater

Substitute parts are classified into two categories:

Direct Equivalents: Parts meeting all primary criteria with electrical parameters equal to or exceeding the 2STA2120 specification.

Similar Substitutes: Parts meeting all primary criteria with minor deviations in secondary parameters that remain within acceptable operating ranges for most applications. These parts are suitable where the specific application does not require exact parameter matching.

Parameter Comparison

Parameter	2STA2120 (STMicroelectronics)	2SA1962OTU (onsemi)	2SA1962-O(Q) (Toshiba)	2SA1962RTU (Fairchild)	NJW0302G (onsemi)	NJW1302G (onsemi)
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	250 V	250 V	230 V	250 V	250 V	250 V
Current - Collector (Ic) (Max)	17 A	17 A	15 A	17 A	15 A	15 A
Power - Max	200 W	130 W	130 W	130 W	150 W	200 W
Frequency - Transition	25 MHz	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
DC Current Gain (hFE) (Min)	80 @ 1A, 5V	80 @ 1A, 5V	80 @ 1A, 5V	55 @ 1A, 5V	75 @ 3A, 5V	75 @ 3A, 5V
Vce Saturation (Max)	3V @ 800mA, 8A	3V @ 800mA, 8A	3V @ 800mA, 8A	3V @ 800mA, 8A	1V @ 500mA, 5A	600mV @ 800mA, 8A
Operating Temperature (TJ)	150°C	-55°C ~ 150°C	150°C	-55°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

Direct Equivalent Selection:

The 2SA1962RTU (Fairchild Semiconductor) provides the closest electrical match to the 2STA2120, maintaining 250 V breakdown voltage and 17 A collector current ratings. This part is classified as Active product status, ensuring continued availability. The 2SA1962RTU is ROHS3 compliant and suitable for applications requiring exact parameter matching. Note that DC Current Gain (hFE) is specified at 55 @ 1A, 5V, which is lower than the 2STA2120 specification of 80 @ 1A, 5V.

Alternative Equivalent Selection:

The 2SA1962OTU (onsemi) meets the 250 V and 17 A requirements with Active product status and ROHS3 compliance. Operating temperature range extends to -55°C, providing broader thermal operating capability. Power rating is 130 W, which is lower than the 2STA2120 specification of 200 W.

Similar Substitute Selection:

The NJW1302G (onsemi) provides 250 V breakdown voltage with 15 A collector current and 200 W power rating, matching the 2STA2120 power specification. This part is Active status with ROHS3 compliance and extended operating temperature range (-65°C ~ 150°C). Collector current is reduced to 15 A, requiring circuit evaluation for applications demanding the full 17 A specification.

The NJW0302G (onsemi) offers 250 V breakdown voltage with 15 A collector current and 150 W power rating. This part is Active status with ROHS3 compliance and extended operating temperature range. Selection is appropriate for applications where 15 A current capacity is sufficient.

The 2SA1962-O(Q) (Toshiba Semiconductor and Storage) is classified as Active product status with RoHS compliance. Breakdown voltage is reduced to 230 V and collector current to 15 A. This part is suitable for applications with reduced voltage and current requirements.

Compliance Considerations:

All recommended substitute parts maintain ROHS3 or RoHS compliance, ensuring regulatory alignment with the original 2STA2120 specification. All parts are classified as REACH Unaffected or maintain equivalent environmental compliance status.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1962RTU directly replace the 2STA2120 in all applications?

A: The 2SA1962RTU meets the primary electrical requirements of 250 V breakdown voltage and 17 A collector current. However, the DC Current Gain (hFE) is specified at 55 @ 1A, 5V compared to the 2STA2120 specification of 80 @ 1A, 5V. Applications sensitive to current gain characteristics require circuit evaluation to confirm acceptable performance.

Q: What is the difference between the NJW1302G and NJW0302G?

A: Both parts are PNP transistors in TO-3P-3 packaging with 250 V breakdown voltage. The NJW1302G provides 200 W power rating and 600mV Vce saturation, while the NJW0302G provides 150 W power rating and 1V Vce saturation. The NJW1302G is preferred for applications requiring higher power dissipation capability.

Q: Why is the 2SA1962-O(Q) listed as a similar substitute rather than a direct equivalent?

A: The 2SA1962-O(Q) has reduced electrical specifications: 230 V breakdown voltage (versus 250 V) and 15 A collector current (versus 17 A). While the part is Active status and suitable for many applications, it does not meet the full specification envelope of the 2STA2120 and is classified as a similar substitute for applications with reduced voltage and current requirements.

Q: Are all substitute parts available in the same packaging as the 2STA2120?

A: All recommended substitute parts are available in Through Hole TO-3P-3 or SC-65-3 packaging, matching the 2STA2120 mechanical specification. Verify specific supplier device package designation when ordering to confirm exact pin configuration compatibility.

Q: What is the significance of the extended operating temperature range in the 2SA1962RTU and NJW series parts?

A: The 2SA1962RTU, NJW0302G, and NJW1302G specify operating temperature ranges extending to -55°C or -65°C, compared to the 2STA2120 specification of 150°C maximum. Extended lower temperature capability provides design flexibility for applications operating in cold environments. Upper temperature limit remains at 150°C, matching the original specification.

Q: Can NJW21194G be used as a substitute for the 2STA2120?

A: The NJW21194G is an NPN transistor, while the 2STA2120 is a PNP transistor. These are complementary device types with opposite polarity characteristics and cannot be directly substituted without circuit redesign. The NJW21194G is listed in the original substitute list but is not functionally equivalent for PNP applications.

Q: How do I determine which substitute part is best for my specific application?

A: Selection depends on application requirements for collector current (17 A versus 15 A), power dissipation (200 W versus 130 W or 150 W), breakdown voltage (250 V versus 230 V), and current gain characteristics. Applications requiring the full 17 A and 200 W specification should prioritize the 2SA1962RTU or 2SA1962OTU. Applications with reduced current or power requirements can utilize the NJW series parts, which offer improved saturation characteristics and extended operating temperature range.

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