2SA562-O-AP Equivalent & Substitute Parts

Part Overview

The 2SA562-O-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 30 V, and a maximum power dissipation of 500 mW in a Through Hole TO-92 package.

The 2SA562-O-AP is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for legacy systems utilizing this component.

Substiute Parts

2SA562-O-AP
Micro Commercial CoIn Stock: 10172SA562-O-AP Datasheet
2SA562-O-AP
Current Part
2N4403TA
onsemiIn Stock: 601242N4403TA Datasheet
2N4403TA
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 250 mV @ 10 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100 mA, 1 V
Power - Max 500 mW
Frequency - Transition 200 MHz
Operating Temperature (Max) 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-92-3 (TO-226AA)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SA562-O-AP is determined by strict electrical and mechanical compatibility within the PNP bipolar junction transistor category. The following parameters establish the substitution criteria:

Mandatory Compatibility Parameters:

  • Transistor Type: PNP (functional equivalence)
  • Package / Case: TO-92-3 (mechanical and pin compatibility)
  • Mounting Type: Through Hole (assembly compatibility)
  • Frequency - Transition: 200 MHz (switching performance equivalence)

Allowable Parameter Ranges for Substitution:

  • Current - Collector (Ic) (Max): Equal to or greater than 500 mA
  • Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 30 V
  • Power - Max: Equal to or greater than 500 mW
  • DC Current Gain (hFE) (Min): Equal to or greater than 70
  • Operating Temperature (Max): Equal to or greater than 150°C

The 2N4403TA meets all mandatory compatibility parameters and exceeds the allowable electrical performance ranges, qualifying it as a direct substitute for the 2SA562-O-AP.

Parameter Comparison

Parameter 2SA562-O-AP 2N4403TA Compatibility
Transistor Type PNP PNP Match
Current - Collector (Ic) (Max) 500 mA 600 mA Substitute exceeds requirement
Voltage - Collector Emitter Breakdown (Max) 30 V 40 V Substitute exceeds requirement
Vce Saturation (Max) @ Ib, Ic 250 mV @ 10 mA, 100 mA 750 mV @ 50 mA, 500 mA Different test conditions
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100 mA, 1 V 100 @ 150 mA, 2 V Substitute exceeds requirement
Power - Max 500 mW 625 mW Substitute exceeds requirement
Frequency - Transition 200 MHz 200 MHz Match
Operating Temperature (Max) 150°C (TJ) 150°C (TJ) Match
Mounting Type Through Hole Through Hole Match
Package / Case TO-92-3 (TO-226AA) TO-92-3 (TO-226AA) Match
RoHS Status ROHS3 Compliant ROHS3 Compliant Match

Engineering Selection Recommendations

The 2N4403TA manufactured by onsemi is a qualified substitute for the obsolete 2SA562-O-AP. Selection of this substitute is supported by the following factors:

Product Status: The 2N4403TA is classified as an Active product with established supply chain availability (60,100 pcs in stock), whereas the 2SA562-O-AP is obsolete. Transition to the 2N4403TA ensures long-term component availability and production continuity.

Regulatory Compliance: Both the 2SA562-O-AP and 2N4403TA are ROHS3 compliant, meeting environmental and regulatory requirements for electronic component manufacturing and distribution.

Electrical Performance: The 2N4403TA provides equal or superior electrical characteristics across all critical parameters: collector current (600 mA vs. 500 mA), breakdown voltage (40 V vs. 30 V), power dissipation (625 mW vs. 500 mW), and current gain (100 vs. 70). These enhanced specifications ensure functional compatibility and design margin in existing applications.

Package and Mechanical Compatibility: Both devices utilize identical TO-92-3 (TO-226AA) Through Hole packaging with formed leads, ensuring direct mechanical and electrical pin compatibility without circuit board modification.

Frequency Performance: Both devices maintain identical transition frequency specifications (200 MHz), preserving switching performance characteristics in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the 2N4403TA be used as a direct replacement for the 2SA562-O-AP without circuit modifications?

A: Yes. The 2N4403TA is mechanically and electrically compatible with the 2SA562-O-AP. Both devices share identical TO-92-3 package geometry, pin configuration, and transition frequency. The 2N4403TA provides equal or superior electrical performance across all specified parameters, allowing direct substitution in existing circuit designs.

Q: What are the key differences between the 2SA562-O-AP and 2N4403TA?

A: The primary differences are product status and electrical performance margins. The 2SA562-O-AP is obsolete; the 2N4403TA is active. The 2N4403TA exceeds the 2SA562-O-AP specifications in collector current (600 mA vs. 500 mA), breakdown voltage (40 V vs. 30 V), power dissipation (625 mW vs. 500 mW), and current gain (100 vs. 70). Operating temperature maximum is identical at 150°C.

Q: Are there any thermal or power dissipation concerns when substituting the 2N4403TA for the 2SA562-O-AP?

A: No. The 2N4403TA has a higher maximum power dissipation rating (625 mW vs. 500 mW) and identical maximum operating temperature (150°C). In applications where the 2SA562-O-AP operated within its thermal limits, the 2N4403TA will operate with additional thermal margin.

Q: Do both devices meet the same regulatory and environmental standards?

A: Yes. Both the 2SA562-O-AP and 2N4403TA are ROHS3 compliant. The 2SA562-O-AP has Moisture Sensitivity Level 1 (Unlimited); the 2N4403TA is classified as Not Applicable for MSL. Both devices carry identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications.

Q: What is the impact of different Vce saturation specifications between these devices?

A: The Vce saturation specifications are measured under different test conditions. The 2SA562-O-AP specifies 250 mV at 10 mA base current and 100 mA collector current; the 2N4403TA specifies 750 mV at 50 mA base current and 500 mA collector current. These different test points reflect different operating regions and do not indicate incompatibility. Both devices are suitable for switching applications where saturation voltage is a design consideration.

Q: Is the 2N4403TA available in the same packaging options as the 2SA562-O-AP?

A: Both devices are supplied in TO-92-3 (TO-226AA) Through Hole packages with formed leads. The 2N4403TA is available in Cut Tape (CT) packaging format, whereas the 2SA562-O-AP packaging format is not specified in the provided data. Both are compatible with standard Through Hole assembly processes.

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