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2STA1695 Equivalent & Substitute Parts
Part Overview
The 2STA1695 is a PNP bipolar junction transistor manufactured by STMicroelectronics, rated for 140 V collector-emitter breakdown voltage and 10 A maximum collector current. This device is packaged in TO-3P and is designed for high-power switching and amplification applications requiring 100 W power dissipation capability. The 2STA1695 is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new designs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 10 | A |
| Voltage - Collector Emitter Breakdown (Max) | 140 | V |
| Power - Max | 100 | W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V | — |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-3P-3, SC-65-3 | — |
Substitute Part Grouping Explanation
Substitution of the 2STA1695 is determined by strict equivalence across the following critical parameters:
- Transistor Type: PNP configuration required for circuit polarity compatibility
- Current Rating (Ic Max): 10 A minimum to support specified load conditions
- Voltage Rating (Vce Breakdown): 140 V minimum to maintain voltage margin in application
- Power Dissipation (Pmax): 100 W minimum to handle thermal load
- DC Current Gain (hFE): 70 minimum at specified operating point for circuit gain requirements
- Operating Temperature: 150°C maximum junction temperature for thermal design compatibility
- Package Type: TO-3P through-hole configuration for mechanical and thermal interface compatibility
The FJA4210OTU from onsemi meets all critical parameter requirements and is classified as a direct substitute. Both devices share identical electrical ratings for collector current, breakdown voltage, power dissipation, current gain, and operating temperature. Both are RoHS3 compliant and REACH unaffected.
Parameter Comparison
| Parameter | 2STA1695 (STMicroelectronics) | FJA4210OTU (onsemi) | Unit |
|---|---|---|---|
| Transistor Type | PNP | PNP | — |
| Current - Collector (Ic) (Max) | 10 | 10 | A |
| Voltage - Collector Emitter Breakdown (Max) | 140 | 140 | V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 700mA, 7A | 500mV @ 500mA, 5A | — |
| Current - Collector Cutoff (Max) | 100nA | 10µA | — |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V | 70 @ 3A, 4V | — |
| Power - Max | 100 | 100 | W |
| Frequency - Transition | 20 | 30 | MHz |
| Operating Temperature (TJ) | 150 | 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
The FJA4210OTU is a direct functional equivalent to the 2STA1695 for applications requiring PNP transistor operation at 140 V, 10 A, and 100 W power dissipation. Both devices are obsolete and RoHS3 compliant, meeting current regulatory requirements for new designs and legacy system support.
The FJA4210OTU demonstrates superior performance characteristics in specific parameters: transition frequency is increased from 20 MHz to 30 MHz, and collector-emitter saturation voltage is reduced from 700 mV to 500 mV at comparable operating points. These improvements result in lower switching losses and faster transient response in high-frequency applications.
Both devices are mechanically and thermally compatible through identical TO-3P packaging. Electrical substitution is direct without circuit modification when core application requirements are limited to the specified current, voltage, and power ratings.
Frequently Asked Questions (FAQ)
Q: Can the FJA4210OTU directly replace the 2STA1695 in existing circuits?
A: Yes. The FJA4210OTU meets or exceeds all critical electrical parameters of the 2STA1695, including collector current (10 A), breakdown voltage (140 V), power dissipation (100 W), and DC current gain (70 minimum). Both devices use identical TO-3P packaging and are mechanically interchangeable.
Q: What are the differences between these two devices?
A: The primary differences are transition frequency (20 MHz vs. 30 MHz) and collector-emitter saturation voltage (700 mV vs. 500 mV). The FJA4210OTU exhibits faster switching characteristics and lower saturation voltage, resulting in reduced power loss during switching transitions.
Q: Are both devices compliant with current environmental regulations?
A: Yes. Both the 2STA1695 and FJA4210OTU are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and use.
Q: What is the significance of the TO-3P package for these transistors?
A: The TO-3P package is a through-hole, three-lead configuration designed for high-power applications. It provides direct thermal coupling to printed circuit board copper and heatsink mounting surfaces, enabling efficient heat dissipation for 100 W power operation. Both devices use this identical package, ensuring mechanical and thermal compatibility.
Q: Why is the 2STA1695 classified as obsolete?
A: Obsolete status indicates the device is no longer manufactured by STMicroelectronics and is not available through standard distribution channels. The FJA4210OTU from onsemi remains in production and provides equivalent functionality for new designs and legacy system support.
Q: Can circuit performance be affected by switching to the FJA4210OTU?
A: Circuit performance may improve due to the FJA4210OTU's higher transition frequency (30 MHz vs. 20 MHz) and lower saturation voltage (500 mV vs. 700 mV). These characteristics reduce switching losses and enable faster transient response. Applications sensitive to switching speed or power dissipation will benefit from these improvements.
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