2SC2712-GR-TP Equivalent & Substitute Parts

Part Overview

The 2SC2712-GR-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This transistor operates at a maximum collector current of 150 mA, collector-emitter breakdown voltage of 50 V, and maximum power dissipation of 150 mW. The device is packaged in SOT-23 (TO-236-3) surface mount format with an active product status and REACH unaffected compliance designation.

Equivalent and substitute parts are identified based on matching electrical characteristics including collector current rating, breakdown voltage, saturation voltage, power dissipation, and operating temperature range. Alternative part numbers may differ in packaging format, frequency response, or gain characteristics while maintaining functional compatibility within specified parameter tolerances.

Substiute Parts

2SC2712-GR-TP
Micro Commercial CoIn Stock: 9642SC2712-GR-TP Datasheet
2SC2712-GR-TP
Current Part
2SC2712-BL,LF
Toshiba Semiconductor and StorageIn Stock: 85002SC2712-BL,LF Datasheet
2SC2712-BL,LF
Direct
2SC2712-GR,LF
Toshiba Semiconductor and StorageIn Stock: 121432SC2712-GR,LF Datasheet
2SC2712-GR,LF
Direct
2SC2712-OTE85LF
Toshiba Semiconductor and StorageIn Stock: 244662SC2712-OTE85LF Datasheet
2SC2712-OTE85LF
Direct
2SD2226KT146W
Rohm SemiconductorIn Stock: 17152SD2226KT146W Datasheet
2SD2226KT146W
Similar
MMBT6428LT1G
onsemiIn Stock: 23363MMBT6428LT1G Datasheet
MMBT6428LT1G
Similar
TBC847B,LM
Toshiba Semiconductor and StorageIn Stock: 116035TBC847B,LM Datasheet
TBC847B,LM
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) 250 mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) Min 70 @ 2mA, 6V
Power - Max 150 mW
Frequency - Transition 80 MHz
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Substitute Part Grouping Explanation

Substitute parts for the 2SC2712-GR-TP are classified into two categories based on electrical parameter alignment:

Direct Substitutes maintain identical or equivalent electrical specifications across all critical parameters: collector current (150 mA), collector-emitter breakdown voltage (50 V), saturation voltage (250 mV @ 10mA, 100mA), DC current gain (70 @ 2mA, 6V), power dissipation (150 mW), and transition frequency (80 MHz). These parts are functionally interchangeable in circuit applications where the specified electrical characteristics are required.

Similar Substitutes share the same transistor type (NPN), voltage rating (50 V), and collector current rating (150 mA) but differ in one or more secondary parameters such as transition frequency, power dissipation, saturation voltage, or DC current gain. These parts are suitable for applications where the primary voltage and current requirements are met, but circuit performance may be affected by parameter variations.

The substitution logic is based strictly on the following key parameters:

  • Transistor Type (NPN)
  • Collector Current Rating (150 mA or higher)
  • Collector-Emitter Breakdown Voltage (50 V or higher)
  • Package compatibility (Surface Mount, TO-236-3 / SOT-23-3)
  • Operating temperature range coverage

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat mV hFE Min Power mW Freq MHz Temp °C Package Classification
2SC2712-GR-TP Micro Commercial Co 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 150 SOT-23 Main Part
2SC2712-BL,LF Toshiba Semiconductor and Storage 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 125 S-Mini Direct Substitute
2SC2712-GR,LF Toshiba Semiconductor and Storage 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 125 S-Mini Direct Substitute
2SC2712-OTE85LF Toshiba Semiconductor and Storage 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 125 TO-236 Direct Substitute
2SD2226KT146W Rohm Semiconductor 150 50 300 @ 5mA, 50mA 1200 @ 1mA, 5V 200 250 -55 to 150 SMT3 Similar Substitute
MMBT6428LT1G onsemi 200 50 600 @ 5mA, 100mA 250 @ 100µA, 5V 225 700 -55 to 150 SOT-23-3 Similar Substitute
TBC847B,LM Toshiba Semiconductor and Storage 150 50 400 @ 100mA, 5mA 200 @ 2mA, 5V 320 100 -55 to 150 SOT-23-3 Similar Substitute

Engineering Selection Recommendations

Direct Substitutes (2SC2712-BL,LF, 2SC2712-GR,LF, 2SC2712-OTE85LF):

These Toshiba Semiconductor and Storage variants maintain identical electrical specifications to the 2SC2712-GR-TP across all critical parameters. All three direct substitutes carry ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited) ratings. Selection among these direct substitutes is determined by packaging and supply requirements: 2SC2712-BL,LF is supplied in Tape & Reel format, 2SC2712-GR,LF in Cut Tape & Digi-Reel format, and 2SC2712-OTE85LF in Tape & Reel with TO-236 package designation. The operating temperature maximum is 125°C for all three direct substitutes compared to 150°C for the main part.

Similar Substitutes (2SD2226KT146W, MMBT6428LT1G, TBC847B,LM):

These parts share the core voltage and current ratings (50 V, 150 mA) but exhibit variations in secondary electrical characteristics. Selection depends on application-specific requirements:

  • 2SD2226KT146W (Rohm Semiconductor): Offers higher power dissipation (200 mW vs. 150 mW) and significantly higher transition frequency (250 MHz vs. 80 MHz). DC current gain is substantially elevated (1200 @ 1mA, 5V). Suitable for high-frequency applications requiring enhanced gain characteristics. Maintains full operating temperature range (-55°C to 150°C).

  • MMBT6428LT1G (onsemi): Provides the highest collector current rating (200 mA), highest power dissipation (225 mW), and highest transition frequency (700 MHz). DC current gain is moderate (250 @ 100µA, 5V). Saturation voltage is elevated (600 mV). Suitable for high-frequency, high-current applications. Maintains full operating temperature range (-55°C to 150°C).

  • TBC847B,LM (Toshiba Semiconductor and Storage): Maintains 150 mA collector current and 50 V breakdown voltage with moderate frequency response (100 MHz). Power dissipation is elevated (320 mW). DC current gain is higher (200 @ 2mA, 5V). Saturation voltage is higher (400 mV). Maintains full operating temperature range (-55°C to 150°C).

All substitute parts carry ROHS3 compliance and REACH unaffected or REACH compliance status. Selection should be based on circuit requirements for frequency response, gain, power dissipation, and saturation voltage characteristics.

Frequently Asked Questions (FAQ)

Q: Can 2SC2712-BL,LF be used as a direct replacement for 2SC2712-GR-TP?

A: Yes. The 2SC2712-BL,LF maintains identical electrical specifications including collector current (150 mA), breakdown voltage (50 V), saturation voltage (250 mV), DC current gain (70), power dissipation (150 mW), and transition frequency (80 MHz). The primary difference is packaging format (Tape & Reel vs. Bulk) and operating temperature maximum (125°C vs. 150°C). For applications operating below 125°C, this part is functionally equivalent.

Q: What is the difference between direct and similar substitutes?

A: Direct substitutes (2SC2712-BL,LF, 2SC2712-GR,LF, 2SC2712-OTE85LF) maintain all electrical specifications identical to the 2SC2712-GR-TP. Similar substitutes (2SD2226KT146W, MMBT6428LT1G, TBC847B,LM) share the same voltage and current ratings but differ in transition frequency, power dissipation, saturation voltage, or DC current gain. Direct substitutes are interchangeable without circuit modification. Similar substitutes require evaluation of whether parameter variations affect circuit performance.

Q: Can MMBT6428LT1G replace 2SC2712-GR-TP in all applications?

A: MMBT6428LT1G shares the 50 V breakdown voltage and 150 mA minimum collector current rating. However, it differs in several parameters: higher collector current capability (200 mA), higher power dissipation (225 mW), significantly higher transition frequency (700 MHz), and higher saturation voltage (600 mV @ 5mA, 100mA). Substitution is suitable for applications where these parameter variations do not degrade circuit performance. High-frequency applications benefit from the 700 MHz transition frequency.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed carry ROHS3 compliance designation. The main part 2SC2712-GR-TP does not specify RoHS status in the provided data. All substitute parts are suitable for applications requiring RoHS compliance.

Q: What is the significance of operating temperature range differences?

A: The 2SC2712-GR-TP operates from -55°C to 150°C. Direct substitutes 2SC2712-BL,LF, 2SC2712-GR,LF, and 2SC2712-OTE85LF operate from -55°C to 125°C. For applications requiring operation above 125°C, these direct substitutes are not suitable. Similar substitutes 2SD2226KT146W, MMBT6428LT1G, and TBC847B,LM maintain the full -55°C to 150°C range.

Q: How do package differences affect substitution?

A: All parts are surface mount devices in TO-236-3 / SOT-23-3 compatible packages. The 2SC2712-GR-TP uses SOT-23 packaging. Direct substitutes use S-Mini or TO-236 package designations. MMBT6428LT1G and TBC847B,LM use SOT-23-3 designation. 2SD2226KT146W uses SMT3 designation. These package variants are mechanically and electrically compatible with standard SOT-23-3 footprints. Verify PCB footprint compatibility before substitution.

Q: What is Moisture Sensitivity Level (MSL) and why does it matter?

A: MSL indicates the maximum time a component can be exposed to ambient conditions before soldering. All substitute parts carry MSL 1 (Unlimited), meaning they can be stored indefinitely without special moisture control. This simplifies inventory management and reduces component handling requirements compared to higher MSL ratings.

Q: Which substitute part offers the best high-frequency performance?

A: MMBT6428LT1G provides the highest transition frequency at 700 MHz, compared to 80 MHz for the 2SC2712-GR-TP. This part is suitable for applications requiring high-frequency signal amplification or switching. The elevated saturation voltage (600 mV) and higher collector current capability (200 mA) should be evaluated for circuit compatibility.

Request Quote (Ships tomorrow)