Equivalent & Substitute Parts for 2SC4562GRL

Part Overview

The 2SC4562GRL is an RF transistor manufactured by Panasonic Electronic Components, classified as a bipolar NPN transistor designed for RF applications. The device operates at 50V collector-emitter breakdown voltage with a transition frequency of 250MHz and maximum power dissipation of 150mW in a surface mount SMini3-F2 package. The product status is obsolete, necessitating identification of equivalent and substitute parts for continued system design and maintenance applications.

Substiute Parts

2SC4562GRL
Panasonic Electronic ComponentsIn Stock: 9212SC4562GRL Datasheet
2SC4562GRL
Current Part
2SC2714-O(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 10582SC2714-O(TE85L,F) Datasheet
2SC2714-O(TE85L,F)
Similar
2SC4097T106Q
Rohm SemiconductorIn Stock: 902802SC4097T106Q Datasheet
2SC4097T106Q
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2SC4726TLP
Rohm SemiconductorIn Stock: 151012SC4726TLP Datasheet
2SC4726TLP
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MAPR-000912-500S00
MACOM Technology SolutionsIn Stock: 1006MAPR-000912-500S00 Datasheet
MAPR-000912-500S00
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Power - Max 150 mW
Current - Collector (Ic) (Max) 50 mA
DC Current Gain (hFE) (Min) 250 @ 2mA, 10V
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount -
Package / Case SC-85 (SMini3-F2) -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the 2SC4562GRL is determined by the following critical parameters: transistor type (NPN), voltage rating, frequency capability, power dissipation, collector current capacity, and mounting configuration. The substitute parts listed have been identified based on compatibility within these electrical and mechanical constraints.

The substitution logic follows these criteria:

  • Transistor Type: All substitutes must be NPN bipolar transistors
  • Voltage Rating: Substitute parts must support the application voltage requirements
  • Frequency Performance: Transition frequency must be adequate for the intended RF application
  • Power Dissipation: Maximum power rating must accommodate circuit requirements
  • Collector Current: Maximum collector current must meet or exceed application demands
  • Mounting Type: Surface mount configuration required for PCB compatibility
  • Package Compatibility: Physical dimensions and pin configuration must allow direct or adapter-based substitution

Parameter Comparison

Parameter 2SC4562GRL (Main) 2SC2714-O(TE85L,F) 2SC4097T106Q 2SC4726TLP MAPR-000912-500S00
Manufacturer Panasonic Toshiba Rohm Rohm MACOM
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 50V 30V 32V 11V 80V
Frequency - Transition 250MHz 550MHz 250MHz 3.2GHz -
Power - Max 150mW 100mW 200mW 150mW 500W
Current - Collector (Ic) (Max) 50mA 20mA 500mA 50mA 52.5A
DC Current Gain (hFE) (Min) 250 @ 2mA, 10V 70 @ 1mA, 6V 120 @ 10mA, 3V 56 @ 5mA, 10V -
Operating Temperature (TJ) 150°C 125°C 150°C 150°C 200°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Chassis Mount
Package / Case SC-85 (SMini3-F2) TO-236-3, SC-59, SOT-23-3 (S-Mini) SC-70, SOT-323 (UMT3) SC-75, SOT-416 (EMT3) -
Product Status Obsolete Active Active Active Active
RoHS Status - RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

2SC2714-O(TE85L,F) - Toshiba Semiconductor

This substitute operates at 30V maximum collector-emitter breakdown voltage, which is lower than the 2SC4562GRL. The transition frequency of 550MHz exceeds the original specification. Maximum collector current is 20mA, below the original 50mA rating. This part is suitable for applications where voltage and current requirements are reduced. The device is RoHS Compliant and carries Active product status with established supply chain availability.

2SC4097T106Q - Rohm Semiconductor

This substitute provides 32V collector-emitter breakdown voltage with 250MHz transition frequency matching the original specification. Maximum collector current of 500mA significantly exceeds the original 50mA rating, providing design margin. Power dissipation of 200mW exceeds the original 150mW specification. Operating temperature of 150°C matches the original device. The part is ROHS3 Compliant with Active product status and high inventory availability (90,200 pieces).

2SC4726TLP - Rohm Semiconductor

This substitute operates at 11V maximum collector-emitter breakdown voltage, substantially lower than the original 50V rating. Transition frequency of 3.2GHz significantly exceeds the original 250MHz specification. Maximum collector current of 50mA matches the original specification. Power dissipation of 150mW matches the original specification. Operating temperature of 150°C matches the original device. The part is ROHS3 Compliant with Active product status. This substitute is applicable only to applications with reduced voltage requirements.

MAPR-000912-500S00 - MACOM Technology Solutions

This substitute is a high-power RF transistor with 80V collector-emitter breakdown voltage and 52.5A maximum collector current. Power dissipation of 500W substantially exceeds the original 150mW specification. Mounting type is Chassis Mount, differing from the surface mount configuration of the original device. Operating temperature of 200°C exceeds the original specification. This part is suitable for high-power RF applications requiring different mounting and thermal characteristics. The device is ROHS3 Compliant with Active product status.

Frequently Asked Questions (FAQ)

Q: Can the 2SC2714-O(TE85L,F) directly replace the 2SC4562GRL in all applications?

A: No. The 2SC2714-O(TE85L,F) has a maximum collector-emitter breakdown voltage of 30V compared to the original 50V. Direct substitution is limited to applications operating at 30V or below. Maximum collector current is 20mA versus the original 50mA, further restricting applicability.

Q: What are the package compatibility considerations for the 2SC4097T106Q?

A: The 2SC4097T106Q uses SC-70/SOT-323 (UMT3) package, differing from the original SC-85 (SMini3-F2) package. Physical dimensions and pin spacing differ, requiring PCB layout modification or adapter solutions for direct substitution.

Q: Is the 2SC4726TLP suitable for 50V applications?

A: No. The 2SC4726TLP has a maximum collector-emitter breakdown voltage of 11V, making it unsuitable for applications requiring 50V operation. This part is restricted to low-voltage RF applications.

Q: What is the primary advantage of the 2SC4097T106Q as a substitute?

A: The 2SC4097T106Q provides the highest collector current capacity (500mA) among the listed substitutes, with matching transition frequency (250MHz) and operating temperature (150°C) to the original device. It carries ROHS3 Compliant certification and Active product status with substantial inventory availability.

Q: Can the MAPR-000912-500S00 be used in place of the 2SC4562GRL?

A: The MAPR-000912-500S00 is a high-power chassis-mount device fundamentally different in application class from the surface-mount 2SC4562GRL. Substitution is not applicable due to mounting type incompatibility and vastly different power and current ratings designed for different circuit topologies.

Q: What compliance certifications should be verified for substitute parts?

A: All listed substitute parts carry MSL 1 (Unlimited) moisture sensitivity rating matching the original device. The 2SC2714-O(TE85L,F) is RoHS Compliant. The 2SC4097T106Q, 2SC4726TLP, and MAPR-000912-500S00 are ROHS3 Compliant. Verify compliance requirements for your specific application and regulatory jurisdiction.

Q: Are all substitute parts currently in active production?

A: Yes. The 2SC2714-O(TE85L,F), 2SC4097T106Q, 2SC4726TLP, and MAPR-000912-500S00 all carry Active product status. The original 2SC4562GRL is Obsolete, confirming the necessity for substitute identification.

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