2SC2712-Y-TP Equivalent & Substitute Parts Reference

Part Overview

The 2SC2712-Y-TP, manufactured by Micro Commercial Co, is an NPN bipolar junction transistor (BJT) in the surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3). It supports a maximum collector current of 150 mA, a collector-emitter breakdown voltage of 50 V, a maximum power dissipation of 150 mW, and operates up to 80 MHz. The device is RoHS and REACH compliant, with an active product status. Identifying alternative models is necessary for procurement flexibility, ensuring supply chain continuity, and cross-manufacturer compatibility within applications using this BJT transistor.

Substiute Parts

2SC2712-Y-TP
Micro Commercial CoIn Stock: 11102SC2712-Y-TP Datasheet
2SC2712-Y-TP
Current Part
2SC2712-BL,LF
Toshiba Semiconductor and StorageIn Stock: 85002SC2712-BL,LF Datasheet
2SC2712-BL,LF
Direct
2SC2712-GR,LF
Toshiba Semiconductor and StorageIn Stock: 121432SC2712-GR,LF Datasheet
2SC2712-GR,LF
Direct
2SC2712-OTE85LF
Toshiba Semiconductor and StorageIn Stock: 244662SC2712-OTE85LF Datasheet
2SC2712-OTE85LF
Direct
2SC2712-Y,LF
Toshiba Semiconductor and StorageIn Stock: 88632SC2712-Y,LF Datasheet
2SC2712-Y,LF
Direct
2SC2412KT146Q
Rohm SemiconductorIn Stock: 10003862SC2412KT146Q Datasheet
2SC2412KT146Q
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2SD2226KT146W
Rohm SemiconductorIn Stock: 17152SD2226KT146W Datasheet
2SD2226KT146W
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BC847A RFG
Taiwan Semiconductor CorporationIn Stock: 9923BC847A RFG Datasheet
BC847A RFG
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BC847B RFG
Taiwan Semiconductor CorporationIn Stock: 20791BC847B RFG Datasheet
BC847B RFG
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BC847C RFG
Taiwan Semiconductor CorporationIn Stock: 9921BC847C RFG Datasheet
BC847C RFG
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MMBT3904 RFG
Taiwan Semiconductor CorporationIn Stock: 12490MMBT3904 RFG Datasheet
MMBT3904 RFG
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MMBT3904L RFG
Taiwan Semiconductor CorporationIn Stock: 194577MMBT3904L RFG Datasheet
MMBT3904L RFG
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MMBT6428LT1G
onsemiIn Stock: 23363MMBT6428LT1G Datasheet
MMBT6428LT1G
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MMST8098T146
Rohm SemiconductorIn Stock: 3203MMST8098T146 Datasheet
MMST8098T146
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TBC847B,LM
Toshiba Semiconductor and StorageIn Stock: 116035TBC847B,LM Datasheet
TBC847B,LM
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Key Parameters

Parameter Value
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 150 mA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V
Power - Max 150 mW
Frequency - Transition 80MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23

Substitute Part Grouping Explanation

Substitution is based strictly on the following key parameters: transistor polarity (NPN), collector-emitter breakdown voltage (minimum required 50 V), maximum collector current (minimum required 150 mA), Vce saturation, maximum collector cutoff current, minimum DC current gain at rated current and voltage, maximum power dissipation, transition frequency, case style, package equivalence, mounting type, and operational temperature range. Substitutes are listed if they match or exceed these criteria as provided.

Parameter Comparison

Part Number Manufacturer Transistor Type Vce (Max) Ic (Max) Vce(sat) (Max) Icbo (Max) hFE (Min) Pd (Max) Ft Operating Temp Mounting Package/Case Status
2SC2712-Y-TP Micro Commercial Co NPN 50 V 150 mA 250mV @ 10mA, 100mA 100nA 70 @ 2mA, 6V 150 mW 80MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
2SC2712-BL,LF Toshiba Semiconductor and Storage NPN 50 V 150 mA 250mV @ 10mA, 100mA 100nA 70 @ 2mA, 6V 150 mW 80MHz 125°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
2SC2712-GR,LF Toshiba Semiconductor and Storage NPN 50 V 150 mA 250mV @ 10mA, 100mA 100nA 70 @ 2mA, 6V 150 mW 80MHz 125°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
2SC2712-OTE85LF Toshiba Semiconductor and Storage NPN 50 V 150 mA 250mV @ 10mA, 100mA 100nA 70 @ 2mA, 6V 150 mW 80MHz 125°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
2SC2712-Y,LF Toshiba Semiconductor and Storage NPN 50 V 150 mA 250mV @ 10mA, 100mA 100nA 120 @ 2mA, 6V 150 mW 80MHz 125°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
2SC2412KT146Q Rohm Semiconductor NPN 50 V 150 mA 400mV @ 5mA, 50mA 100nA 120 @ 1mA, 6V 200 mW 180MHz 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
2SD2226KT146W Rohm Semiconductor NPN 50 V 150 mA 300mV @ 5mA, 50mA 300nA 1200 @ 1mA, 5V 200 mW 250MHz 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
BC847A RFG Taiwan Semiconductor NPN 45 V 100 mA 500mV @ 5mA, 100mA 100nA 110 @ 2mA, 5V 200 mW 100MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
BC847B RFG Taiwan Semiconductor NPN 45 V 100 mA 500mV @ 5mA, 100mA 100nA 200 @ 2mA, 5V 200 mW 100MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
BC847C RFG Taiwan Semiconductor NPN 45 V 100 mA 500mV @ 5mA, 100mA 100nA 420 @ 2mA, 5V 200 mW 100MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
MMBT3904 RFG Taiwan Semiconductor NPN 40 V 200 mA 300mV @ 5mA, 50mA 50nA 100 @ 10mA, 1V 300 mW 250MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
MMBT3904L RFG Taiwan Semiconductor NPN 40 V 200 mA 300mV @ 5mA, 50mA 50nA 100 @ 10mA, 1V 300 mW 250MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Obsolete
MMBT6428LT1G onsemi NPN 50 V 200 mA 600mV @ 5mA, 100mA 100nA 250 @ 100µA, 5V 225 mW 700MHz -55°C ~ 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active
MMST8098T146 Rohm Semiconductor NPN 60 V 200 mA 300mV @ 10mA, 100mA 100nA 100 @ 1mA, 5V 350 mW 350MHz - Surface Mount TO-236-3, SC-59, SOT-23-3 Not For New Designs
TBC847B,LM Toshiba Semiconductor and Storage NPN 50 V 150 mA 400mV @ 100mA, 5mA 30nA 200 @ 2mA, 5V 320 mW 100MHz 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 Active

Engineering Selection Recommendations

Selection of substitute parts for 2SC2712-Y-TP should be based on product status (preference for "Active" status), compliance with RoHS and REACH standards, and matching electrical and mechanical parameters as specified. Obsolete and not-for-new-designs statuses are indicated in the product table. All substitute parts listed declare compliance to RoHS3 and REACH where noted.

Frequently Asked Questions (FAQ)

Q1: What parameters must be matched when selecting a substitute for 2SC2712-Y-TP?
A1: Essential matching parameters include transistor type (NPN), maximum collector-emitter voltage, maximum collector current, Vce saturation, collector cutoff current, minimum DC gain, maximum power dissipation, transition frequency, operating temperature, mounting type, and package/case equivalence.

Q2: Why is package/case specification important for substitution?
A2: The SOT-23 (TO-236-3, SC-59, SOT-23-3) package determines the mechanical fit on PCBs and involves critical process compatibility for pick-and-place and reflow soldering.

Q3: How does compliance (RoHS, REACH) affect selection?
A3: Compliance with RoHS and REACH ensures the substitute part meets material standards for environmental and regulatory requirements.

Q4: Does product status affect substitution suitability?
A4: Active status indicates current manufacturer support and sustained availability. Obsolete or not-for-new-designs products are not preferred for future designs but may be considered for legacy support.

Q5: Can substitutes with higher maximum ratings be used?
A5: Parts with equal or higher voltage, current, power, or transition frequency ratings are included as substitutes according to explicit parameter input.

Q6: How should inventory status be considered?
A6: Inventory details are provided to facilitate procurement planning and are not a direct factor in electrical or mechanical substitution suitability.

Q7: Are all listed parts identical in electrical behavior?
A7: Only parameters explicitly provided are considered for equivalence. Additional manufacturer-specific behaviors are not evaluated.

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