2SC2383P-O-TP Equivalent & Substitute Parts

Part Overview

The 2SC2383P-O-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications requiring moderate voltage and current handling capabilities. This surface mount device operates at collector currents up to 1 A with a collector-emitter breakdown voltage of 160 V and maximum power dissipation of 500 mW. The part is classified as Active product status with full REACH compliance and EAR99 export classification. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity when the primary part becomes unavailable or when design requirements permit alternative specifications within acceptable electrical and mechanical parameters.

Substiute Parts

2SC2383P-O-TP

Micro Commercial CoIn Stock: 7232SC2383P-O-TP Datasheet

Current PartRFQ

PBHV8115X,115

NXP USA Inc.In Stock: 10201PBHV8115X,115 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC2383P-O-TP is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor type must be NPN
• Collector current rating must be equal to or greater than 1 A
• Collector-emitter breakdown voltage must be equal to or greater than 160 V
• Mounting type must be Surface Mount
• Package classification must be TO-243AA / SOT-89 compatible
• Operating temperature range must encompass the application requirements

Secondary Compatibility Factors:

• Power dissipation capability
• Transition frequency
• DC current gain (hFE)
• Saturation voltage characteristics

The PBHV8115X,115 from NXP USA Inc. meets the primary substitution criteria with equivalent collector current (1 A), compatible package format (SOT-89), and surface mount configuration. While the collector-emitter breakdown voltage is 150 V (10 V lower than the main part), this remains within acceptable substitution parameters for applications not requiring the full 160 V rating. Enhanced power dissipation (1.5 W versus 500 mW) and higher transition frequency (30 MHz versus 20 MHz) provide additional design margin.

Parameter Comparison

Engineering Selection Recommendations

2SC2383P-O-TP Selection Criteria: Select the 2SC2383P-O-TP when applications require the full 160 V collector-emitter breakdown voltage specification. This part maintains Active product status with established supply availability (684 pcs in stock) and is suitable for designs with voltage margins requiring the higher breakdown rating. REACH compliance and EAR99 classification support standard procurement and export requirements.

PBHV8115X,115 Selection Criteria: The PBHV8115X,115 serves as a direct substitute for applications where the 150 V collector-emitter breakdown voltage is acceptable. This NXP part offers superior power dissipation capability (1.5 W versus 500 mW) and higher transition frequency (30 MHz versus 20 MHz), providing enhanced thermal performance and frequency response. Active product status and identical ECCN classification ensure regulatory compliance. Higher inventory availability (10,122 pcs in stock) supports rapid procurement. The TO-243AA / SOT-89 package format ensures mechanical and thermal compatibility with existing PCB layouts designed for the 2SC2383P-O-TP.

Substitution Feasibility: Both parts are electrically and mechanically compatible for applications operating within the 150 V collector-emitter breakdown specification. Pin-for-pin compatibility and identical package geometry permit direct board-level substitution without layout modification. Selection between these parts depends solely on voltage rating requirements and thermal design margins specific to the application.

Frequently Asked Questions (FAQ)

Q: Can the PBHV8115X,115 replace the 2SC2383P-O-TP in all applications?

A: The PBHV8115X,115 is a direct substitute for applications where the collector-emitter breakdown voltage requirement does not exceed 150 V. If the design requires the full 160 V rating, the 2SC2383P-O-TP must be used. Both parts share identical NPN transistor type, 1 A collector current rating, TO-243AA package, and SOT-89 supplier package format.

Q: Are there pin-for-pin compatibility concerns between these parts?

A: No. Both the 2SC2383P-O-TP and PBHV8115X,115 use the TO-243AA / SOT-89 package with identical pin configuration. Direct board-level substitution is possible without PCB modification.

Q: What is the primary difference between these two transistors?

A: The primary electrical difference is the collector-emitter breakdown voltage: 160 V for the 2SC2383P-O-TP versus 150 V for the PBHV8115X,115. Secondary differences include power dissipation (500 mW versus 1.5 W) and transition frequency (20 MHz versus 30 MHz). Both are NPN transistors with 1 A maximum collector current and surface mount configuration.

Q: Does the higher power rating of the PBHV8115X,115 affect thermal design?

A: The PBHV8115X,115 provides 3× greater power dissipation capability (1.5 W versus 500 mW). This allows operation at higher power levels or improved thermal margin in existing designs. Thermal design considerations remain application-specific and depend on PCB layout, ambient temperature, and heat dissipation requirements.

Q: Are both parts subject to the same export and compliance requirements?

A: Yes. Both the 2SC2383P-O-TP and PBHV8115X,115 carry EAR99 ECCN classification and are REACH compliant. No additional compliance documentation is required for substitution.

Q: What inventory considerations apply to these parts?

A: The 2SC2383P-O-TP has 684 pcs in stock, while the PBHV8115X,115 has 10,122 pcs in stock. The PBHV8115X,115 offers significantly higher availability for rapid procurement and supply chain continuity.