2SB1707TL Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor 2SB1707TL is a PNP Bipolar (BJT) transistor with a maximum collector current of 4 A and voltage rating of 12 V, optimized for surface mount applications. It features high DC current gain (hFE), low Vce(sat), and a maximum power dissipation of 500 mW, provided in the TSMT3 package.
Finding alternative or substitute part numbers within the Transistors, Bipolar (BJT) category is often necessary for inventory risk mitigation, cost management, or supply chain optimization, especially when the base product is in high demand or if footprint, compliance, or lifecycle requirements dictate interchangeability.

Key Parameters

Parameter	Value
Manufacturer Part Number	2SB1707TL
Manufacturer	Rohm Semiconductor
Category	Transistors, Bipolar (BJT)
Transistor Type	PNP
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	12 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 40mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	270 @ 200mA, 2V
Power - Max	500 mW
Frequency - Transition	250MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-96
Supplier Device Package	TSMT3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
Product Status	Active

Substitute Part Grouping Explanation

Substitution is determined strictly by matching or exceeding requirements for collector current (Ic), voltage rating (Vce), package compatibility, device polarity (PNP/NPN), mounting type, power rating, DC current gain (hFE), and component compliance (RoHS, REACH).
All listed substitutes retain Bipolar (BJT) transistor classification, are suited to surface mount assembly, and have relevant electrical ratings and compliance attributes as listed. Substitute parts may differ in polarity, maximum ratings, or packaging as specified in the parameters.

Key parameters considered:

Transistor Type (PNP/NPN)
Collector Current (Ic)
Collector-Emitter Voltage (Vce)
Power Dissipation (Pmax)
Transition Frequency (ft)
Package / Device Case and Mounting
Environmental Status (RoHS/REACH/MSL)
DC Current Gain (hFE)
Vce(sat)

Parameter Comparison

Parameter	2SB1707TL	2SB1690KT146	FMMT617TA	PBSS5320T,215	ZXTN25012EFLTA
Transistor Type	PNP	PNP	NPN	PNP	NPN
Current - Collector (Ic) (Max)	4 A	2 A	3 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	12 V	12 V	15 V	20 V	12 V
Vce Saturation (Max)	250mV @ 40mA, 2A	180mV @ 50mA, 1A	200mV @ 50mA, 3A	300mV @ 300mA, 3A	300mV @ 100mA, 5A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA	100nA (ICBO)	50nA (ICBO)
DC Current Gain (hFE) (Min)	270 @ 200mA, 2V	270 @ 200mA, 2V	300 @ 200mA, 2V	200 @ 1A, 2V	500 @ 10mA, 2V
Power - Max	500 mW	200 mW	625 mW	540 mW	350 mW
Frequency - Transition	250MHz	360MHz	120MHz	100MHz	260MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SC-96	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TSMT3	SMT3	SOT-23-3	TO-236AB	SOT-23-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed, including 2SB1690KT146, FMMT617TA, PBSS5320T,215, and ZXTN25012EFLTA, are classified as active, RoHS3 compliant, and REACH unaffected. All options have Moisture Sensitivity Level 1 (Unlimited), providing compatibility regarding manufacturing and regulatory status. Selection should reference specific transistor type (PNP/NPN), packaging, and power requirements solely based on application design and the above-provided parameters.

Frequently Asked Questions (FAQ)

Q1: Which parameters are critical for substituting the 2SB1707TL in bipolar transistor applications?
Critical parameters include transistor type (PNP/NPN), collector current (Ic), collector-emitter breakdown voltage (Vce), package compatibility, power dissipation, DC current gain (hFE), and compliance status.

Q2: Are alternative package types interchangeable for the 2SB1707TL?
Package interchangeability depends on footprint compatibility. The 2SB1707TL uses the TSMT3 package (SC-96). Verify that the suggested substitute's package (e.g., SOT-23-3, TO-236-3) matches the PCB footprint used.

Q3: Can NPN transistors be considered equivalent for the PNP 2SB1707TL?
NPN devices are functionally different from PNP transistors. Only PNP devices share direct electrical equivalence. Substitute selection should prioritize transistor type per circuit requirements.

Q4: What compliance attributes are supported by these substitute parts?
All substitutes are RoHS3 compliant, REACH unaffected, and MSL 1 rated, matching the environmental and manufacturing requirements of the 2SB1707TL.

Q5: How is substitute suitability determined among the listed cross-reference parts?
Suitability is determined exclusively by electrical, mechanical, and environmental parameters provided in the comparison table above. Device selection must not infer or extrapolate beyond the explicitly stated attributes.

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