2SC4212H Equivalent & Substitute Parts

Part Overview

The 2SC4212H is an NPN bipolar junction transistor manufactured by Panasonic Electronic Components, designed for through-hole applications in the TO-126B-A1 package. This device is rated for 300 V collector-emitter breakdown voltage with a maximum collector current of 200 mA and 5 W power dissipation capability. The 2SC4212H is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and production continuity.

Substiute Parts

2SC4212H
Panasonic Electronic ComponentsIn Stock: 9522SC4212H Datasheet
2SC4212H
Current Part
KSC3503DSTU
onsemiIn Stock: 736KSC3503DSTU Datasheet
KSC3503DSTU
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 300 V
Current - Collector (Ic) (Max) 200 mA
Power - Max 5 W
Frequency - Transition 80 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 2 µA
Operating Temperature (Max) 150 °C
Mounting Type Through Hole
Package / Case TO-126-3

Substitute Part Grouping Explanation

Substitution of the 2SC4212H is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Voltage - Collector Emitter Breakdown rating must equal or exceed 300 V
  • Current - Collector (Ic) maximum rating must equal or exceed 200 mA
  • Power dissipation capability must equal or exceed 5 W
  • DC Current Gain (hFE) minimum must equal or exceed 40 @ 10mA, 10V
  • Vce Saturation must not exceed 1V @ 5mA, 50mA

Mechanical Compatibility Criteria:

  • Mounting type must be Through Hole
  • Package must be compatible with TO-126-3 footprint

The KSC3503DSTU meets these substitution criteria with equivalent or superior electrical ratings and compatible mechanical packaging.

Parameter Comparison

Parameter 2SC4212H (Panasonic) KSC3503DSTU (onsemi) Compatibility
Transistor Type NPN NPN Equivalent
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V Equivalent
Current - Collector (Ic) (Max) 200 mA 100 mA Substitute rated lower
Power - Max 5 W 7 W Substitute rated higher
Frequency - Transition 80 MHz 150 MHz Substitute rated higher
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 10V 40 @ 10mA, 10V Equivalent
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA 600mV @ 2mA, 20mA Substitute performs better
Current - Collector Cutoff (Max) 2 µA 100 nA Substitute performs better
Operating Temperature (Max) 150°C 150°C Equivalent
Mounting Type Through Hole Through Hole Equivalent
Package / Case TO-126-3 TO-126-3 Equivalent

Engineering Selection Recommendations

2SC4212H (Panasonic): This component is classified as obsolete and no longer in active production. While 902 pieces remain in current inventory, this part number should not be selected for new designs or long-term production planning.

KSC3503DSTU (onsemi): This substitute is classified as active product status with full production support. The device is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. The KSC3503DSTU is suitable for direct substitution in applications where the 2SC4212H was previously specified, provided that the maximum collector current requirement does not exceed 100 mA. For applications requiring the full 200 mA collector current capability of the original 2SC4212H, alternative substitutes must be evaluated.

Frequently Asked Questions (FAQ)

Q: Can the KSC3503DSTU directly replace the 2SC4212H in all applications?

A: The KSC3503DSTU is electrically compatible with the 2SC4212H for applications operating at collector currents of 100 mA or less. Applications requiring collector currents between 100 mA and 200 mA require circuit analysis to confirm operation within the substitute device's ratings.

Q: What is the primary difference between these two transistors?

A: The maximum collector current rating differs: the 2SC4212H is rated for 200 mA while the KSC3503DSTU is rated for 100 mA. Both devices share identical voltage breakdown ratings, DC current gain specifications, and operating temperature limits.

Q: Are the packages physically identical?

A: Both devices use the TO-126-3 through-hole package, ensuring mechanical compatibility and identical PCB footprints. No layout modifications are required for substitution.

Q: What compliance certifications apply to the substitute part?

A: The KSC3503DSTU is RoHS3 compliant and REACH unaffected. The original 2SC4212H does not list RoHS status in the provided specifications.

Q: Why does the KSC3503DSTU have lower collector current but higher power rating?

A: Power dissipation capability is determined by thermal characteristics and package design, not solely by current rating. The KSC3503DSTU achieves 7 W maximum power dissipation through superior thermal design despite the lower current specification.

Q: Is the KSC3503DSTU suitable for high-frequency applications?

A: The KSC3503DSTU operates at 150 MHz transition frequency, which exceeds the 2SC4212H specification of 80 MHz. This makes the substitute suitable for applications requiring higher frequency performance.

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